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US4949351A
Expired / Lapsed
US
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Surface-emitting semiconductor laser and manufacturing method of same
Assignee: Omron Corp
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Filing: 1989-04-12
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Granted: 1990-08-14
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Expires: 2009-04-12
Abstract
Abstract A surface-emitting semiconductor laser having a lower reflection mirror including a semiconductor multilayer disposed on an n-type substrate so as to form an upper reflection mirror with TiPtAu such that a double heterojunction between the lower and upper reflection mirrors is configured in a columnar shape and that an insulating material is buried in a periphery of the double heterojunction. The non-alloyed metal of TiPtAu serves three functions of an ohmic metal, a reflective layer, and an etching mask.
Inventors
- 👤 Koichi Imanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:33
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H01S5/18375; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H01S5/04253; H01S2301/00; H01S2301/17; H01S2301/176; H01S5/18344; H01S5/18347
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
138 words
A surface-emitting semiconductor laser comprising: a first electrode; an n-type semiconductor substrate disposed on said first electrode; a lower reflection mirror including a semiconductor multilayer supported on said substrate; an upper reflection mirror formed of TiPtAu, said upper reflection mirror comprising a second electrode; a double heterojunction disposed between said lower reflection mirror and said upper reflection mirror, said double heterojunction comprising a first clad layer adjacent said upper reflection mirror, a second clad layer adjacent said lower reflection mirror and an active layer disposed between said first clad layer and said second clad layer; and an insulating material disposed around a periphery of said double heterojunction so as to surround said double heterojunction, whereby said laser emits light in an upward direction away from a side of said first clad layer directed away from said first electrode.
Claim 2
Dependent Claim
138 words
A surface-emitting semiconductor laser comprising: a first electrode; an n-type semiconductor substrate disposed on said first electrode; a lower reflection mirror including a semiconductor multilayer supported on said substrate; an upper reflection mirror formed of TiPtAu, said upper reflection mirror comprising a second electrode; a double heterojunction disposed between said lower reflection mirror and said upper reflection mirror, said double heterojunction comprising a first clad layer adjacent said upper reflection mirror, a second clad layer adjacent said lower reflection mirror and an active layer disposed between said first clad layer and said second clad layer; and an insulating material disposed around a periphery of said double heterojunction so as to surround said double heterojunction, whereby said laser emits light in an upward direction away from a side of said first clad layer directed away from said first electrode.
Claim 3
Dependent Claim
24 words
A semiconductor laser according to claim 1 wherein said insulating material has a refractive index smaller than a refractive index of said double heterojunction.
Claim 4
Independent Claim
127 words
A method of manufacturing a surface-emitting semiconductor laser comprising the steps of: providing a first electrode; providing an n-type substrate disposed on said first electrode; forming a lower reflection mirror including a semiconductor multilayer on said n-type substrate; fabricating an upper reflection mirror formed of TiPtAu, said upper reflection mirror also constituting a second electrode; forming a double heterojunction between said lower and upper reflection mirrors in a columnar shape, said double heterojunction comprising a first clad layer adjacent said upper reflection mirror, a second clad layer adjacent said lower reflection mirror and an active layer disposed between said first clad layer and said second layer; and providing an insulating material around a periphery of said double heterojunction to bury said double heterojunction in said insulating material.
Claim 5
Independent Claim
127 words
A method of manufacturing a surface-emitting semiconductor laser comprising the steps of: providing a first electrode; providing an n-type substrate disposed on said first electrode; forming a lower reflection mirror including a semiconductor multilayer on said n-type substrate; fabricating an upper reflection mirror formed of TiPtAu, said upper reflection mirror also constituting a second electrode; forming a double heterojunction between said lower and upper reflection mirrors in a columnar shape, said double heterojunction comprising a first clad layer adjacent said upper reflection mirror, a second clad layer adjacent said lower reflection mirror and an active layer disposed between said first clad layer and said second layer; and providing an insulating material around a periphery of said double heterojunction to bury said double heterojunction in said insulating material.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-13 | 2002-02-12 | 2002-08-14 | $7700.00 | Window Closed / Lapsed |