US4944811A
Expired / Lapsed
US
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Material for light emitting element and method for crystal growth thereof
Assignee: Mitsubishi Cable Industries Ltd
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Filing: 1989-08-09
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Granted: 1990-07-31
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Expires: 2009-08-09
Abstract
Abstract A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75. According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.
Inventors
- 👤 Tokuzo Sukegawa
- 👤 Kazuyuki Tadatomo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:06
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; C; C30; C30B; C30B19/00; C30B19/02; C30B29/00; C30B29/10; C30B29/40; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10H20/01; H10H20/011; H10H20/013; H10H20/8242; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3442; H01S5/323; H01S5/32308; H01S5/32325; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/066; Y10S148/067; Y10S148/099; Y10S148/119
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
68 words
A material for a light emitting element of at least a two-layered structure comprising a gallium arsenide (GaAs) substrate and a tin (Sn) doped indium gallium phosphide (InGaP) layer whose mixed crystal composition expressed by the molar fraction (x) of gallium phosphide (GaP) is 0.63 to 0.74, wherein a solution comprising Sn as a solvent is used in forming an sn doped InGaP layer on the GaAs substrate.
Claim 2
Dependent Claim
68 words
A material for a light emitting element of at least a two-layered structure comprising a gallium arsenide (GaAs) substrate and a tin (Sn) doped indium gallium phosphide (InGaP) layer whose mixed crystal composition expressed by the molar fraction (x) of gallium phosphide (GaP) is 0.63 to 0.74, wherein a solution comprising Sn as a solvent is used in forming an sn doped InGaP layer on the GaAs substrate.
Claim 3
Dependent Claim
20 words
The material for a light emitting element of claim 1, wherein said Sn doped InGaP layer includes a p-n junction.
Claim 4
Dependent Claim
65 words
The material for a light emitting element of claim 1, further comprising a donor impurity doped InGaP layer developed on said Sn doped InGap layer to provide an at least three-layered structure, the mixed crystal composition of said donor impurity doped InGaP layer as expressed by the molar fraction of GaP being 0.63 to 0.74, said donor impurity doped InGaP layer including a p-n junction.
Claim 5
Dependent Claim
59 words
The material for a light emitting element of claim 1, further comprising a donor impurity doped InGaP layer and an acceptor impurity doped InGaP layer to provide an at least four-layered structure, the mixed crystal composition of said donor impurity doped and acceptor impurity doped InGaP layers as expressed by the molar fraction of GaP being 0.63 to 0.74.
References Cited (Backward Citations)
US3614549A
Cited
US3899371A
Cited
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