US4951101A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diamond shorting contact for semiconductors
Assignee: Microchip Technology Inc
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Filing: 1988-08-25
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Granted: 1990-08-21
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Expires: 2008-08-25
Abstract
Abstract A diamond-shaped short contact overlapping two differing conductivity regions in a semiconductor. The shape and orientation providing maximum alignment tolerances for a given size of contact opening.
Inventors
- 👤 Martin J. Alter
- 👤 Clyde M. Brown, Jr.
- 👤 James B. Compton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D64/00; H10D64/20; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
73 words
In a semiconductor element having substantially square first conductivity type region formed within a second conductivity type region, a shorting contact opening comprising: a substantially square contact opening overlapping at least a portion of each of said first and second conductivity type regions, but not completely overlapping said second conductivity type region, wherein sides of said first conductivity type region are at substantially 45° angles with respect to sides of said contact opening.
Claim 2
Dependent Claim
73 words
In a semiconductor element having substantially square first conductivity type region formed within a second conductivity type region, a shorting contact opening comprising: a substantially square contact opening overlapping at least a portion of each of said first and second conductivity type regions, but not completely overlapping said second conductivity type region, wherein sides of said first conductivity type region are at substantially 45° angles with respect to sides of said contact opening.
Claim 3
Dependent Claim
116 words
A shorting contact formed on a semiconductor substrate for shorting a substantially square first conductivity type region to a second conductivity type region, said first conductivity type region being formed within said second conductivity type region, said shorting contact comprising: a conductive material filling a contact opening to electrically short said first conductivity type region to said second conductivity type region, said contact opening being substantially square and overlapping at least a portion of said first conductivity type region and a portion of said second conductivity type region, but not completely overlapping said second conductivity type region, said first conductivity type region having sides which are at substantially 45° angles to sides of said contact opening.
Claim 4
Dependent Claim
116 words
A shorting contact formed on a semiconductor substrate for shorting a substantially square first conductivity type region to a second conductivity type region, said first conductivity type region being formed within said second conductivity type region, said shorting contact comprising: a conductive material filling a contact opening to electrically short said first conductivity type region to said second conductivity type region, said contact opening being substantially square and overlapping at least a portion of said first conductivity type region and a portion of said second conductivity type region, but not completely overlapping said second conductivity type region, said first conductivity type region having sides which are at substantially 45° angles to sides of said contact opening.
Claim 5
Dependent Claim
21 words
The shorting contact of claim 2 wherein said contact opening is in the range of a 4 to 8 microns square.
Claim 6
Dependent Claim
68 words
The shorting contact of claim 2, wherein said second conductivity type region is formed to have a rectilinear shape, and wherein said substantially square contact opening has sides which are substantially parallel and perpendicular to sides of said second conductivity type region, and wherein said substantially square first conductivity type region has sides which are at substantially 45° angles with said sides of said second conductivity type region.
Claim 7
Dependent Claim
137 words
A semiconductor element and shorting contact structure comprising: first and second conductivity type regions abutting each other along a border, said first conductivity type region having one or more V-shaped portions, each of said V-shaped portions forming a section of said border, remaining portions of said border not being formed of said one or more V-shaped portions being substantially linear; a separate contact opening positioned over each of said one or more V-shaped portions, said contact opening positioned so as to overlap a portion of said first conductivity type region and a portion of said second conductivity type region, but not so as to completely overlap either of said first or second conductivity type regions, and a conductive material filling said contact opening to electrically short said first conductivity type region to said second conductivity type region.
Claim 8
Dependent Claim
137 words
A semiconductor element and shorting contact structure comprising: first and second conductivity type regions abutting each other along a border, said first conductivity type region having one or more V-shaped portions, each of said V-shaped portions forming a section of said border, remaining portions of said border not being formed of said one or more V-shaped portions being substantially linear; a separate contact opening positioned over each of said one or more V-shaped portions, said contact opening positioned so as to overlap a portion of said first conductivity type region and a portion of said second conductivity type region, but not so as to completely overlap either of said first or second conductivity type regions, and a conductive material filling said contact opening to electrically short said first conductivity type region to said second conductivity type region.
Claim 9
Dependent Claim
16 words
The semiconductor element and shorting contact structure of claim 5, wherein said contact opening is rectilinear.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-20 | 1994-02-19 | 1994-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-20 | 1998-02-19 | 1998-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-20 | 2002-02-19 | 2002-08-21 | $7700.00 | Window Closed / Lapsed |