US4954856A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor photoelectric conversion device and method of making the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1989-04-10
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Granted: 1990-09-04
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Expires: 2009-04-10
Abstract
Abstract A photosensitive device including a laminate member incorporating a PIN junction where at least the portions of the I layer adjacent the P and N layers are crystallized and the P and N layers are non-single-crystalline where the degree of crystallization of the portions of the I layer is greater than that of the P and N layers. At least one of the P and N layers is made of silicon carbide and the I layer is photoannealed and contains one atom % or less oxygen. In one embodiment, the device is a tandem device including first and second photoelectric conversion devices where the second device is formed on the first device and where the first device has the same characteristics as the above described laminate member.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:03
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00; H10F71/128; H10F77/00; H10F77/20; H10F77/244; H10F77/247; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/004; Y10S148/154; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
110 words
A tandem photoelectric conversion device comprising: a first photoelectric conversion device incorporating a PIN junction where at least the portions of the I layer adjacent the P and N layers are crystallized where the degree of said crystallization of said portions of the I layer is greater than that of the P and N layers; a second photoelectric conversion device directly formed on said first device; at least one of the P-type semiconductor layer and the N-type semiconductor layer which constitute a PN junction between said first and second device being made of silicon carbide; and where said I layer is photoannealed and contains one atom % or less oxygen.
Claim 2
Dependent Claim
110 words
A tandem photoelectric conversion device comprising: a first photoelectric conversion device incorporating a PIN junction where at least the portions of the I layer adjacent the P and N layers are crystallized where the degree of said crystallization of said portions of the I layer is greater than that of the P and N layers; a second photoelectric conversion device directly formed on said first device; at least one of the P-type semiconductor layer and the N-type semiconductor layer which constitute a PN junction between said first and second device being made of silicon carbide; and where said I layer is photoannealed and contains one atom % or less oxygen.
Claim 3
Dependent Claim
18 words
The device of claim 1 wherein the semiconductor layer made of silicon carbide is a P-type semiconductor layer.
Claim 4
Dependent Claim
88 words
A photosensitive device comprising; a laminate member incorporating a PIN junction where at least the portions of the I layer adjacent the P and N layers are crystallized and the P and N layers are non-single-crystalline where the degree of said crystallization of said portions of the I layer is greater than that of the P and N layers; at least one of said P and N layers being made of silicon carbide; and where said I layer is photoannealed and contains one atom % or less oxygen.
Claim 5
Dependent Claim
88 words
A photosensitive device comprising; a laminate member incorporating a PIN junction where at least the portions of the I layer adjacent the P and N layers are crystallized and the P and N layers are non-single-crystalline where the degree of said crystallization of said portions of the I layer is greater than that of the P and N layers; at least one of said P and N layers being made of silicon carbide; and where said I layer is photoannealed and contains one atom % or less oxygen.
Claim 6
Dependent Claim
17 words
The device of claim 3 where said semiconductor layer made of silicon carbide is the P layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-03 | 1994-03-05 | 1994-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-03 | 1998-03-05 | 1998-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-03 | 2002-03-05 | 2002-09-04 | $7700.00 | Window Closed / Lapsed |