Structure and driving method of interline transfer CCD image sensor

Claim 2

An interline transfer CCD (charge coupled device) image sensor comprising: a CCD shift register including a plurality of CCD register elements, said CCD shift register being formed of a continuous diffusion layer semiconductor channel of a single semiconductor conductivity type; a plurality of PN junction photosensor elements aligned along said CCD shift register, each one of said plurality of PN junction photosensor elements being associated with a corresponding one of said plurality of CCD register elements to form a sensor unit; a transfer gate interposed between said each one of said plurality of PN junction photosensor elements and said corresponding one of said plurality of CCD register elements in said sensor unit; said corresponding one of said plurality of CCD register elements including, a portion of said continuous diffusion layer semiconductor channel, and register electrode means formed on said semiconductor channel for performing a shift operation in said CCD shift register, said register electrode means being extended toward said one of said plurality of PN junction photosensor elements to cover said transfer gate and reach the edge of said one of said plurality of PN junction photosensor elements included in said sensor unit, said register electrode means consisting essentially of a plurality of alternating first and second electrodes; and means for driving said register electrode means to transfer light intensity information to each said register element from its corresponding photosensor element and to shift said intensity information along said shift register; said means for driving applying first and second signals to all said first and second electrodes, respectively; said means for driving providing isolation between adjacent said photosensor elements by applying differential voltages to adjacent first and second electrodes to develop a differential potential between said adjacent photosensor elements; said photosensor elements being solely isolated by said differential potential developed by said means for driving.

Claim 3

The sensor of claim 1 wherein each first electrode is a transfer register electrode; said means for driving transfers said light intensity information from a said photosensor element to said corresponding one of said plurality of CCD register elements by applying a first voltage to a said transfer register electrode associated with said corresponding one of said CCD register elements while applying a voltage lower than said first voltage to a said second electrode adjacent to said transfer register electrode.

Claim 4

The sensor of claim 2 wherein said means for driving alternately applies second and third voltages to said register electrodes of said CCD shift register to transfer said light intensity information along said CCD shift register means, said second voltage being an intermediate voltage lower than said first voltage and higher than said third voltage.

Claim 5

An interline transfer CCD (charge coupled device) image sensor comprising: a CCD shift register including a plurality of CCD register elements, said CCD shift register being formed of a continuous diffusion layer semiconductor buried channel of a single semiconductor conductivity type formed in a substrate of an opposite conductivity type; a plurality of PN junction photosensor elements aligned along said CCD shift register, each one of said plurality of PN junction photosensor elements being associated with a corresponding one of said plurality of CCD register elements to form a sensor unit; a transfer gate interposed between said each one of said plurality of PN junction photosensor elements and said corresponding one of said plurality of CCD register elements in said sensor unit; said corresponding one of said plurality of CCD register elements including, a portion of said continuous diffusion layer semiconductor buried channel, and register electrode means formed on said semiconductor channel for performing a shift operation in said CCD shift register, said register electrode means being extended toward said one of said plurality of PN junction photosensor elements to cover said transfer gate and reach the edge of said one of said plurality of PN junction photosensor elements including in said sensor unit, said register element including two electrodes associated with each said photosensor element; and means for driving said register electrode means to transfer light intensity information from a said photosensor element to said corresponding one of said plurality of CCD register elements by applying a first voltage to a transfer register electrode of said register electrodes associated with said corresponding one of said CCD register elements while applying a voltage lower than said first voltage to said register electrodes adjacent to said transfer register electrode; said means for driving alternately applying second and third voltages to said register electrodes of said CCD shift register to transfer said light intensity information along said CCD shift register means, said second voltage being an intermediate voltage lower than said first voltage and higher than said third voltage; said means for driving applying said second voltage to said register electrodes adjacent said transfer register electrode to enhance transfer efficiency by enlarging the potential well created by application of said first voltage to said transfer register electrode.

Claim 6

An interline transfer CCD (charge coupled device) image sensor comprising: a CCD shift register including a plurality of CCD register elements, said CCD shift register being formed of a continuous diffusion layer semiconductor buried channel of a single semiconductor conductivity type formed in a substrate of an opposite conductivity type; a plurality of PN junction photosensor elements aligned along said CCD shift register, each one of said plurality of PN junction photosensor elements being associated with a corresponding one of said plurality of CCD register elements to form a sensor unit; a transfer gate interposed between said each one of said plurality of PN junction photosensor elements and said corresponding one of said plurality of CCD register elements in said sensor unit; said corresponding one of said plurality of CCD register elements including, a portion of said continuous diffusion layer semiconductor buried channel, and register electrode means formed on said semiconductor channel for performing a shift operation in said CCD shift register, said register electrode means being extended toward said one of said plurality of PN junction photosensor elements to cover said transfer gate and reach the edge of said one of said plurality of PN junction photosensor elements including in said sensor unit, said register element including two electrodes associated with each said photosensor element; and means for driving said register electrode means to transfer light intensity information from a said photosensor element to said corresponding one of said plurality of CCD register elements by applying a first voltage to a transfer register electrode of said register electrodes associated with said corresponding one of said CCD register elements while applying a voltage lower than said first voltage to said register electrodes adjacent to said transfer register electrode; said means for driving alternately applying second and third voltages to said register electrodes of said CCD shift register to transfer said light intensity information along said CCD shift register means, said second voltage being an intermediate voltage lower than said first voltage and higher than said third voltage; said means for driving applying said second voltage to said register electrodes adjacent said transfer register electrode to enhance transfer efficiency by enlarging the potential well created by application of said first voltage to said transfer register electrode.

Claim 7

The sensor of claim 4 wherein said means for driving further defines said potential well by applying said third voltage to said register electrodes opposite the adjacent said register electrodes from said transfer register electrode.