CMOS level converter circuit with reduced power consumption

Claim 2

A level converter circuit comprising: a first MOS transistor of one conductivity type connected between a first potential power line receiving a first potential of a first polarity and a first node and having a gate receiving a first signal having an amplitude between said first potential and a ground potential, a second MOS transistor of said one conductivity type connected between said first potential power line and a second node and having a gate receiving a second signal having an opposite phase to said first signal, a third MOS transistor of an opposite conductivity type connected between said first node and a second potential power line receiving a second potential of a second polarity opposite to said first polarity and having a gate coupled to said second node, a fourth MOS transistor of said opposite conductivity type connected between said second potential power line and said second node and having a gate coupled to said first node, a fifth MOS transistor of said opposite conductivity type connected between said second potential power line and a third node and having a gate coupled to said second node, and a sixth MOS transistor of said one conductivity type connected between a ground potential line receiving said ground potential and said third node and having a gate coupled to said second node, wherein a third signal obtained by converting said first signal and having an amplitude between said second potential and said ground potential is generated from said third node.

Claim 3

A level converter circuit as defined in claim 1, wherein said first and second polarities are a negative polarity and a positive polarity, respectively, and said first, second and sixth MOS transistors are N-channel type MOS transistors while said third, fourth and fifth MOS transistors are P-channel type MOS transistors.

Claim 4

A level converter circuit as defined in claim 1, wherein said first and second polarities are a positive polarity and a negative polarity, respectively, and said first, second and sixth MOS transistors are P-channel type MOS transistors while said third, fourth and fifth MOS transistors are N-channel type MOS transistors.

Claim 5

A level converter circuit comprising: a first MOS transistor of one conductivity type connected between a first potential power line receiving a first potential of a first polarity and a first node and having a gate receiving a first signal having an amplitude between said first potential and a ground potential, a second MOS transistor of said one conductivity type connected between said first potential power line and a second node and having a gate receiving a second signal having an opposite phase to said first signal, a third MOS transistor of an opposite conductivity type connected between said first node and a second potential power line receiving a second potential of a second polarity opposite to said first polarity and having a gate coupled to said second node, and a fourth MOS transistor of said opposite conductivity type connected between said second potential power line and said second node and having a gate coupled to said first node, wherein a third signal obtained by converting said first signal is generated from said second node, and wherein each of said first and second MOS transistors is a series circuit of a plurality of MOS transistors of said one conductivity type operating as a single equivalent MOS transistor, and each of said third and fourth MOS transistors is a series circuit of a plurality of MOS transistors of said opposite conductivity type operating as a single equivalent transistor.

Claim 6

A level converter circuit comprising: a first MOS transistor of one conductivity type connected between a first potential power line receiving a first potential of a first polarity and a first node and having a gate receiving a first signal having an amplitude between said first potential and a ground potential, a second MOS transistor of said one conductivity type connected between said first potential power line and a second node and having a gate receiving a second signal having an opposite phase to said first signal, a third MOS transistor of an opposite conductivity type connected between said first node and a second potential power line receiving a second potential of a second polarity opposite to said first polarity and having a gate coupled to said second node, and a fourth MOS transistor of said opposite conductivity type connected between said second potential power line and said second node and having a gate coupled to said first node, wherein a third signal obtained by converting said first signal is generated from said second node, and wherein each of said first and second MOS transistors is a series circuit of a plurality of MOS transistors of said one conductivity type operating as a single equivalent MOS transistor, and each of said third and fourth MOS transistors is a series circuit of a plurality of MOS transistors of said opposite conductivity type operating as a single equivalent transistor.

Claim 7

A level converter circuit comprising: a first logic circuit connected between a first potential power line receiving a first potential of a first plurality and a ground potential line, a first MOS transistor of one conductivity type connected between said first potential power line and a first node and having a gate receiving an output signal of said first logic circuit, an inverter circuit inverting a phase of said output signal of said first logic circuit, a second MOS transistor of said one conductivity type connected between said first potential power line and a second node and having a gate receiving an output signal of said inverter circuit, a third MOS transistor of an opposite conductivity type connected between said first node and a second potential power line receiving a second potential of a second polarity opposite to said first polarity and having a gate coupled to said second node, a fourth MOS transistor of said opposite conductivity type connected between said second potential power line and said second node and having a gate coupled to said first node, a fifth MOS transistor of said opposite conductivity type connected between said second potential power line and a third node and having a gate coupled to said second node, a sixth MOS transistor of said one conductivity type connected between said ground potential line and said third node and having a gate coupled to said second node, and a second logic circuit connected between said second potential power line and said ground potential line and receiving a signal at said third node.

Claim 8

A level converter circuit comprising: a first logic circuit connected between a first potential power line receiving a first potential of a first plurality and a ground potential line, a first MOS transistor of one conductivity type connected between said first potential power line and a first node and having a gate receiving an output signal of said first logic circuit, an inverter circuit inverting a phase of said output signal of said first logic circuit, a second MOS transistor of said one conductivity type connected between said first potential power line and a second node and having a gate receiving an output signal of said inverter circuit, a third MOS transistor of an opposite conductivity type connected between said first node and a second potential power line receiving a second potential of a second polarity opposite to said first polarity and having a gate coupled to said second node, a fourth MOS transistor of said opposite conductivity type connected between said second potential power line and said second node and having a gate coupled to said first node, a fifth MOS transistor of said opposite conductivity type connected between said second potential power line and a third node and having a gate coupled to said second node, a sixth MOS transistor of said one conductivity type connected between said ground potential line and said third node and having a gate coupled to said second node, and a second logic circuit connected between said second potential power line and said ground potential line and receiving a signal at said third node.

Claim 9

A level converter circuit as defined in claim 5, wherein said first logic circuit is an ECL-type circuit, said second logic circuit is a TTL-type circuit, said first and second polarities are negative and positive polarities, respectively, said first, second and sixth MOS transistors are N-channel type MOS transistors, and said third, fourth and fifth MOS transistors are P-channel type MOS transistors.

Claim 10

A level converter circuit as defined in claim 5, wherein said first logic circuit is a TTL-type circuit, said second logic circuit is an ECL-type circuit, said first and second polarities are positive and negative polarities, respectively, said first, second and sixth MOS transistors are P-channel type MOS transistors, and said third, fourth and fifth MOS transistors are N-channel type MOS transistors.

Claim 11

A level converter circuit comprising: a first series circuit of plural number of MOS transistors of one conductivity type having gates connected in common to receive a first signal having a potential level swing between a first potential in a first polarity and a ground potential, said first series circuit being connected between a first power line held at said first potential and a first node, a second series circuit of plural number of MOS transistors of one conductivity type having gates connected in common to receive a second signal having a phase opposite to said first signal, said second series circuit being connected between said first power line and a second node, a third series circuit of plural number of MOS transistors of opposite conductivity type having gates connected in common to said second node, said third series circuit being connected between said first node and a second power line held at said second potential opposite to said first polarity, and a fourth series circuit of plural number of MOS transistors of said opposite conductivity type having gates connected in common to said first node, said fourth series circuit being connected between said second power line and said second node, whereby said second node produces a third signal obtained by converting said first signal.

Claim 12

A level converter circuit comprising: a first series circuit of plural number of MOS transistors of one conductivity type having gates connected in common to receive a first signal having a potential level swing between a first potential in a first polarity and a ground potential, said first series circuit being connected between a first power line held at said first potential and a first node, a second series circuit of plural number of MOS transistors of one conductivity type having gates connected in common to receive a second signal having a phase opposite to said first signal, said second series circuit being connected between said first power line and a second node, a third series circuit of plural number of MOS transistors of opposite conductivity type having gates connected in common to said second node, said third series circuit being connected between said first node and a second power line held at said second potential opposite to said first polarity, and a fourth series circuit of plural number of MOS transistors of said opposite conductivity type having gates connected in common to said first node, said fourth series circuit being connected between said second power line and said second node, whereby said second node produces a third signal obtained by converting said first signal.

Claim 13

A level converter circuit as defined in claim 8, wherein said first polarity is negative polarity, said second polarity is positive polarity, said first and second series circuits are respectively made of N-channel type MOS transistors, and said third and fourth series circuits are respectively made of P-channel type MOS transistors.

Claim 14

A level converter circuit as defined in claim 8, wherein said first polarity is positive polarity, said second polarity is negative polarity, said first and second series circuits are respectively made of P-channel type MOS transistors, and said third and fourth series circuits are respectively made of N-channel type MOS transistors.