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US4923773A
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Multilayered electrophotographic photoreceptor of amorphous silicon having a surface layer of nitrogenated amorphous silicon
Assignee: Fujifilm Business Innovation Corp
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Filing: 1988-10-18
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Granted: 1990-05-08
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Expires: 2008-10-18
Abstract
Abstract An electrophotographic photoreceptor comprising a support, a charge blocking layer, a first photoconductive layer composed of at least amorphous silicon, a second photoconductive layer composed of at least boron-containing amorphous silicon, a surface layer composed of at least nitrogenated amorphous silicon, the surface layer having an interface for contacting the second photoconductive layer, the surface layer including a lower region corresponding to an area not greater than approximately 100 Å away from the interface, the lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, the nitrogen ratio of the lower region and the boron content of the second photoconductive layer corresponding to the relation B≧10.sup.(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.
Inventors
- 👤 Shigeru Yagi
- 👤 Masato Ono
- 👤 Noriyoshi Takahashi
- 👤 Masayuki Nishikawa
- 👤 Yuzuru Fukuda
- 👤 Kenichi Karakida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:41
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
134 words
An electrophotographic photoreceptor comprising: a support; a charge blocking layer; a first photoconductive layer composed of at least amorphous silicon; a second photoconductive layer composed of at least boron-containing amorphous silicon; surface layer composed of at least nitrogenated amorphous silicon, said surface layer having an interface for contacting said second photoconductive layer, said surface layer including a lower region corresponding to an area not greater than approximately 100 Å away from said interface, said lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, said nitrogen ratio of said lower region and the boron content of said second photoconductive layer corresponding to the relation B≧10(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.
Claim 2
Dependent Claim
134 words
An electrophotographic photoreceptor comprising: a support; a charge blocking layer; a first photoconductive layer composed of at least amorphous silicon; a second photoconductive layer composed of at least boron-containing amorphous silicon; surface layer composed of at least nitrogenated amorphous silicon, said surface layer having an interface for contacting said second photoconductive layer, said surface layer including a lower region corresponding to an area not greater than approximately 100 Å away from said interface, said lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, said nitrogen ratio of said lower region and the boron content of said second photoconductive layer corresponding to the relation B≧10(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.
Claim 3
Dependent Claim
16 words
An electrophotographic photoreceptor as set forth in claim 1, wherein said support is made of metal.
Claim 4
Dependent Claim
21 words
An electrophotographic photoreceptor as set forth in claim 1, wherein said support is electrically insulative support having an electrically conductive surface.
Claim 5
Dependent Claim
39 words
An electrophotographic photoreceptor as set forth in claim 1, wherein said charge blocking layer overlays said support and includes amorphous silicon containing between 50 and 5000 ppm boron and has a thickness of between 0.5 μm and 10 μm.
Claim 6
Dependent Claim
34 words
An electrophotographic photoreceptor as set forth in claim 1, wherein said first photoconductive layer overlays said charge blocking layer and has a thickness approximately within the range of about 1 μm to 100 μm.
Claim 7
Dependent Claim
18 words
An electrophotographic photoreceptor as set forth in claim 5, wherein said first photoconductive layer contains a doping element.
Claim 8
Dependent Claim
32 words
An electrophotographic photoreceptor as set forth in claim 6, wherein said doping element is boron, the proportion of said boron doping element being approximately within the range of 0 to 3 ppm.
Claim 9
Dependent Claim
53 words
An electrophotographic photoreceptor as set forth in claim 1, wherein said second photoconductive layer overlays said first photoconductive layer and the boron content of said boron-containing amorphous silicon of said second photoconductive layer is greater than 3 ppm, said second photoconductive layer having an approximate thickness of about 0.1 μm to 10 μm.
Claim 10
Dependent Claim
35 words
An electrophotographic photoreceptor as set forth in claim 8, wherein said boron content of said boron containing amorphous silicon of said second photoconductive layer is within the range of approximately 5 ppm to 400 ppm.
Claim 11
Dependent Claim
28 words
An electrophotographic photoreceptor as set forth in claim 1, wherein said surface layer has a nitrogen content of at least about 0.5 parts nitrogen to 1 part silicon.
Claim 12
Dependent Claim
26 words
An electrophotographic photoreceptor as set forth in claim 10, wherein said surface layer including said lower region is a monolayered structure wherein nitrogen is uniform throughout.
Claim 13
Dependent Claim
18 words
An electrophotographic photoreceptor as set forth in claim 10, wherein nitrogen concentration is gradient within said surface layer.
Claim 14
Dependent Claim
35 words
An electrophotographic photoreceptor as set forth in claim 1, wherein said charge blocking layer, said first photoconductive layer, said second photoconductive layer and said surface layer are each formed by a method of glow-discharge decomposition.
Claim 15
Dependent Claim
233 words
An electrophotographic photoreceptor comprising: a support; a charge blocking layer; a first photoconductive layer composed of at least amorphous silicon; a second photoconductive layer composed of at least boron containing amorphous silicon; and a surface layer composed of at least nitrogenated amorphous silicon, said surface layer having an interface for contacting said second photoconductive layer, said surface layer having a lower region corresponding to an area not greater than 100 Å from said interface; said charge blocking layer overlaying said support, having an approximate thickness between 0.5 μm and 10 μm and being composed of amorphous silicon containing between 50 and 100 ppm boron; said first photoconductive layer having an approximate thickness of between 1 μm to 10 μm, overlaying said charge blocking layer and further including at least one doping element, said at least one doping element having between 0 and 3 ppm of boron; said second photoconductive layer having an approximate thickness of between 0.1 μm and 10 μm, overlaying said first photoconductive layer and having a boron content of between 5 and 400 ppm; said lower region of said surface layer having 0.5 parts nitrogen atoms for each part silicon, said nitrogen content of said lower region and the boron content of said second photoconductive layer corresponding to the relation B≧10(9N-5.5) where B is the boron content of PPM, and N is the ratio of nitrogen atoms to silicon atoms.
Claim 16
Dependent Claim
233 words
An electrophotographic photoreceptor comprising: a support; a charge blocking layer; a first photoconductive layer composed of at least amorphous silicon; a second photoconductive layer composed of at least boron containing amorphous silicon; and a surface layer composed of at least nitrogenated amorphous silicon, said surface layer having an interface for contacting said second photoconductive layer, said surface layer having a lower region corresponding to an area not greater than 100 Å from said interface; said charge blocking layer overlaying said support, having an approximate thickness between 0.5 μm and 10 μm and being composed of amorphous silicon containing between 50 and 100 ppm boron; said first photoconductive layer having an approximate thickness of between 1 μm to 10 μm, overlaying said charge blocking layer and further including at least one doping element, said at least one doping element having between 0 and 3 ppm of boron; said second photoconductive layer having an approximate thickness of between 0.1 μm and 10 μm, overlaying said first photoconductive layer and having a boron content of between 5 and 400 ppm; said lower region of said surface layer having 0.5 parts nitrogen atoms for each part silicon, said nitrogen content of said lower region and the boron content of said second photoconductive layer corresponding to the relation B≧10(9N-5.5) where B is the boron content of PPM, and N is the ratio of nitrogen atoms to silicon atoms.
Claim 17
Dependent Claim
70 words
An electrophotographic photoreceptor as set forth in claim 14, wherein said charge blocking layer, said first photoconductive layer, and said second photoconductive layer are each formed through a method of glow discharge decomposition, said method of glow discharge decomposition including the step of introducing a raw-material gas into an apparatus of plasma CVD and a support, said raw-material gas including a quantity of diborane gas and a silane gas derivative.
Claim 18
Dependent Claim
54 words
An electrophotographic photoreceptor as set forth in claim 15, wherein said silane gas derivative comprises at least one of SiH 4 , Si 2 H 6 , SiCl 4 , SiHCL 3 , SiH 2 Cl 2 , Si(CH 3 ) 4 , Si 3 H 8 , and Si 4 H 10 .
Claim 19
Dependent Claim
22 words
An electrophotographic photoreceptor as set forth in claim 15, wherein hydrogen gas is introduced into said apparatus with said silane gas derivative.
Claim 20
Dependent Claim
54 words
An electrophotographic photoreceptor as set forth in claim 14, wherein said surface layer is formed through a method of glow-discharge decomposition, said method of glow-discharge decomposition including the step of introducing a raw-material gas into an apparatus of plasma CVD and a support, said raw-material gas including a silane gas and an ammonia gas.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-05-07 | 1993-11-06 | 1994-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-07 | 1997-11-06 | 1998-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-07 | 2001-11-06 | 2002-05-08 | $7700.00 | Window Closed / Lapsed |