US4931136A
Expired / Lapsed
US
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Method and apparatus for manufacturing a metal contact with overhanging edges
Assignee: Siemens AG
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Filing: 1989-08-07
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Granted: 1990-06-05
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Expires: 2009-08-07
Abstract
Abstract This invention relates to a method and apparatus for manufacturing a metal contact with overhanging upper edges. The metal contact has at least one specific layer tapering away from the surface of a semiconductor layer structure. The metal contact is formed by RIE and mask technology, in which a concavely formed equipotential boundary surface is formed between an anode and a cathode. In a preferred embodiment, the curvature is achieved by selecting the effective areas of the cathode and anode so that their rate is no greater than 3:4.
Inventors
- 👤 Thomas Pausch
- 👤 Josef Willer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
126 words
In a method for the manufacture of a metal contact having overhanging upper edges, said metal contact being situated on a semiconductor layer structure on a substrate, wherein said metal contact comprises at least one specific metal layer of uniform composition tapering toward the surface of the semiconductor layer structure, wherein the overhanging of the upper edges of said metal contact is effected by the taper of the specific metal layer, the improvement comprising: forming said metal contact by reactive ion etching (RIE) and mask technology in which said substrate is applied on a cathode and; effecting RIE such that an equipotential surface forms a boundary between a positive column and a dark field zone, said equipotential surface being concavely curved with respect to said substrate.
Claim 2
Dependent Claim
126 words
In a method for the manufacture of a metal contact having overhanging upper edges, said metal contact being situated on a semiconductor layer structure on a substrate, wherein said metal contact comprises at least one specific metal layer of uniform composition tapering toward the surface of the semiconductor layer structure, wherein the overhanging of the upper edges of said metal contact is effected by the taper of the specific metal layer, the improvement comprising: forming said metal contact by reactive ion etching (RIE) and mask technology in which said substrate is applied on a cathode and; effecting RIE such that an equipotential surface forms a boundary between a positive column and a dark field zone, said equipotential surface being concavely curved with respect to said substrate.
Claim 3
Dependent Claim
32 words
The improvement of claim 1, wherein RIE is effected under a process pressure that amounts to at most 10 μbar, and a power density amounts to at least 0.5 W/cm 2 .
Claim 4
Independent Claim
90 words
An apparatus for effecting reactive ion etching in the manufacture of a metal contact situated on a semiconductor layer structure on a substrate, said apparatus comprising: a cathode having a surface for the acceptance of said substrate; an anode spaced from said cathode and connected to a voltage supply; wherein the spacing between the cathode and the anode is at least 4 cm, and; wherein the ratio of the dimension that defines the size of the effective area of the cathode to that of the anode is at most 3:4.
Claim 5
Independent Claim
90 words
An apparatus for effecting reactive ion etching in the manufacture of a metal contact situated on a semiconductor layer structure on a substrate, said apparatus comprising: a cathode having a surface for the acceptance of said substrate; an anode spaced from said cathode and connected to a voltage supply; wherein the spacing between the cathode and the anode is at least 4 cm, and; wherein the ratio of the dimension that defines the size of the effective area of the cathode to that of the anode is at most 3:4.
Claim 6
Dependent Claim
26 words
The apparatus of claim 3, wherein the effective areas of cathode (5) and anode (6) are circular and the dimensions defining their sizes are their diameters.
Claim 7
Dependent Claim
48 words
In a method for performing reactive ion etching, the steps comprising: providing a cathode and an anode each having a dimension defining the size of its effective area; and selecting said dimensions such that the ratio of the cathode dimension to the anode dimension is at most 3:4.
Claim 8
Dependent Claim
48 words
In a method for performing reactive ion etching, the steps comprising: providing a cathode and an anode each having a dimension defining the size of its effective area; and selecting said dimensions such that the ratio of the cathode dimension to the anode dimension is at most 3:4.
Claim 9
Dependent Claim
11 words
The method of claim 5, further wherein said dimensions are diameters.
Claim 10
Independent Claim
47 words
An apparatus for manufacturing metal contacts situated on a substrate, said apparatus comprising: means for performing reactive ion etching, and; means for forming an equipotential surface facing said substrate during said reactive ion etching such that said equipotential surface is concavely curved with respect to said substrate.
Claim 11
Independent Claim
47 words
An apparatus for manufacturing metal contacts situated on a substrate, said apparatus comprising: means for performing reactive ion etching, and; means for forming an equipotential surface facing said substrate during said reactive ion etching such that said equipotential surface is concavely curved with respect to said substrate.
Claim 12
Dependent Claim
49 words
The apparatus of claim 7, further wherein said means for forming an equipotential surface comprises: a cathode having a dimension defining its effective area; an anode having a dimension defining its effective area; wherein the ratio of said cathode dimension to said anode dimension is no greater than 3:4.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-04 | 1993-12-04 | 1994-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-04 | 1997-12-04 | 1998-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-04 | 2001-12-04 | 2002-06-05 | $7700.00 | Window Closed / Lapsed |