Patent US4938798A successfully refreshed from Google Patents.
US4938798A
Expired / Lapsed
US
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Sputtering target and process for preparing the same
Assignee: Proterial Ltd
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Filing: 1988-03-07
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Granted: 1990-07-03
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Expires: 2008-03-07
Abstract
Abstract A high melting metal silicide sputtering target which comprises a fine texture whose stoichiometric composition grains of MSi2, where M represents a high melting metal, have a maximum grain size of 20 mu m, whose free silicon grains have a maximum grain size of 50 mu m and whose oxygen content is not more than 200 ppm and has a density ratio to the theoretical density of 99% or more has good film characteristics including the reduction in the number of grains formed on the sputtered film and is useful as an electrode material or a wiring material in semi-conductor devices.
Inventors
- 👤 Yoshitaka Chiba
- 👤 Noriyoshi Hirao
- 👤 Toru Sugihara
- 👤 Kenji Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:41
CPC Classifications
C; C22; C22C; C22C29/00; C22C29/18; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/58085; C04B35/58092; C04B35/622; C04B35/64; C04B35/645; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; C04B2235/00; C04B2235/02; C04B2235/30; C04B2235/40; C04B2235/404; C04B2235/42; C04B2235/428; C04B2235/50; C04B2235/54; C04B2235/5418; C04B2235/5436; C04B2235/70; C04B2235/72; C04B2235/723; C04B2235/74; C04B2235/77; C04B2235/78; C04B2235/786; C04B2235/80; C04B2235/95
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
88 words
A high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semi-conductor devices, which comprises a fine textured non-stoichiometric material whose stoichiometric composition grains of MSi 2 , where M represents a high melting point metal, have a maximum grain size of 20 μm, whose free silicon grains have a maximum grain size of 50 μm, whose oxygen content is not more than 200 ppm, and which has a density with respect to the theoretical density of 99% or more.
Claim 2
Dependent Claim
88 words
A high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semi-conductor devices, which comprises a fine textured non-stoichiometric material whose stoichiometric composition grains of MSi 2 , where M represents a high melting point metal, have a maximum grain size of 20 μm, whose free silicon grains have a maximum grain size of 50 μm, whose oxygen content is not more than 200 ppm, and which has a density with respect to the theoretical density of 99% or more.
Claim 3
Dependent Claim
117 words
A high melting point metal silicide-based target for use as an electrode material or a wiring material in semi-conductor devices which comprises a fine textured non-stoichiometric material whose uranium and thorium contents are not more than 0.1 ppm, whose sodium and potassium contents are not more than 1 ppm, whose oxygen content is not more than 200 ppm, whose stoichiometric composition grains of MSi 2 , where M represents a high melting point metal, have a maximum grain size of 20 μm, whose free silicon grains have a maximum grain size of 50 μm, which has a density with respect to the theoretical density of 99% or higher, and which has a purity of 99.99% or higher.
Claim 4
Dependent Claim
117 words
A high melting point metal silicide-based target for use as an electrode material or a wiring material in semi-conductor devices which comprises a fine textured non-stoichiometric material whose uranium and thorium contents are not more than 0.1 ppm, whose sodium and potassium contents are not more than 1 ppm, whose oxygen content is not more than 200 ppm, whose stoichiometric composition grains of MSi 2 , where M represents a high melting point metal, have a maximum grain size of 20 μm, whose free silicon grains have a maximum grain size of 50 μm, which has a density with respect to the theoretical density of 99% or higher, and which has a purity of 99.99% or higher.
Claim 5
Dependent Claim
128 words
A process for preparing a high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semiconductor devices, which comprises mixing high purity, high melting point metal powder having particle sizes of about 15 μm or less with an excess over a stoichiometric amount of high purity silicon powder having particle sizes of about 20 μm or less, subjecting the resulting mixture to silicidizing reaction in a high vacuum, thereby obtaining a calcined product, placing the calcined product in a sealable vessel for compact pressing, sealing the vessel after evacuation of the vessel into a vacuum, and sintering the calcined product in a hot isostatic press while pressing to a density of 99% or higher with respect to the theoretical density.
Claim 6
Dependent Claim
128 words
A process for preparing a high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semiconductor devices, which comprises mixing high purity, high melting point metal powder having particle sizes of about 15 μm or less with an excess over a stoichiometric amount of high purity silicon powder having particle sizes of about 20 μm or less, subjecting the resulting mixture to silicidizing reaction in a high vacuum, thereby obtaining a calcined product, placing the calcined product in a sealable vessel for compact pressing, sealing the vessel after evacuation of the vessel into a vacuum, and sintering the calcined product in a hot isostatic press while pressing to a density of 99% or higher with respect to the theoretical density.
Claim 7
Dependent Claim
137 words
A process for preparing a high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semi-conductor devices, which comprises mixing ultra high purity, high melting metal powder obtained by subjecting high melting point metal powder having a purity of 99.99% or greater to reaction with a hydrogen fluoride gas in advance, thereby forming a metal fluoride, purifying the metal fluoride through distillation, thereby removing uranium, thorium, sodium and potassium therefrom, followed by ammoniation, oxidation, and successive reduction with high purity silicon powder, subjecting the mixture to silicidizing reaction in a high vacuum, thereby forming a calcined product, placing the calcined product in a sealable container for compact pressing, sealing the container after evacuation of the container to a vacuum, and sintering the calcined product in a hot isostatic press.
Claim 8
Dependent Claim
137 words
A process for preparing a high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semi-conductor devices, which comprises mixing ultra high purity, high melting metal powder obtained by subjecting high melting point metal powder having a purity of 99.99% or greater to reaction with a hydrogen fluoride gas in advance, thereby forming a metal fluoride, purifying the metal fluoride through distillation, thereby removing uranium, thorium, sodium and potassium therefrom, followed by ammoniation, oxidation, and successive reduction with high purity silicon powder, subjecting the mixture to silicidizing reaction in a high vacuum, thereby forming a calcined product, placing the calcined product in a sealable container for compact pressing, sealing the container after evacuation of the container to a vacuum, and sintering the calcined product in a hot isostatic press.
Claim 9
Dependent Claim
134 words
A process for preparing a high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semi-conductor devices, which comprises mixing high density, high melting point metal powder having a purity of 99.99% or greater with an excess over stoichiometric amount of high purity silicon powder, subjecting the resulting mixture to silicidizing reaction in a high vacuum, thereby obtaining a calcined product, disintegrating the calcined product to powder having sizes of 30 mesh and under in an argon-sealed ball mill, placing the disintegrated powder in a sealable vessel for compact pressing, sealing the vessel after evacuation of the vessel into a vacuum, and sintering the calcined product in a hot isostatic press while pressing to a density of 99% or higher with respect to the theoretical density.
Claim 10
Dependent Claim
134 words
A process for preparing a high melting point metal silicide-based sputtering target for use as an electrode material or a wiring material in semi-conductor devices, which comprises mixing high density, high melting point metal powder having a purity of 99.99% or greater with an excess over stoichiometric amount of high purity silicon powder, subjecting the resulting mixture to silicidizing reaction in a high vacuum, thereby obtaining a calcined product, disintegrating the calcined product to powder having sizes of 30 mesh and under in an argon-sealed ball mill, placing the disintegrated powder in a sealable vessel for compact pressing, sealing the vessel after evacuation of the vessel into a vacuum, and sintering the calcined product in a hot isostatic press while pressing to a density of 99% or higher with respect to the theoretical density.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-02 | 1994-01-01 | 1994-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-02 | 1998-01-01 | 1998-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-02 | 2002-01-01 | 2002-07-03 | $7700.00 | Window Closed / Lapsed |