US4942585A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High power semiconductor laser
Assignee: Agere Systems LLC
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Filing: 1987-12-22
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Granted: 1990-07-17
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Expires: 2007-12-22
Abstract
Abstract A heterostructure semiconductor laser provides high power by having a wide output facet so that the power density at the output facet is low enough to avoid catastrophic optical mirror damage. Single transverse mode oscillation occurs in the center of a pumped trapezoidal gain medium layer between the wide output facet and a relatively narrower mirror facet. Stimulated emission of radiation in the balance of the pumped trapezoidal area produces high power output. At the opposite end of the gain layer from the output facet, a parallel edged, index guided pumped region of the gain layer provides a single transverse mode wave guide for assuring single mode output. Preferably the narrower facet has a higher reflectivity than the wider facet, and a non-absorbing window is provided at the wider facet, for lowest lasing threshold and highest power output.
Inventors
- 👤 Jeffrey E. Ungar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:54
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/10; H01S5/16; H01S5/164; H01S5/20; H01S5/0281; H01S5/1053; H01S5/1064
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
114 words
A semiconductor laser comprising: an elongated active gain medium layer; a relatively narrower mirror facet at one end of the gain layer; an output facet at the other end of the gain layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets, the output facet being relatively wider than the mirror facet; means adjacent to only the mirror facet for pumping a parallel edged index guided portion of the gain layer for stimulated emission of radiation in a mode selecting waveguide portion of the gain layer; and means for pumping a diverging portion of the gain layer between the parallel edged portion and the output facet for stimulated emission of radiation.
Claim 2
Dependent Claim
114 words
A semiconductor laser comprising: an elongated active gain medium layer; a relatively narrower mirror facet at one end of the gain layer; an output facet at the other end of the gain layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets, the output facet being relatively wider than the mirror facet; means adjacent to only the mirror facet for pumping a parallel edged index guided portion of the gain layer for stimulated emission of radiation in a mode selecting waveguide portion of the gain layer; and means for pumping a diverging portion of the gain layer between the parallel edged portion and the output facet for stimulated emission of radiation.
Claim 3
Dependent Claim
32 words
A semiconductor laser as recited in claim 1 comprising means for providing a relatively higher reflectivity at the mirror facet and means for providing a relatively lower reflectivity at the output facet.
Claim 4
Dependent Claim
29 words
A semiconductor laser as recited in claim 1 further comprising a non-absorbing window between the end of the diverging pumped portion of the gain layer and the output facet.
Claim 5
Dependent Claim
21 words
A semiconductor laser as recited in claim 3 further comprising a non-absorbing window between the waveguide portion and the mirror facet.
Claim 6
Dependent Claim
92 words
A heterostructure semiconductor laser comprising: an elongated active gain medium layer; a relatively narrower, higher reflectivity mirror facet at one end of the gain layer; a relatively wider, lower reflectivity output facet at the other end of the gain layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets; and means for pumping for stimulated emission of radiation an area of the gain medium having parallel index guided edges adjacent to the mirror facet and having edges diverging from the ends of the parallel edges toward the output facet.
Claim 7
Dependent Claim
92 words
A heterostructure semiconductor laser comprising: an elongated active gain medium layer; a relatively narrower, higher reflectivity mirror facet at one end of the gain layer; a relatively wider, lower reflectivity output facet at the other end of the gain layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets; and means for pumping for stimulated emission of radiation an area of the gain medium having parallel index guided edges adjacent to the mirror facet and having edges diverging from the ends of the parallel edges toward the output facet.
Claim 8
Dependent Claim
28 words
A semiconductor laser as recited in claim 5 further comprising a non-absorbing window between the end of the pumped area of the gain layer and the output facet.
Claim 9
Dependent Claim
22 words
A semiconductor laser as recited in claim 6 further comprising a non-absorbing window between the parallel edged area and the mirror facet.
Claim 10
Dependent Claim
111 words
A heterostructure semiconductor laser comprising: an elongated active gain medium layer; a relatively narrower, higher reflectivity mirror facet at one end of the layer; a relatively wider, lower reflectively output facet at the other end of the layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets; means for pumping for gain guided stimulated emission of radiation an area of the gain layer having edges diverging toward the output facet; means for pumping the gain layer in an elongated area having parallel edges between the narrower end of the diverging area and the mirror, facet; and means for index guiding radiation in the elongated area having parallel edges.
Claim 11
Dependent Claim
111 words
A heterostructure semiconductor laser comprising: an elongated active gain medium layer; a relatively narrower, higher reflectivity mirror facet at one end of the layer; a relatively wider, lower reflectively output facet at the other end of the layer sufficiently aligned with the mirror facet for Fabry-Perot oscillation between the facets; means for pumping for gain guided stimulated emission of radiation an area of the gain layer having edges diverging toward the output facet; means for pumping the gain layer in an elongated area having parallel edges between the narrower end of the diverging area and the mirror, facet; and means for index guiding radiation in the elongated area having parallel edges.
Claim 12
Dependent Claim
26 words
A semiconductor laser as recited in claim 8 wherein the diverging edges diverge at approximately the diffraction angle of radiation from the area having parallel edges.
Claim 13
Dependent Claim
28 words
A semiconductor laser as recited in claim 8 further comprising a non-absorbing window between the end of the diverging area of the gain layer and the output facet.
Claim 14
Dependent Claim
22 words
A semiconductor laser as recited in claim 10 further comprising a non-absorbing window between the parallel edged area and the mirror facet.
Claim 15
Dependent Claim
112 words
A heterostructure semiconductor laser comprising: an active gain medium layer; means for pumping a longitudinally symmetrical trapezoidal area of the gain layer for stimulating radiation therein; an at least partially reflective facet adjacent to the wider parallel edge of the trapezoidal area for forming a Fabry-Perot cavity; a non-pumped area of the gain layer lying along each non-parallel edge of the trapezoidal area; means for pumping an area of the gain layer having parallel index guiding edges extending normal to the smaller parallel edge of the trapezoidal area; and an at least partially reflective facet at the end of the index guided area remote from the smaller edge of the trapezoidal area.
Claim 16
Dependent Claim
112 words
A heterostructure semiconductor laser comprising: an active gain medium layer; means for pumping a longitudinally symmetrical trapezoidal area of the gain layer for stimulating radiation therein; an at least partially reflective facet adjacent to the wider parallel edge of the trapezoidal area for forming a Fabry-Perot cavity; a non-pumped area of the gain layer lying along each non-parallel edge of the trapezoidal area; means for pumping an area of the gain layer having parallel index guiding edges extending normal to the smaller parallel edge of the trapezoidal area; and an at least partially reflective facet at the end of the index guided area remote from the smaller edge of the trapezoidal area.
References Cited (Backward Citations)
US4251780A
Cited
US4546481A
Cited
US4545057A
Cited
JPS5944884A
Cited
US4523316A
Cited
US4523317A
Cited
US4594718A
Cited
US4581742A
Cited
JPS61168286A
Cited
US4689797A
Cited
US4713821A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-16 | 1994-01-15 | 1994-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-16 | 1998-01-15 | 1998-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-16 | 2002-01-15 | 2002-07-17 | $7700.00 | Window Closed / Lapsed |