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US4947224A
Expired / Lapsed
US
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Solid state image sensing device with photodiode to reduce smearing
Assignee: Panasonic Holdings Corp
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Filing: 1988-09-26
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Granted: 1990-08-07
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Expires: 2008-09-26
Abstract
Abstract In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.
Inventors
- 👤 Takao Kuroda
- 👤 Toshihiro Kuriyama
- 👤 Kenju Horii
- 👤 Hiroyuki Mizuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:15
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10F39/153
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
111 words
A solid state image sensing device comprising: a semiconductor substrate having at least a surface layer on one conductivity type; at least one photoelectric converting region having a conductivity type opposite said surface layer for converting photoenergy to electric charges and storing said electric charges formed in said surface layer of said substrate, said photoelectric converting region being shaped to have a larger horizontal section at a lower portion than at an upper portion to reduce smearing phenomena; at least one charge transfer means for transferring said electric charges stored in photoelectric converting region; and at least one transfer gate formed between said photoelectric converting region and said charge transfer means.
Claim 2
Dependent Claim
111 words
A solid state image sensing device comprising: a semiconductor substrate having at least a surface layer on one conductivity type; at least one photoelectric converting region having a conductivity type opposite said surface layer for converting photoenergy to electric charges and storing said electric charges formed in said surface layer of said substrate, said photoelectric converting region being shaped to have a larger horizontal section at a lower portion than at an upper portion to reduce smearing phenomena; at least one charge transfer means for transferring said electric charges stored in photoelectric converting region; and at least one transfer gate formed between said photoelectric converting region and said charge transfer means.
Claim 3
Dependent Claim
44 words
A solid state image sensing device in accordance with claim 1, wherein said semiconductor substrate comprises a first semiconductor layer that includes said surface layer having a first conductivity type and a second semiconductor layer having a conductivity type opposite said first semiconductor layer.
Claim 4
Dependent Claim
20 words
A solid state image sensing device in accordance with claim 1, wherein said semiconductor substrate comprises only said surface layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-06 | 1994-02-05 | 1994-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-06 | 1998-02-05 | 1998-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-06 | 2002-02-05 | 2002-08-07 | $7700.00 | Window Closed / Lapsed |