US4948529A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stable high resistance transparent coating
Assignee: Andus Corp
•
Filing: 1988-06-28
•
Granted: 1990-08-14
•
Expires: 2008-06-28
Abstract
Abstract A stable high resistant transparent coating is formed by choosing an undoped wide band gap semiconducting oxide, and by forming a film from elements constituting the undoped oxide and from a dopant which is chosen so as to form a doped wide band gap semiconducting oxide, the doped oxide having an electrical resistance greater than the undoped oxide, the electrical resistance of the doped oxide being such that it equals an optimum value when the coating composition is inherently stable.
Inventors
- 👤 Ian T. Ritchie
- 👤 Wilfred C. Kittler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:07
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/0202; G03G5/04; G03G5/08; G03G5/082
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
109 words
A method of forming a partially transparent conductive coating, comprising the steps of: choosing an undoped wide band gap semiconducting oxide; forming a film from elements constituting the undoped oxide and from a dopant so as to form a doped wide band gap semiconducting oxide, the doped oxide having an electrical resistance greater than the undoped oxide, the doped oxide being one whose electrical resistance first reaches an interim maximum and then reaches an interim minimum as an oxygen concentration thereof is varied and increased, the oxygen concentration of the doped oxide being within ±5% of an oxygen concentration yielding the interim minimum electrical resistance of the doped oxide.
Claim 2
Independent Claim
109 words
A method of forming a partially transparent conductive coating, comprising the steps of: choosing an undoped wide band gap semiconducting oxide; forming a film from elements constituting the undoped oxide and from a dopant so as to form a doped wide band gap semiconducting oxide, the doped oxide having an electrical resistance greater than the undoped oxide, the doped oxide being one whose electrical resistance first reaches an interim maximum and then reaches an interim minimum as an oxygen concentration thereof is varied and increased, the oxygen concentration of the doped oxide being within ±5% of an oxygen concentration yielding the interim minimum electrical resistance of the doped oxide.
Claim 3
Dependent Claim
15 words
The method of claim 1, the film consisting essentially of the elements and the dopant.
Claim 4
Dependent Claim
23 words
The method of claim 1, the doped oxide having an electrical resistance more than an order of magnitude greater than the undoped oxide.
Claim 5
Dependent Claim
23 words
The method of claim 1, the doped oxide having an electrical resistance more than two orders of magnitude greater than the undoped oxide.
Claim 6
Dependent Claim
23 words
The method of claim 1, the doped oxide having an electrical resistance more than three orders of magnitude greater than the undoped oxide.
Claim 7
Dependent Claim
38 words
The method of claim 1, the wide band gap semiconducting oxide including a first metal, a dopant used for doping comprising a second metal, the second metal having an odd number of electrons different than the first metal.
Claim 8
Dependent Claim
23 words
The method of claim 1, the doped oxide oxygen concentration being within ±2% of the oxygen concentration yielding the interim minimum electrical resistance.
Claim 9
Dependent Claim
25 words
The method of claim 1, the doped oxide being produced by sputtering a two metal composite or alloy target in a partial atmosphere of oxygen.
Claim 10
Dependent Claim
21 words
The method of claim 6, the first metal being selected from the group consisting of tin, indium, zinc, lead, and cadmium.
Claim 11
Dependent Claim
11 words
The method of claim 9, the first metal consisting of tin.
Claim 12
Dependent Claim
12 words
The method of claim 9, the second metal being copper or aluminum.
Claim 13
Dependent Claim
12 words
The method of claim 10, the second metal being copper or aluminum.
Claim 14
Dependent Claim
31 words
The method of claim 9, the second metal being selected from the group consisting of copper, aluminum, indium, gallium, boron, thallium, silver, gold, nickel, palladium, platinum, zinc, cadmium, mercury, and vanadium.
Claim 15
Dependent Claim
101 words
A high resistance partially transparent conductive coating, comprising: a wide band gap semiconducting oxide, an undoped composition thereof having a first electrical resistance, the oxide being doped so as to form a doped wide band gap semiconducting oxide whose electrical resistance is increased by an amount greater than an order of magnitude over the undoped composition, the doped oxide being one whose electrical resistance first reaches an interim maximum and then reaches an interim minimum as its oxygen concentration is increased, an oxygen concentration of the doped oxide being within ±5% of an oxygen concentration yielding the interim minimum electrical resistance.
Claim 16
Dependent Claim
101 words
A high resistance partially transparent conductive coating, comprising: a wide band gap semiconducting oxide, an undoped composition thereof having a first electrical resistance, the oxide being doped so as to form a doped wide band gap semiconducting oxide whose electrical resistance is increased by an amount greater than an order of magnitude over the undoped composition, the doped oxide being one whose electrical resistance first reaches an interim maximum and then reaches an interim minimum as its oxygen concentration is increased, an oxygen concentration of the doped oxide being within ±5% of an oxygen concentration yielding the interim minimum electrical resistance.
Claim 17
Dependent Claim
16 words
The coating of claim 14, the doped oxide being at least 70% transparent to visible light.
Claim 18
Dependent Claim
59 words
The coating of claim 14, a metal forming the oxide being chosen from the group consisting of tin, indium, zinc, cadmium and lead, a dopant used for doping the wide band gap semiconducting oxide being a metal chosen from the group consisting of copper, aluminum, indium, gallium, boron, thallium, silver, gold, nickel, palladium, platinum, zinc, cadmium, mercury, and vanadium.
References Cited (Backward Citations)
US4194994A
Cited
FR2430629A1
Cited
US4250228A
Cited
GB2025915A
Cited
US4409134A
Cited
DE3639508A1
Cited
US4816183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-13 | 2002-02-12 | 2002-08-14 | $7700.00 | Window Closed / Lapsed |