Solid state color imaging sensor having a color filter array

Claim 1

A solid state color image sensing device comprising a semiconductive support having a surface comprising an array of light sensing pixels and superimposed thereon in microregistration of color filter array having at least three sets of dyed filter elements characterized in that at least one set of said filter elements is formed from a negative=working dyeable photoresist composition comprising, in admixture, (a) a poly(vinyl alcohol) binder, (b) a radiation-sensitive dichromate, and (c) a polymeric mordant comprising recurring units derived from a quaternized N-vinylimidazole wherein said polymeric mordant contains recurring units: ##STR7## wherein: A is a unit derived from an ethylenically unsaturated monomer: each R 1 is independently H or methyl; Q is alkyl or aryl; X- is an acid anion; x is 0 to 65 mole percent; y is 0 to 95 mole percent; and z is 5 to 50 mole percent.

Claim 5

A method of making a solid state color image sensing device comprising a semiconductive support having a surface comprising an array of light sensing pixels having thereon a color filter array having at least three sets of dyed filter elements, said method comprising the steps of: (1) providing a semiconductive support having a surface comprising an array of light sensing pixels, (2) forming on said surface a layer of a negative-working dyeable photoresist composition comprising, in admixture (a) a poly(vinyl alcohol) binder, (b) a radiation-sensitive dichromate and (c) a polymeric mordant comprising recurring units derived from a quaternized N-vinylimidazole wherein said polymeric mordant contains recurring units: ##STR8## wherein: A is a unit derived from an ethylenically unsaturated monomer; each R 1 is independently H or methyl; Q is alkyl or aryl; X- is an acid anion; x is 0 to 65 mole percent; y is 0 to 95 mole percent; and z is 5 to 50 mole percent; (3) exposing and developing said photoresist layer so that only the exposed areas remain and form a set of dyeable filter elements superimposed in microregistration on some of said light sensing pixels, and (4) dyeing said filter elements formed in step (3) by contacting them with at least one dye thereby forming a set of dyed filter elements.

Claim 6

A method of making a solid state color image sensing device comprising a semiconductive support having a surface comprising an array of light sensing pixels having thereon a color filter array having at least three sets of dyed filter elements, said method comprising the steps of: (1) providing a semiconductive support having a surface comprising an array of light sensing pixels, (2) forming on said surface a layer of a negative-working dyeable photoresist composition comprising, in admixture (a) a poly(vinyl alcohol) binder, (b) a radiation-sensitive dichromate and (c) a polymeric mordant comprising recurring units derived from a quaternized N-vinylimidazole wherein said polymeric mordant contains recurring units: ##STR8## wherein: A is a unit derived from an ethylenically unsaturated monomer; each R 1 is independently H or methyl; Q is alkyl or aryl; X- is an acid anion; x is 0 to 65 mole percent; y is 0 to 95 mole percent; and z is 5 to 50 mole percent; (3) exposing and developing said photoresist layer so that only the exposed areas remain and form a set of dyeable filter elements superimposed in microregistration on some of said light sensing pixels, and (4) dyeing said filter elements formed in step (3) by contacting them with at least one dye thereby forming a set of dyed filter elements.