US4919749A
Expired / Lapsed
US
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Method for making high resolution silicon shadow masks
Assignee: Nanostructures Inc
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Filing: 1989-05-26
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Granted: 1990-04-24
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Expires: 2009-05-26
Abstract
Abstract A high resolution shadow mask with low pattern distortion is formed from a silicon membrane with a pattern of apertures etched through the membrane by reactive ion etching using a silicon dioxide masking layer. To achieve low distortion over a large area membrane, the stress of the membrane and the masking layer is controlled to remain within an optimal range so that the stress relief that occurs when the apertures are formed is kept negligibly small. A silicon membrane with controlled stress is made using a p/n junction electrochemical etch-stop process. After making the membrane, it is then coated with a deposited silicon dioxide layer. The stress of the oxide layer may be adjusted to an optimum value by annealing after deposition. The membrane with the oxide mask layer is next coated with a photoresist layer which is then patterned with the desired shadow mask pattern. Once the photoresist is patterned, the pattern is then transferred into the oxide layer by reactive ion etching. The patterned oxide then serves as the mask for etching apertures through the silicon membrane, also done by reactive ion etching.
Inventors
- 👤 Philip E. Mauger
- 👤 Alex R. Shimkunas
- 👤 Junling J. Yen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:23
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/20; H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
116 words
A method of forming a silicon shadow mask having a pattern of etched through apertures comprising the steps of: (a) forming a silicon membrane having a selectively controlled predetermined stress characteristic and a thickness of less than approximately 25 microns; (b) applying a masking layer to an upper surface of said silicon membrane; (c) patterning said masking layer with a pattern corresponding to said pattern of etched through apertures; (d) etching away said masking layer in regions corresponding to said pattern of etched through apertures; (e) etching away said silicon membrane in said regions corresponding to said pattern of etched through apertures, thereby creating said etched through apertures; (f) removing remaining portions of said masking layer.
Claim 2
Independent Claim
116 words
A method of forming a silicon shadow mask having a pattern of etched through apertures comprising the steps of: (a) forming a silicon membrane having a selectively controlled predetermined stress characteristic and a thickness of less than approximately 25 microns; (b) applying a masking layer to an upper surface of said silicon membrane; (c) patterning said masking layer with a pattern corresponding to said pattern of etched through apertures; (d) etching away said masking layer in regions corresponding to said pattern of etched through apertures; (e) etching away said silicon membrane in said regions corresponding to said pattern of etched through apertures, thereby creating said etched through apertures; (f) removing remaining portions of said masking layer.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said masking layer is SiO 2 .
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein said SiO 2 masking layer is formed by chemical vapor deposition.
Claim 5
Dependent Claim
15 words
The method of claim 2 wherein said SiO 2 masking layer is deposited by evaporation.
Claim 6
Dependent Claim
15 words
The method of claim 2 wherein said SiO 2 masking layer is deposited by sputtering.
Claim 7
Dependent Claim
17 words
The method of claim 2 further comprising the step of thermal annealing said SiO 2 masking layer.
Claim 8
Dependent Claim
30 words
The method of claim 6 wherein said SiO 2 masking layer is thermally annealed to achieve an internal tensile stress value of less than approximately 1×10 8 dynes/cm 2 .
Claim 9
Dependent Claim
20 words
The method of claim 2 wherein said SiO 2 masking layer is etched away with a reactive ion etching process.
Claim 10
Dependent Claim
29 words
The method of claim 1 wherein said selectively controlled predetermined stress characteristic is an internal tensile stress value in the range of 0.5 to 3.0×10 8 dynes/cm 2 .
Claim 11
Dependent Claim
15 words
The method of claim 1 wherein said masking layer is patterned with a photoresist layer.
Claim 12
Dependent Claim
27 words
The method of claim 10 further comprising the step, after the step of etching away said masking layer, of removing said photoresist layer in an oxygen plasma.
Claim 13
Dependent Claim
18 words
The method of claim 1 wherein said silicon membrane is etched away with a reactive ion etching process.
Claim 14
Dependent Claim
15 words
The method of claim 12 wherein said reactive ion etching process employs a bromine plasma.
Claim 15
Dependent Claim
16 words
The method of claim 13 wherein said bromine plasma is derived from a liquid bromine solution.
Claim 16
Dependent Claim
15 words
The method of claim 13 wherein said bromine plasma is derived from hydrogen bromide gas.
Claim 17
Dependent Claim
15 words
The method of claim 12 wherein said reactive ion etching process employs a chlorine plasma.
Claim 18
Dependent Claim
21 words
The method of claim 1 further comprising the step of metallizing said silicon membrane in regions surrounding said etched through apertures.
Claim 19
Independent Claim
123 words
A method of forming a silicon shadow mask having a pattern of through apertures comprising the steps of: (a) forming a silicon membrane having internal tensile stress in the range of approximately 0.5 to 3.0×10 8 dynes/cm 2 ; (b) applying a SiO 2 masking layer to an upper surface of said silicon membrane: (c) thermal annealing said SiO 2 masking layer to achieve an internal tensile stress of less than approximately 1×10 8 dynes/cm 2 ; (d) removing said SiO 2 masking layer in regions corresponding to said pattern of through apertures; (e) removing said silicon membrane in said regions corresponding to said pattern of through apertures, thereby creating said through apertures; (f) removing remaining portions of said SiO 2 masking layer.
Claim 20
Independent Claim
123 words
A method of forming a silicon shadow mask having a pattern of through apertures comprising the steps of: (a) forming a silicon membrane having internal tensile stress in the range of approximately 0.5 to 3.0×10 8 dynes/cm 2 ; (b) applying a SiO 2 masking layer to an upper surface of said silicon membrane: (c) thermal annealing said SiO 2 masking layer to achieve an internal tensile stress of less than approximately 1×10 8 dynes/cm 2 ; (d) removing said SiO 2 masking layer in regions corresponding to said pattern of through apertures; (e) removing said silicon membrane in said regions corresponding to said pattern of through apertures, thereby creating said through apertures; (f) removing remaining portions of said SiO 2 masking layer.
Claim 21
Dependent Claim
17 words
The method of claim 18 wherein said SiO 2 masking layer is formed by chemical vapor deposition.
Claim 22
Dependent Claim
15 words
The method of claim 18 wherein said SiO 2 masking layer is deposited by evaporation.
Claim 23
Dependent Claim
15 words
The method of claim 18 wherein said SiO 2 masking layer is deposited by sputtering.
Claim 24
Dependent Claim
19 words
The method of claim 18 wherein said SiO 2 masking layer is removed with a reactive ion etching process.
Claim 25
Dependent Claim
17 words
The method of claim 18 wherein said silicon membrane is removed with a reactive ion etching process.
Claim 26
Dependent Claim
15 words
The method of claim 23 wherein said reactive ion etching process employs a bromine plasma.
Claim 27
Dependent Claim
16 words
The method of claim 24 wherein said bromine plasma is derived from a liquid bromine solution.
Claim 28
Dependent Claim
15 words
The method of claim 24 wherein said bromine plasma is derived from hydrogen bromide gas.
Claim 29
Dependent Claim
15 words
The method of claim 23 wherein said reactive ion etching process employs a chlorine plasma.
Claim 30
Dependent Claim
20 words
The method of claim 18 further comprising the step of metallizing said silicon membrane in regions surrounding said through apertures.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-04-23 | 1993-10-23 | 1994-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-23 | 1997-10-23 | 1998-04-24 | $3760.00 | Window Closed / Lapsed |
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