US4942448A
Expired / Lapsed
US
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Structure for isolating semiconductor components on an integrated circuit and a method of manufacturing therefor
Assignee: Mitsubishi Electric Corp
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Filing: 1988-10-25
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Granted: 1990-07-17
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Expires: 2008-10-25
Abstract
Abstract A semiconductor apparatus having a region for isolation between devices comprises a semiconductor substrate, a polycrystalline silicon layer portions selectively formed to be spaced apart from each other on the semiconductor substrate, an impurity diffused region formed under the polycrystalline silicon layer, and a silicon oxide film for filling in a space between the respective adjacent portions of the polycrystalline silicon layer. The impurity diffused region constitutes a source or drain region of a field effect device such as a MOS transistor isolated by the silicon oxide film.
Inventors
- 👤 Katsuhiro Tsukamoto
- 👤 Masahide Inuishi
- 👤 Masahiro Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:24
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
131 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart rom each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed in said semiconductor substrate under said polycrystalline silicon layer; and an insulating layer including an oxide film formed on said main surface of said semiconductor substrate to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer oxide film.
Claim 2
Dependent Claim
131 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart rom each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed in said semiconductor substrate under said polycrystalline silicon layer; and an insulating layer including an oxide film formed on said main surface of said semiconductor substrate to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer oxide film.
Claim 3
Dependent Claim
26 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 1, wherein said insulating layer oxide film is a silicon oxide film.
Claim 4
Dependent Claim
41 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 1, wherein said semiconductor apparatus comprises a plurality of semiconductor devices isolated from each other by said insulating layer on the main surface of said semiconductor substrate.
Claim 5
Dependent Claim
25 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 3, wherein each of said semiconductor devices comprises said semiconductor region.
Claim 6
Dependent Claim
27 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 4, wherein said semiconductor region constitutes one portion of a field effect device.
Claim 7
Dependent Claim
25 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 5, wherein said field effect device comprises a complementary MOS transistor.
Claim 8
Dependent Claim
24 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 5 wherein said field effect device comprises a MOS transistor.
Claim 9
Dependent Claim
77 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 5, wherein said field effect device comprises an insulated gate, a first electrode and a second electrode formed spaced apart from each other under said insulating gate on the main surface of said semiconductor substrate, said semiconductor region constituting any of said first electrode and said second electrode, a channel region being formed on said semiconductor substrate between said first and second electrodes.
Claim 10
Dependent Claim
33 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 8, wherein at least either said first electrode or said second electrode is joined to said polycrystalline silicon layer.
Claim 11
Dependent Claim
39 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 9, wherein an inversion preventing region for preventing inversion of conductivity types is formed in a region of said semiconductor substrate under said insulating layer.
Claim 12
Dependent Claim
43 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 10, wherein said inversion preventing region has the same conductivity type as that of said semiconductor substrate and has an impurity concentration higher than that of said semiconductor substrate.
Claim 13
Dependent Claim
125 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart from each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed under said polycrystalline silicon layer; and an insulating layer to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer, said insulating layer comprising a silicon oxide film containing undoped polycrystalline silicon therein.
Claim 14
Dependent Claim
125 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart from each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed under said polycrystalline silicon layer; and an insulating layer to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer, said insulating layer comprising a silicon oxide film containing undoped polycrystalline silicon therein.
Claim 15
Dependent Claim
41 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 12, wherein said semiconductor apparatus comprises a plurality of semiconductor devices isolated from each other by said insulating layer on the main surface of said semiconductor substrate.
Claim 16
Dependent Claim
25 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 13, wherein each of said semiconductor devices comprises said semiconductor region.
Claim 17
Dependent Claim
27 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 14, wherein said semiconductor region constitutes one portion of a field effect device.
Claim 18
Dependent Claim
25 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 15, wherein said field effect device comprises a complementary MOS transistor.
Claim 19
Dependent Claim
24 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 15, wherein said field effect device comprises a MOS transistor.
Claim 20
Dependent Claim
77 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 15, wherein said field effect device comprises an insulated gate, a first electrode and a second electrode formed spaced apart from each other under said insulating ate on the main surface of said semiconductor substrate, said semiconductor region constituting any of said first electrode and said second electrode, a channel region being formed on said semiconductor substrate between said first and second electrodes.
Claim 21
Dependent Claim
33 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 18, wherein at least either said first electrode or said second electrode is joined to said polycrystalline silicon layer.
Claim 22
Dependent Claim
39 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 19, wherein an inversion preventing region for preventing inversion of conductivity types is formed in a region of said semiconductor substrate under said insulating layer.
Claim 23
Dependent Claim
43 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 20, wherein said inversion preventing region has the same conductivity type as that of said semiconductor substrate and has an impurity concentration higher than that of said semiconductor substrate.
Claim 24
Dependent Claim
134 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart from each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed under said polycrystalline silicon layer; and an insulating layer including an oxide film to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer, said insulating layer has an upper surface substantially coplanar with an upper surface of said polycrystalline silicon layer.
Claim 25
Dependent Claim
134 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart from each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed under said polycrystalline silicon layer; and an insulating layer including an oxide film to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer, said insulating layer has an upper surface substantially coplanar with an upper surface of said polycrystalline silicon layer.
Claim 26
Dependent Claim
26 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 22, wherein said insulating layer comprises at least a silicon oxide film
Claim 27
Dependent Claim
41 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 22, wherein said semiconductor apparatus comprises a plurality of semiconductor devices isolated from each other by said insulating layer on the main surface of said semiconductor substrate.
Claim 28
Dependent Claim
25 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 24, wherein each of said semiconductor devices comprises said semiconductor region.
Claim 29
Dependent Claim
26 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 25, wherein said semiconductor region constitutes one portion of a field effect.
Claim 30
Dependent Claim
24 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 26, wherein said field effect device comprises a MOS transistor.
Claim 31
Dependent Claim
25 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 26, wherein said field effect device comprises a complementary MOS transistor.
Claim 32
Dependent Claim
77 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 26, wherein said field effect device comprises an insulated gate, a first electrode and a second electrode formed spaced apart from each other under said insulating gate on the main surface of said semiconductor substrate, said semiconductor region constituting any of said first electrode and said second electrode, a channel region being formed on said semiconductor substrate between said first and second electrodes.
Claim 33
Dependent Claim
33 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 29, wherein at least either said first electrode or said second electrode is joined to said polycrystalline silicon layer.
Claim 34
Dependent Claim
39 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 30, wherein an inversion preventing region for preventing inversion of conductivity types is formed in a region of said semiconductor substrate under said insulating layer.
Claim 35
Dependent Claim
43 words
A semiconductor apparatus having a region for isolation between devices in accordance with claim 31, wherein said inversion preventing region has the same conductivity type as that of said semiconductor substrate and has an impurity concentration higher than that of said semiconductor substrate.
Claim 36
Dependent Claim
142 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart from each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed under said polycrystalline silicon layer; and an insulating layer to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer, said insulating layer has an upper surface substantially coplanar with an upper surface of said polycrystalline silicon layer, said insulating layer including a silicon oxide film of undoped polycrystalline silicon.
Claim 37
Dependent Claim
142 words
A semiconductor apparatus having a region for isolation between devices comprising: a semiconductor substrate having a main surface and having a predetermined impurity concentration of a certain conductivity type; portions of a polycrystalline silicon layer selectively formed spaced apart from each other on the main surface of said semiconductor substrate; a semiconductor region of the inverse conductivity type from that of said semiconductor substrate, formed under said polycrystalline silicon layer; and an insulating layer to fill in a portion in which the main surface of said semiconductor substrate is exposed between adjacent portions of said polycrystalline silicon layer spaced from each other, whereby said semiconductor region is isolated by said insulating layer, said insulating layer has an upper surface substantially coplanar with an upper surface of said polycrystalline silicon layer, said insulating layer including a silicon oxide film of undoped polycrystalline silicon.
References Cited (Backward Citations)
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