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Patent US4933255A successfully refreshed from Google Patents.
US4933255A
Expired / Lapsed
US
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Method of fabricating an electrophotographic photosensor
Assignee: Komatsu Ltd
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Filing: 1989-05-08
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Granted: 1990-06-12
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Expires: 2009-05-08
Abstract
Abstract In an electro-photographic photosensor wherein amorphous silicon as a photoconductive layer is formed on the surface of an aluminum base which has been processed to be alumite layer consisting of a porous layer and barrier layer, amorphous silicon is formed directly on the surface of the porous layer in which porosities is remained by the elimination of the process of sealing porosities. Further, when aluminum is processed by electrolyzation to be alumite, thickness of the barrier layer and the porous layer are appropriately set to provide good adhesive strength of amorphous silicon to the aluminum base and good electrostatic characteristics by adjusting respectively a voltage and duration of the electrolyzation.
Inventors
- 👤 Yasuhiko Hata
- 👤 Hiroyuki Mizukami
- 👤 Toshio Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:57
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/10; G03G5/104; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/102; G03G5/14; G03G5/142
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
99 words
A method of fabricating an electro-photographic photosensor in which amorphous silicon as a photoconductive layer is formed on a surface of an aluminum base comprising the steps of: forming an alumite layer which comprises a barrier layer having a thickness α and a porous layer having a thickness β on the surface of said aluminum base by an alumite process such that the thickness α and β fall within the respective ranges of: 10 Å≦α≦500 Å, 1 μm≦β≦3 μm; and forming a single photoconductive layer consisting of amorphous silicon only and directly on the surface of said porous layer.
Claim 2
Independent Claim
99 words
A method of fabricating an electro-photographic photosensor in which amorphous silicon as a photoconductive layer is formed on a surface of an aluminum base comprising the steps of: forming an alumite layer which comprises a barrier layer having a thickness α and a porous layer having a thickness β on the surface of said aluminum base by an alumite process such that the thickness α and β fall within the respective ranges of: 10 Å≦α≦500 Å, 1 μm≦β≦3 μm; and forming a single photoconductive layer consisting of amorphous silicon only and directly on the surface of said porous layer.
Claim 3
Independent Claim
99 words
A method of fabricating an electro-photographic photosensor in which amorphous silicon as a photoconductive layer is formed on a surface of an aluminum base comprising the steps of: forming an alumite layer which comprises a barrier layer having a thickness α and a porous layer having a thickness β on the surface of said aluminum base by an alumite process such that the thicknesses α and β fall within the respective ranges of: 10 Å≦α≦200 Å 1 μm≦β≦5 μm; and forming a single photoconductive layer consisting of amorphous silicon only and directly on the surface of said porous layer.
Claim 4
Independent Claim
99 words
A method of fabricating an electro-photographic photosensor in which amorphous silicon as a photoconductive layer is formed on a surface of an aluminum base comprising the steps of: forming an alumite layer which comprises a barrier layer having a thickness α and a porous layer having a thickness β on the surface of said aluminum base by an alumite process such that the thicknesses α and β fall within the respective ranges of: 10 Å≦α≦200 Å 1 μm≦β≦5 μm; and forming a single photoconductive layer consisting of amorphous silicon only and directly on the surface of said porous layer.
References Cited (Backward Citations)
US3615405A
Cited
DE2430115A1
Cited
GB1446111A
Cited
US4403026A
Cited
US4416962A
Cited
JPS585749A
Cited
JPS59157652A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-11 | 1993-12-11 | 1994-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-11 | 1997-12-11 | 1998-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-11 | 2001-12-11 | 2002-06-12 | $7700.00 | Window Closed / Lapsed |