Patent US4937638A successfully refreshed from Google Patents.
US4937638A
Expired / Lapsed
US
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Edge emitting light emissive diode
Assignee: Nortel Networks Ltd
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Filing: 1988-09-01
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Granted: 1990-06-26
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Expires: 2008-09-01
Abstract
Abstract An edge emitting light emissive diode for coupling light into single mode fibre has at its front end a structure (7) similar to that of a ridge laser, this structure being terminated at its rear end with a planar region (8) which is unpumped.
Inventors
- 👤 Richard S. Butlin
- 👤 Andrew J. N. Houghton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:42
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H01; H01S; H01S5/00; H01S5/06; H01S5/0601; H01S5/10; H01S5/1053; H01S5/1064; H01S5/20; H01S5/22; H10H20/816; H10H20/8162; H10H20/83; H10H20/831; H10H20/832
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
193 words
An electroded edge emissive light emissive diode chip which is structured to confine current injection across the p-n junction of the diode substantially exclusively to an active region, said active region extending for a length along an axis from substantially one end facet of the chip, the output facet, to a point intermediate said output facet and the opposite end facet, which chip has a refractive index structure, said structure providing, for the axial length of the active region, real optical waveguiding in all directions at right angles to said axis, and, for the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet, no real optical waveguiding for at least one direction at right angles to said axis, wherein the length of the active region is such that substantially no superluminescence is emitted by the chip at least down to a temperature of 10° C. over an operating current range of 0 to 100 mA, and wherein in the active region said refractive index structure has a profile providing substantially single mode waveguiding for matching with that of a single mode fibre.
Claim 2
Dependent Claim
193 words
An electroded edge emissive light emissive diode chip which is structured to confine current injection across the p-n junction of the diode substantially exclusively to an active region, said active region extending for a length along an axis from substantially one end facet of the chip, the output facet, to a point intermediate said output facet and the opposite end facet, which chip has a refractive index structure, said structure providing, for the axial length of the active region, real optical waveguiding in all directions at right angles to said axis, and, for the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet, no real optical waveguiding for at least one direction at right angles to said axis, wherein the length of the active region is such that substantially no superluminescence is emitted by the chip at least down to a temperature of 10° C. over an operating current range of 0 to 100 mA, and wherein in the active region said refractive index structure has a profile providing substantially single mode waveguiding for matching with that of a single mode fibre.
Claim 3
Dependent Claim
46 words
A light emissive diode chip as claimed in claim 1 wherein the length of the active region is such that substantially no superluminescence is emitted at least over the temperature range 0° C. to 70° C. over an operating current range of 0 to 100 mA.
Claim 4
Dependent Claim
64 words
A light emissive diode chip as claimed in claim 1, wherein the axial length of the active region lies in the range from 100 to 200 μm , and where the axial length of the region of the chip extending along said axis beyond said active region between said intermediate point and said opposite facet lies in the range from 80 to 250 μm.
Claim 5
Dependent Claim
16 words
A light emissive diode chip as claimed in claim 1, which chip is made of InGaAsP.
Claim 6
Dependent Claim
28 words
A light emissive diode chip as claimed in claim 1, wherein a part of the real optical waveguiding in the active region is provided by a ridge structure.
Claim 7
Dependent Claim
16 words
A light sensitive diode chip as claimed in claim 5, which chip is made of InGaAsP.
Claim 8
Dependent Claim
46 words
A light emissive diode chip as claimed in claim 6, wherein the length of the active region is such that substantially no superluminescence is emitted at least over the temperature range 0° C. to 70° C. over an operating current range of 0 to 100 mA.
Claim 9
Dependent Claim
64 words
A light emissive diode chip as claimed in claim 7 wherein the axial length of the active region lies in the range from 100 to 200 μm , and wherein the axial length of the region of the chip extending along said axis beyond said active region between said intermediate point and said opposite facet lies in the range from 80 to 250 um.
Claim 10
Dependent Claim
209 words
An electroded edge emissive light emissive diode chip which is structured to confine current injection across the p-n junction of the diode substantially exclusively to an active region, said active region extending for a length along an axis from substantially one end facet of the chip, the output facet, to a point intermediate said output facet and the opposite end facet, which chip has a refractive index structure, said structure providing, for the axial length of the active region, real optical waveguiding in all directions at right angles to said axis, and, for the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet, no real optical waveguiding for at least one direction at right angles to said axis, wherein the axial length of the active region lies in the range from 100 to 200 um, and wherein the axial length of the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet lies in the range from 80 to 250 um, and wherein in the active region said refractive index structure has a profile providing substantially single mode waveguiding for matching with that of a single mode fibre.
Claim 11
Dependent Claim
209 words
An electroded edge emissive light emissive diode chip which is structured to confine current injection across the p-n junction of the diode substantially exclusively to an active region, said active region extending for a length along an axis from substantially one end facet of the chip, the output facet, to a point intermediate said output facet and the opposite end facet, which chip has a refractive index structure, said structure providing, for the axial length of the active region, real optical waveguiding in all directions at right angles to said axis, and, for the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet, no real optical waveguiding for at least one direction at right angles to said axis, wherein the axial length of the active region lies in the range from 100 to 200 um, and wherein the axial length of the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet lies in the range from 80 to 250 um, and wherein in the active region said refractive index structure has a profile providing substantially single mode waveguiding for matching with that of a single mode fibre.
Claim 12
Dependent Claim
222 words
An electroded InGaAsP edge emissive light emissive diode chip which is structured to confine current injection across the p-n junction of the diode substantially exclusively to an active region, said active region extending for a length along an axis from substantially one end facet of the chip, the output facet, to a point intermediate said output facet and the opposite end facet, which chip has a refractive index structure, said structure providing, for the axial length of the active region, real optical waveguiding in all directions at right angles to said axis, part of which real optical waveguiding is provided by a ridge structure, and, for the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet, no real optical waveguiding for at least one direction at right angles to said axis, wherein the axial length of the active region lies in the range from 100 to 200 um, and wherein the axial length of the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet lies in the range from 80 to 250 um, and wherein in the active region said refractive index structure has a profile providing substantially single mode waveguiding for matching with that of a single mode fibre.
Claim 13
Dependent Claim
222 words
An electroded InGaAsP edge emissive light emissive diode chip which is structured to confine current injection across the p-n junction of the diode substantially exclusively to an active region, said active region extending for a length along an axis from substantially one end facet of the chip, the output facet, to a point intermediate said output facet and the opposite end facet, which chip has a refractive index structure, said structure providing, for the axial length of the active region, real optical waveguiding in all directions at right angles to said axis, part of which real optical waveguiding is provided by a ridge structure, and, for the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet, no real optical waveguiding for at least one direction at right angles to said axis, wherein the axial length of the active region lies in the range from 100 to 200 um, and wherein the axial length of the region of the chip extending along the axis beyond the active region between said intermediate point and said opposite facet lies in the range from 80 to 250 um, and wherein in the active region said refractive index structure has a profile providing substantially single mode waveguiding for matching with that of a single mode fibre.
References Cited (Backward Citations)
GB1600965A
Cited
GB2090056A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-25 | 2001-12-25 | 2002-06-26 | $7700.00 | Window Closed / Lapsed |