US4924212A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Temperature threshold detection circuit
Assignee: STMicroelectronics SA
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Filing: 1988-08-23
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Granted: 1990-05-08
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Expires: 2008-08-23
Abstract
Abstract A threshold temperature detection is made by measuring the reverse saturation current of a transistor subjected to the temperature to be measured. It is shown that, for temperatures close to the ambient temperature, the sensitivity of this detector is very high. Furthermore, in making a circuit that measures the relative variations of the reverse saturation current, a temperature detector is made which is independent of variations in characteristics resulting from manufacturng tolerances for integrated circuits. This circuit is particularly designed to be implanted in the same substrate as a memory circuit of the type with memory cells, provided with floating gate transistors.
Inventors
- 👤 Serge Fruhauf
- 👤 Eric Mattera
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:56
CPC Classifications
G; G01; G01K; G01K3/00; G01K3/005; G01K7/00; G01K7/01
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
72 words
A temperature threshold detection circuit comprising at least one transistor, reverse biased by an electrical supply circuit, and means for measuring the reverse saturation current which flows through this transistor, wherein the measuring means comprise a second transistor in series with the first transistor and reverse biased by the supply, having a size different from that of the first transistor, and a threshold comparator connected to the mid-point of these two transistors.
Claim 2
Dependent Claim
72 words
A temperature threshold detection circuit comprising at least one transistor, reverse biased by an electrical supply circuit, and means for measuring the reverse saturation current which flows through this transistor, wherein the measuring means comprise a second transistor in series with the first transistor and reverse biased by the supply, having a size different from that of the first transistor, and a threshold comparator connected to the mid-point of these two transistors.
Claim 3
Dependent Claim
20 words
A circuit according to claim 1 integrated into the substrate of an integrated circuit to provide for its thermal monitoring.
Claim 4
Dependent Claim
14 words
A circuit according to claim 2 wherein the two channels have identical conduction channels.
Claim 5
Dependent Claim
38 words
A circuit according to claim 2 wherein one of the transistors is a P channel transistor, made in a P dope substrate and contained in a pad which is electrically connected to the source potential of this transistor.
Claim 6
Dependent Claim
14 words
A circuit according to claim 1 wherein the two channels have identical conduction channels.
Claim 7
Dependent Claim
38 words
A circuit according to claim 1 wherein one of the transistors is a P channel transistor, made in a P doped substrate and contained in a pad which is electrically connected to the source potential of this transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-07 | 1993-11-06 | 1994-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-07 | 1997-11-06 | 1998-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-07 | 2001-11-06 | 2002-05-08 | $7700.00 | Window Closed / Lapsed |