High temperature superconducting thin film structure and method of making

Claim 2

A high temperature superconducting thin film structure, said structure comprising a substrate and a high T c superconducting thin film spaced from said substrate, a diffusion barrier layer in the space between said substrate and said high T c superconducting thin film wherein the diffusion barrier layer is lattice matched both to the substrate and to the superconducting film and wherein the diffusion barrier layer has a high chemical stability, a high melting point, and a high electrical conductivity, and wherein the diffusion barrier layer is a compound selected from the group consisting of YB 2 , TbB 2 , VN, VC, V 2 C 3 , CrN, W 2 N, GdB, DyB, HoB, the tetragonal tetraborides of Y, Pu, Ce, Sm, and Er, the hexaborides of Ca, Sr, Y, Th, Pu, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and the tetrafluoride of Zr, ZrF 4 , and wherein the substrate is a single crystal selected from the group consisting of strontium titanate, SrTiO 3 , yttria-stabilized zirconia, ZrO 2 --(Y), alumina, Al 2 O 3 , and magnesium oxide, MgO, and wherein the superconducting thin film material is selected from the group consisting of YBa 2 Cu 3 O 7 , Tl 2 Ba 2 CaCu 2 O 8 , Bi 2 CaSr 3 Cu 2 O 7-x , BiCaSrCu 2 O 7-x , Bi 2 Ca 2 SrCu 3 O 7-x , and BiCa 2 Sr 3 Cu 4 O 7-x where x can range from zero to 1.

Claim 3

A high temperature superconducting thin film structure according to claim 1 having an hermetic cap layer to prevent further modification of the superconducting film.

Claim 4

A high temperature superconducting thin film structure according to claim 2 wherein the diffusion barrier layer is a compound selected from the group consisting of YB 2 , TbB 2 , VN, VC, U 2 C 3 , CrN, W 2 N, GdB 2 , DyB 2 , HoB 2 , the tetragonal tetraborides of Y, Pu, Ce, Sm, and Er, the hexaborides of Ca, Sr, Ba, Sc, Y, Th, Pu, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and the tetrafluoride of Zr, ZrF 4 , wherein the substrate is a single crystal selected from the group consisting of strontium titanate, SrTiO 3 , yttria-stabilized zirconia, ZrO 2 --(Y), alumina Al 2 O 3 , and magnesium oxide, MgO and wherein the superconducting thin film material is selected from a group consisting of YBa 2 Cu 3 O 7 , Tl 2 Ba 2 CaCu 2 O 8 , Bi 2 CaSr 2 Cu 2 O 7-x , BiCaSrCu 2 O 7-x , Bi 2 Ca 2 SrCu 3 O 7-x , and BiCa 2 Sr 3 Cu 4 O 7-x , where x can range from zero to 1.

Claim 5

Method of making a superconducting thin film structure from a suitably polished substrate, wherein the substrate is a single crystal selected from the group consisting of strontium titanate, SrTiO 3 , yttria stabilized zirconia ZrO 2 --(Y), alumina, Al 2 O 3 and magnesium oxide, MgO, said method including the steps of: (A) loading the substrate into a vacuum deposition chamber and pumping the chamber down, (B) vacuum depositing a diffusion barrier layer onto the substrate at a temperature suitable for epitaxial growth, wherein the diffusion barrier layer is a compound selected from the group consisting of YB 2 , TbB 2 , VN, VC, U 2 C 3 , CrN, W 2 N, GdB 2 , DyB 2 , HoB 2 , the tetragonal tetraborides of Y, Pu, Ce, Sm and Er, the hexaborides of Ca, Sr, Ba, Sc, Y, Th, Pu, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, and Lu, and the tetrafluoride of Zr, ZrF 4 , (C) vacuum depositing a superconducting thin film onto the diffusion barrier layer, wherein the superconducting thin film material is selected from the group consisting of YBa 2 Cu 3 O 7 , Tl 2 Ba 2 CaCu 2 O 8 , Bi 2 CaSr 2 Cu 2 O 7-x , Bi 2 CaSr 2 Cu 3 O 7-x , and BiCa 2 Sr 3 Cu 4 O 7-x , where x can range from zero to 1, (D) annealing the superconducting thin layer in an oxygen ambient, and (E) evaporating a hermetic cap onto the superconducting thin film to prevent further modification of the superconducting film.

Claim 6

Method of making a superconducting thin film structure from a suitably polished substrate, wherein the substrate is a single crystal selected from the group consisting of strontium titanate, SrTiO 3 , yttria stabilized zirconia ZrO 2 --(Y), alumina, Al 2 O 3 and magnesium oxide, MgO, said method including the steps of: (A) loading the substrate into a vacuum deposition chamber and pumping the chamber down, (B) vacuum depositing a diffusion barrier layer onto the substrate at a temperature suitable for epitaxial growth, wherein the diffusion barrier layer is a compound selected from the group consisting of YB 2 , TbB 2 , VN, VC, U 2 C 3 , CrN, W 2 N, GdB 2 , DyB 2 , HoB 2 , the tetragonal tetraborides of Y, Pu, Ce, Sm and Er, the hexaborides of Ca, Sr, Ba, Sc, Y, Th, Pu, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, and Lu, and the tetrafluoride of Zr, ZrF 4 , (C) vacuum depositing a superconducting thin film onto the diffusion barrier layer, wherein the superconducting thin film material is selected from the group consisting of YBa 2 Cu 3 O 7 , Tl 2 Ba 2 CaCu 2 O 8 , Bi 2 CaSr 2 Cu 2 O 7-x , Bi 2 CaSr 2 Cu 3 O 7-x , and BiCa 2 Sr 3 Cu 4 O 7-x , where x can range from zero to 1, (D) annealing the superconducting thin layer in an oxygen ambient, and (E) evaporating a hermetic cap onto the superconducting thin film to prevent further modification of the superconducting film.

Claim 7

Method according to claim 4 wherein in step (B) the temperature is about 500° to about 700° C.