US4934826A
Expired / Lapsed
US
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Block partitioned dynamic semiconductor memory device
Assignee: Mitsubishi Electric Corp
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Filing: 1988-06-24
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Granted: 1990-06-19
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Expires: 2008-06-24
Abstract
Abstract A word line driving signal generating circuit and a sense amplifier activating signal generating circuit are provided for every partitioned memory cell array. When the levels of an external RAS signal and an external CAS signal have a predetermined relation and an external RNC signal remains at a predetermined potential or more, a refresh operation is started. A refresh address is generated from a refresh address counter in a sense restore control circuit. All of the memory cell arrays are simultaneously refreshed in response to the address. On this occasion, an operation for selecting a column by a column decoder provided in each of the memory cell arrays is inhibited. In the case in which an input of the external RNC signal is not prepared, when the levels of the external RAS signal and the external CAS signal have a predetermined relation and this state is held in a predetermined time period or more, the same refresh operation as described above is started.
Inventors
- 👤 Hideshi Miyatake
- 👤 Hiroyuki Yamasaki
- 👤 Masaki Shimoda
- 👤 Kazuhiro Tsukamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:29
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/406; G11C11/408
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
90 words
A dynamic semiconductor memory device which can perform an access operation for all memory cell arrays therein, comprising: a plurality of partitioned memory cell arrays each having matrices of memory cells arranged therein, a plurality of refresh means with a refresh means provided in each of said memory cell arrays for refreshing said memory cells, mode defining means for defining a normal access mode and a refresh mode, and refresh control means for simultaneously activating all of said refresh means in the refresh mode defined by said mode defining means.
Claim 2
Dependent Claim
90 words
A dynamic semiconductor memory device which can perform an access operation for all memory cell arrays therein, comprising: a plurality of partitioned memory cell arrays each having matrices of memory cells arranged therein, a plurality of refresh means with a refresh means provided in each of said memory cell arrays for refreshing said memory cells, mode defining means for defining a normal access mode and a refresh mode, and refresh control means for simultaneously activating all of said refresh means in the refresh mode defined by said mode defining means.
Claim 3
Dependent Claim
39 words
A dynamic semiconductor memory device according to claim 1, wherein said mode defining means is responsive to the level of a refresh signal generated by a refresh signal generating means for defining said access mode and said refresh mode.
Claim 4
Dependent Claim
46 words
A dynamic semiconductor memory device according to claim 1, wherein said mode defining means comprises refresh signal generating means for generating a refresh signal, and is responsive to the level of the refresh signal generated by said refresh signal generating means for defining said refresh mode.
Claim 5
Dependent Claim
197 words
A dynamic semiconductor memory device which can perform an access operation for all memory cell arrays therein, comprising: a plurality of partitioned memory cell arrays each having a plurality of memory cells arranged in a plurality of rows and columns, a plurality of row selecting means each provided in each of said memory cell arrays for selecting the memory cells in every designated row, a plurality of column selecting means each provided in each of said memory cell arrays for selecting the memory cells in each designated column, mode defining means for defining a normal access mode and a refresh mode, matrix selecting control means for designating a row of the memory cells selected by said column selecting means and not designating a column of the memory cells selected by said row selecting means, in the refresh mode defined by said mode defining means, a plurality of refresh means with a refresh means provided in each of said memory cell arrays for refreshing the memory cells in the column selected by said column selecting means, and refresh control means for simultaneously activating all of said refresh means in the refresh mode defined by said mode defining means.
Claim 6
Dependent Claim
197 words
A dynamic semiconductor memory device which can perform an access operation for all memory cell arrays therein, comprising: a plurality of partitioned memory cell arrays each having a plurality of memory cells arranged in a plurality of rows and columns, a plurality of row selecting means each provided in each of said memory cell arrays for selecting the memory cells in every designated row, a plurality of column selecting means each provided in each of said memory cell arrays for selecting the memory cells in each designated column, mode defining means for defining a normal access mode and a refresh mode, matrix selecting control means for designating a row of the memory cells selected by said column selecting means and not designating a column of the memory cells selected by said row selecting means, in the refresh mode defined by said mode defining means, a plurality of refresh means with a refresh means provided in each of said memory cell arrays for refreshing the memory cells in the column selected by said column selecting means, and refresh control means for simultaneously activating all of said refresh means in the refresh mode defined by said mode defining means.
Claim 7
Dependent Claim
46 words
A dynamic semiconductor memory device according to claim 4, wherein said matrix selecting control means designates the row and the column of the memory cells selected by said row selecting means and said column selecting means, in the access mode defined by said mode defining means.
Claim 8
Dependent Claim
39 words
A dynamic semiconductor memory device according to claim 4, wherein said mode defining means is responsive to the level of a refresh signal generated by a refresh signal generating means for defining said access mode and said refresh mode.
Claim 9
Dependent Claim
46 words
A dynamic semiconductor memory device according to claim 4, wherein said mode defining means comprises refresh signal generating means for generating the refresh signal, and is responsive to the level of the refresh signal generated by said refresh signal generating means for defining said refresh mode.
Claim 10
Dependent Claim
132 words
A dynamic semiconductor memory device according to claim 7, wherein said refresh signal generating means comprises first signal generating means for generating a first signal for determining timing of accepting a signal which designates the row of the memory cells selected by said row selecting means in the access mode defined by said mode defining means, and second signal generating means for generating a second signal for determining timing of accepting a signal which designates the column of the memory cells selected by said column selecting means in the access mode defined by said mode defining means, said refresh signal generating means generating said refresh signal when the first signal generated by said first signal generating means and the second signal generated by said second signal generating means have a predetermined relation.
Claim 11
Dependent Claim
81 words
A dynamic semiconductor memory device according to claim 4, which further comprises refresh detecting means for detecting termination of a refresh operation of the memory cells for every one column by said refresh means, said matrix selecting control means comprising refresh address generating means for generating rows of memory cells to be refreshed in order, and designating successively the rows of the memory cells generated by said refresh address generating means in response to detecting output from said refresh detecting means.
References Cited (Backward Citations)
US3737879A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-18 | 1993-12-18 | 1994-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-18 | 1997-12-18 | 1998-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-18 | 2001-12-18 | 2002-06-19 | $7700.00 | Window Closed / Lapsed |