Patent US4947598A successfully refreshed from Google Patents.
US4947598A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for grinding the surface of a semiconductor wafer
Assignee: Disco Corp
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Filing: 1983-04-19
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Granted: 1990-08-14
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Expires: 2003-04-19
Abstract
Abstract A dresser made of bonded alundum-type abrasive is ground by a rotating blade made of bonded super abrasive to dress the blade. The surface of a semiconductor wafer is ground by the rotating dressed blade to convert it into a matte-finished surface substantially free from saw marks.
Inventors
- 👤 Mitsuo Sekiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:39
CPC Classifications
H; H10; H10P; H10P50/00; H10P90/00; H10P90/12; H10P90/123; B; B24; B24B; B24B7/00; B24B7/20; B24B7/22; B24B7/228; B24D; B24D7/00; B24D7/02
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
144 words
A method for grinding the surface of a semiconductor wafer wherein a rotary blade made of bonded super abrasive is used for said grinding comprising: carrying out an initial blade dressing step prior to said wafer grinding, said blade dressing step comprising grinding a dresser made of bonded alundum-type abrasive with said rotary blade; and thereafter mounting the wafer on a holding member, disposing said rotary blade made of bonded super abrasive so that its axis of rotation is generally perpendicular to the wafer surface, rotating said rotary blade and grinding the wafer surface with the rotating blade by relatively moving the rotating blade and the holding member in a direction generally perpendicular to the axis of rotation; the blade being made of bonded diamond abrasive and the diamond abrasive having a grain size corresponding to a U.S. mesh number of 1200 to 100.
Claim 2
Independent Claim
144 words
A method for grinding the surface of a semiconductor wafer wherein a rotary blade made of bonded super abrasive is used for said grinding comprising: carrying out an initial blade dressing step prior to said wafer grinding, said blade dressing step comprising grinding a dresser made of bonded alundum-type abrasive with said rotary blade; and thereafter mounting the wafer on a holding member, disposing said rotary blade made of bonded super abrasive so that its axis of rotation is generally perpendicular to the wafer surface, rotating said rotary blade and grinding the wafer surface with the rotating blade by relatively moving the rotating blade and the holding member in a direction generally perpendicular to the axis of rotation; the blade being made of bonded diamond abrasive and the diamond abrasive having a grain size corresponding to a U.S. mesh number of 1200 to 100.
Claim 3
Dependent Claim
47 words
The method of claim 4 wherein the blade dressing step includes mounting the dresser on the holding member, rotating the blade and grinding the dresser with the rotating blade by relatively moving the blade and the dresser in a direction generally perpendicular to the axis of rotation.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein the semiconductor wafer is made of silicon.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein said semiconductor wafer is that before providing circuits thereon.
Claim 6
Dependent Claim
23 words
The method of claim 4 wherein the diamond abrasive has a grain size corresponding to a U.S. mesh number of 1000 to 150.
Claim 7
Dependent Claim
23 words
The method of claim 5 wherein the diamond abrasive has a grain size corresponding to a U.S. mesh number of 800 to 230.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the blade is provided in the annular free end portion of a rotating support member.
Claim 9
Dependent Claim
28 words
The method of claim 7 wherein the blade is of an annular shape extending along the entire circumference of the annular free end portion of the support member.
Claim 10
Dependent Claim
13 words
The method of claim 1 wherein the diamond abrasive is bonded by plating.
Claim 11
Dependent Claim
24 words
The method of claim 1 wherein the blade is formed into a predetermined shape by bonding the diamond abrasive by a metal bonding method.
Claim 12
Dependent Claim
33 words
The method of claim 1 wherein at least the free end portion of the blade extends at an angle α of 100 to 160 degrees to the axis of rotation of the blade.
Claim 13
Dependent Claim
14 words
The method of claim 11 wherein the angle α is 110 to 150 degrees.
Claim 14
Dependent Claim
14 words
The method of claim 12 wherein the angle α is 120 to 140 degrees.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein the free end portion of the blade has a thickness of 0.05 to 2.00 mm.
Claim 16
Dependent Claim
21 words
The method of claim 14 wherein the free end portion of the blade has a thickness of 0.08 to 1.00 mm.
Claim 17
Dependent Claim
21 words
The method of claim 15 wherein the free end portion of the blade has a thickness of 0.10 to 0.50 mm.
Claim 18
Independent Claim
138 words
A method for grinding the surface of a semiconductor wafer wherein a rotary blade made of bonded super abrasive is used for said grinding comprising: carrying out an initial blade dressing step prior to said wafer grinding, said blade dressing step comprising grinding a dresser made of bonded alundum-type abrasive with said rotary blade; and thereafter mounting the wafer on a holding member, disposing said rotary blade made of bonded super abrasive so that its axis of rotation is generally perpendicular to the wafer surface, rotating said rotary blade and grinding the wafer surface with the rotating blade by relatively moving the rotating blade and the holding member in a direction generally perpendicular to the axis of rotation; the peripheral speed of the free end of the blade in the wafer grinding step being 200 to 3000 m/min.
Claim 19
Independent Claim
138 words
A method for grinding the surface of a semiconductor wafer wherein a rotary blade made of bonded super abrasive is used for said grinding comprising: carrying out an initial blade dressing step prior to said wafer grinding, said blade dressing step comprising grinding a dresser made of bonded alundum-type abrasive with said rotary blade; and thereafter mounting the wafer on a holding member, disposing said rotary blade made of bonded super abrasive so that its axis of rotation is generally perpendicular to the wafer surface, rotating said rotary blade and grinding the wafer surface with the rotating blade by relatively moving the rotating blade and the holding member in a direction generally perpendicular to the axis of rotation; the peripheral speed of the free end of the blade in the wafer grinding step being 200 to 3000 m/min.
Claim 20
Dependent Claim
26 words
The method of claim 17 wherein the peripheral speed of the free end of the blade in the wafer grinding step is 300 to 2000 m/min.
Claim 21
Dependent Claim
26 words
The method of claim 18 wherein the peripheral speed of the free end of the blade in the wafer grinding step is 400 to 1300 m/min.
Claim 22
Independent Claim
176 words
A method for grinding the surface of a semiconductor wafer wherein a rotary blade made of bonded super abrasive is used for said grinding comprising: carrying out an initial blade dressing step prior to said wafer grinding, said blade dressing step comprising grinding a dresser made of bonded alundum-type abrasive with said rotary blade; and thereafter mounting the wafer on a holding member, disposing said rotary blade made of bonded super abrasive so that its axis of rotation is generally perpendicular to the wafer surface, rotating said rotary blade and grinding the wafer surface with the rotating blade by relatively moving the rotating blade and the holding member in a direction generally perpendicular to the axis of rotation; the blade dressing step including mounting the dresser on the holding member, rotating the blade and grinding the dresser with the rotating blade by relatively moving the blade and the dresser in a direction generally perpendicular to the axis of rotation, the relative moving speed of the blade and the semiconductor wafer being not more than 1000 m/min.
Claim 23
Independent Claim
176 words
A method for grinding the surface of a semiconductor wafer wherein a rotary blade made of bonded super abrasive is used for said grinding comprising: carrying out an initial blade dressing step prior to said wafer grinding, said blade dressing step comprising grinding a dresser made of bonded alundum-type abrasive with said rotary blade; and thereafter mounting the wafer on a holding member, disposing said rotary blade made of bonded super abrasive so that its axis of rotation is generally perpendicular to the wafer surface, rotating said rotary blade and grinding the wafer surface with the rotating blade by relatively moving the rotating blade and the holding member in a direction generally perpendicular to the axis of rotation; the blade dressing step including mounting the dresser on the holding member, rotating the blade and grinding the dresser with the rotating blade by relatively moving the blade and the dresser in a direction generally perpendicular to the axis of rotation, the relative moving speed of the blade and the semiconductor wafer being not more than 1000 m/min.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-13 | 2002-02-12 | 2002-08-14 | $7700.00 | Window Closed / Lapsed |