Patent US4949065A successfully refreshed from Google Patents.
US4949065A
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US
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Resistor composition, resistor produced therefrom, and method of producing resistor
Assignee: Panasonic Holdings Corp
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Filing: 1988-09-20
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Granted: 1990-08-14
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Expires: 2008-09-20
Abstract
Abstract A resistor composition containing no boride powder is obtained by mechanical grinding of at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxide; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide, which are capable of being reduced with silicon, silicon monoxide or higher oxidation state precursor of silicon monoxide. In a sintering step in a non-oxidizing atmosphere, boron oxide and at least one another oxide contained in the borosilicate glass are reduced by silicon, silicon monoxide, higher oxidation state precursor of silicon monoxide or silicide, and metal elements of the oxides contained in the glass combine with each other, so that fine particles of boride are precipitated around glass particles to form a graze resistor.
Inventors
- 👤 Hirotoshi Watanabe
- 👤 Toru Ishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:55
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/003; H01C17/00; H01C17/06; H01C17/065; H01C17/06506; H01C17/06513; H01C17/06566
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
48 words
A resistor composition which comprises: at least one of silicon, silicon monoxide, and higher oxidation state precursor of silicon monoxide; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide.
Claim 2
Dependent Claim
48 words
A resistor composition which comprises: at least one of silicon, silicon monoxide, and higher oxidation state precursor of silicon monoxide; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide.
Claim 3
Dependent Claim
24 words
A resistor composition as claimed in claim 1, wherein the total content of said oxide in the glass is 1.0 to 12.0 mol %.
Claim 4
Dependent Claim
23 words
A resistor composition as claimed in claim 1, wherein at least 10.0 mol % of boron oxide is contained in said borosilicate glass.
Claim 5
Dependent Claim
30 words
A resistor composition as claimed in claim 1, wherein the average particle diameter of said silicon, said silicon monoxide, and said higher oxidation state precursor is 1 μm or below.
Claim 6
Dependent Claim
34 words
A resistor composition as claimed in claim 1, wherein the weight ratio of said silicon, said silicon monoxide, and/or said higher oxidation state precursor of silicon monoxide to said glass is 2:98 to 40:80.
Claim 7
Dependent Claim
51 words
A resistor composition which comprises: a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide, and tantalum pentoxide; at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxide; and a silicide powder.
Claim 8
Dependent Claim
51 words
A resistor composition which comprises: a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide, and tantalum pentoxide; at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxide; and a silicide powder.
Claim 9
Dependent Claim
15 words
A resistor composition as claimed in claim 6, wherein said silicide powder comprises titanium silicide.
Claim 10
Dependent Claim
15 words
A resistor composition as claimed in claim 6, wherein said silicide powder comprises tantalum silicide.
Claim 11
Dependent Claim
20 words
A resistor composition as claimed in claim 6, wherein said silicide powder comprises tantalum silicide, molybdenum silicide, and magnesium silicide.
Claim 12
Dependent Claim
34 words
A resistor composition as claimed in claim 6, wherein the weight ratio of said silicon, said silicon monoxide, and/or said higher oxidation state precursor of silicon monoxide to said glass is 2:98 to 40:80.
Claim 13
Dependent Claim
35 words
A resistor composition as claimed in claim 6, wherein the average particle diameter of said silicide, said silicon, said silicon monoxide, and said higher oxidation state precursor of silicon monoxide is 1 μm or below.
Claim 14
Dependent Claim
52 words
A resistor formed from a resistor composition which comprises at least one of silicon, silicon monoxide, and higher oxidation state precursor of silicon monoxide; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide.
Claim 15
Dependent Claim
52 words
A resistor formed from a resistor composition which comprises at least one of silicon, silicon monoxide, and higher oxidation state precursor of silicon monoxide; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide.
Claim 16
Dependent Claim
34 words
A resistor as claimed in claim 12, wherein said boride comprises at least one of zirconium boride, vanadium boride, chromium borides, tungsten boride, molybdenum boride, manganese boride, titanium boride, niobium boride, and tantalum boride.
Claim 17
Dependent Claim
27 words
A resistor as claimed in claim 12, wherein said boride comprises at least one of ZrB 2 , TaB 2 , NbB 2 , and TiB 2
Claim 18
Dependent Claim
20 words
A resistor as claimed in claim 12 wherein the average particle diameter of said boride is 500 Å or below.
Claim 19
Dependent Claim
55 words
A resistor formed from a resistor composition which comprises a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide, and tantalum pentoxide; at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxide; and a silicide powder.
Claim 20
Dependent Claim
55 words
A resistor formed from a resistor composition which comprises a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide, and tantalum pentoxide; at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxide; and a silicide powder.
Claim 21
Dependent Claim
13 words
A resistor as claimed in claim 16, wherein said silicide comprises titanium silicide.
Claim 22
Dependent Claim
13 words
A resistor as claimed in claim 16, wherein said silicide comprises tantalum silicide.
Claim 23
Dependent Claim
18 words
A resistor as claimed in claim 16, wherein said silicide comprises tantalum silicide, molybdenum silicide, and magnesium silicide.
Claim 24
Dependent Claim
28 words
A resistor as claimed in claim 16, wherein said boride comprises at least one of ZrB 2 , TaB 2 , NbB 2 , and TiB 2 .
Claim 25
Dependent Claim
20 words
A resistor as claimed in claim 16, wherein the average particle diameter of the boride is 500 Å or below.
Claim 26
Independent Claim
89 words
A method of producing a resistor comprising the steps of: forming a resistor paste by dispersing into a vehicle a resistor powder comprising at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxides; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide; applying said resistor paste on a ceramic substrate; drying the applied resistor paste; and firing the dried resistor paste in a non-oxidizing atmosphere.
Claim 27
Independent Claim
89 words
A method of producing a resistor comprising the steps of: forming a resistor paste by dispersing into a vehicle a resistor powder comprising at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxides; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide; applying said resistor paste on a ceramic substrate; drying the applied resistor paste; and firing the dried resistor paste in a non-oxidizing atmosphere.
Claim 28
Dependent Claim
57 words
A method of producing a resistor as claimed in claim 22, wherein, in the step of firing in a non-oxidizing atmosphere, said oxide and a boron oxide are reduced with the silicon, the silicon monoxide, and/or the higher oxidation state precursor of silicon monoxide thereby forming a boride from a metal element constituting said oxide and boron.
Claim 29
Dependent Claim
30 words
A method of producing a resistor as claimed in claim 22, wherein the concentration of oxygen in the step of firing in a non-oxidizing atmosphere is 10 ppm or below.
Claim 30
Dependent Claim
34 words
A method of producing a resistor as claimed in claim 22, wherein the temperature of a high temperature retaining section in the step of firing in a non-oxidizing atmosphere is 850° to 975° C.
Claim 31
Independent Claim
92 words
A method of producing a resistor comprising the steps of: forming a resistor paste by dispersing into a vehicle a resistor powder comprising at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monexide; a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide, and a silicide powder; applying said resistor paste on an inorganic material; drying the applied resistor paste; and firing the dried resistor paste in a non-oxidizing atmosphere.
Claim 32
Independent Claim
92 words
A method of producing a resistor comprising the steps of: forming a resistor paste by dispersing into a vehicle a resistor powder comprising at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monexide; a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide, and a silicide powder; applying said resistor paste on an inorganic material; drying the applied resistor paste; and firing the dried resistor paste in a non-oxidizing atmosphere.
Claim 33
Dependent Claim
61 words
A method of producing a resistor as claimed in claim 26, wherein, in the step of firing in a non-oxidizing atmosphere, said oxide and a boron oxide are reduced with the silicon, the silicon monoxide, and the higher oxidation state precursor of silicon monoxide and the silicide powder thereby forming a boride from a metal element constituting said oxide and boron.
Claim 34
Dependent Claim
30 words
A method of producing a resistor as claimed in claim 26, wherein the concentration of oxygen in the step of firing in a non-oxidizing atmosphere is 10 ppm or below.
Claim 35
Dependent Claim
34 words
A method of producing a resistor as claimed in claim 26, wherein the temperature of a high temperature retaining section in the step of firing in a non-oxidizing atmosphere is 850° to 975° C.
Claim 36
Dependent Claim
38 words
A circuit board having a particular thick film resistor as claimed in claim 12, 13, 14, 15, 16, 17, 18, 19, 20 or 21, and a copper electrode formed on a ceramic substrate and connected to said resistor.
Claim 37
Dependent Claim
16 words
A circuit board as claimed in claim 30, wherein said ceramic substrate is an alumina substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-13 | 2002-02-12 | 2002-08-14 | $7700.00 | Window Closed / Lapsed |