US3899371A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming PN junctions by liquid phase epitaxy
Assignee: RCA Corp
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Filing: 1973-06-25
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Granted: 1975-08-12
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Expires: 1993-06-25
Abstract
Abstract Two layers of a semiconductor material composed of three or more elements are deposited in succession by liquid phase epitaxy on a substrate. The layers may be of different conductivity types to form a PN junction therebetween. The layers are deposited from separate solutions containing the semiconductor material and a suitable dopant. During the deposition of the first layer from one of the solutions, both of the solutions are treated in the same manner so that the composition of the second layer is the same as that of the first layer at the junction between the layers.
Inventors
- 👤 Ivan Ladany
- 👤 Vincent Michael Cannuli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:33
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/063; C30B19/10; C30B19/106; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
174 words
A METHOD OF DEPOSITING ON A SUBSTRATE A PAIR OF EPITAXIAL LAYERS OF SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF PROVIDING FIRST AND SECOND SOLUTIONS OF A SEMICONDUCTOR MATERIAL, HAVING SUBSTANTIALLY THE SAME RATIO OF ELEMENTS, DISSOLVED IN A HEATED MOLTEN SOLVENT, BRING FIRST AND SECOND SUBSTRATES INTO CONTACT WITH SAID FIRST AND SECOND SOLUTIONS, RESPECTIVELY, SO THAT A SURFACE OF EACH SUBSTRATE IS IN CONTACT WITH ITS RESPECTIVE SOLUTION COOLING BOTH OF SAID SOLUTIONS TO DEPOSIT FROM EACH SOLUTION A FIRST EPITAXIAL LAYER OF THE RESPECTVE SEMCONDUCTOR MATERIAL ON THE RESPECTIVE SUBSTRATE IN THE SOLUTION, SUCH THAT THE REMAINING PORTIONS OF THE FIRST AND SECOND SOLUTIONS HAVE SUBSTANTIALLY EQUAL ELEMENT RATIOS THEN REMOVING SAID SUBSTRATES FROM THE SOLUTIONS AND MOVING THE FIRST SUBSTRATE INTO THE SECOND SOLUTION SO THAT THE FIRST EPITAXIAL LAYER ON THE FURST SUBSTRATE IS IN CONTACT WITH THE SECOND SOLUTION, AND THEN FURTHER COOLING SAID SECOND SOLUTION TO DEPOSIT FROM SAID SECOND SOLUTION A SECOND EPITAXIAL LAYER OF THE SEMICONDUCTOR MATERIAL ON THE FIRST EPITAXIAL LAYER ON THE FIRST SUBSTRATE.
Claim 2
Independent Claim
174 words
A METHOD OF DEPOSITING ON A SUBSTRATE A PAIR OF EPITAXIAL LAYERS OF SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF PROVIDING FIRST AND SECOND SOLUTIONS OF A SEMICONDUCTOR MATERIAL, HAVING SUBSTANTIALLY THE SAME RATIO OF ELEMENTS, DISSOLVED IN A HEATED MOLTEN SOLVENT, BRING FIRST AND SECOND SUBSTRATES INTO CONTACT WITH SAID FIRST AND SECOND SOLUTIONS, RESPECTIVELY, SO THAT A SURFACE OF EACH SUBSTRATE IS IN CONTACT WITH ITS RESPECTIVE SOLUTION COOLING BOTH OF SAID SOLUTIONS TO DEPOSIT FROM EACH SOLUTION A FIRST EPITAXIAL LAYER OF THE RESPECTVE SEMCONDUCTOR MATERIAL ON THE RESPECTIVE SUBSTRATE IN THE SOLUTION, SUCH THAT THE REMAINING PORTIONS OF THE FIRST AND SECOND SOLUTIONS HAVE SUBSTANTIALLY EQUAL ELEMENT RATIOS THEN REMOVING SAID SUBSTRATES FROM THE SOLUTIONS AND MOVING THE FIRST SUBSTRATE INTO THE SECOND SOLUTION SO THAT THE FIRST EPITAXIAL LAYER ON THE FURST SUBSTRATE IS IN CONTACT WITH THE SECOND SOLUTION, AND THEN FURTHER COOLING SAID SECOND SOLUTION TO DEPOSIT FROM SAID SECOND SOLUTION A SECOND EPITAXIAL LAYER OF THE SEMICONDUCTOR MATERIAL ON THE FIRST EPITAXIAL LAYER ON THE FIRST SUBSTRATE.
Claim 3
Dependent Claim
36 words
The method in accordance with claim 1 in which the semiconductor material in each of the solutions includes at least three elements to deposit epitaxial layers of a semiconductor material comprised of at least three elements.
Claim 4
Dependent Claim
34 words
The method in accordance with claim 2 in which one of said solutions contains a conductivity modifier of one conductivity type and the other solution contains a conductivity modifier of the opposite conductivity type.
Claim 5
Dependent Claim
25 words
The method in accordance with claim 3 including saturating each of the solutions with the semiconductor material prior to bringing the substrates into the solutions.
Claim 6
Dependent Claim
47 words
The method in accordance with claim 4 in which the solutions are saturated with the semiconductor material by bringing source bodies of the semiconductor material into contact with the solutions to allow at least some of the material of the source bodies to dissolve in the solutions.
References Cited (Backward Citations)
US3741825A
Cited
US3753801A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-11 | 1979-02-10 | 1979-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-11 | 1983-02-10 | 1983-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-11 | 1987-02-10 | 1987-08-12 | $7700.00 | Window Closed / Lapsed |