Multi-point emission type semiconductor laser device therefor

Claim 2

A multi-point light emission type semiconductor laser device including a plurality of light emission points which can be driven independently comprising: an electrically insulating or semi-insulating semiconductor region provided intermediate said light emission points ; and a separation groove extending from the side of the device opposite said region through said device to said region, electrically separating said respective light emission points from each other.

Claim 3

The semiconductor laser device of claim 1 wherein said semiconductor layer comprises GaAs.

Claim 4

A junction down mounted semiconductor laser device for junction down mounting including at least two separate light emission points comprising: at least two commonly formed, attached laser elements, each laser element including, serially disposed, a first electrode, a first semiconductor contacting layer of a first conductivity type, a first semiconductor cladding layer of the first conductivity type, an active semiconductor layer, a second semiconductor cladding layer of a second conductivity type, a semiconductor current blocking layer of the first conductivity type including an opening filled by part of said second cladding layer opposite a light emitting region of the element, a second semiconductor contacting layer of the second conductivity type and a second electrode wherein adjacent laser elements are attached to each other by an electrically isolating material disposed between said second contacting layers of adjacent laser elements, at least a portion of said second contacting layers being disposed on said isolating material, and are electrically separated from each other by a groove extending between said first and second contacting layers.

Claim 5

A junction down mounted semiconductor laser device for junction down mounting including at least two separate light emission points comprising: at least two commonly formed, attached laser elements, each laser element including, serially disposed, a first electrode, a first semiconductor contacting layer of a first conductivity type, a first semiconductor cladding layer of the first conductivity type, an active semiconductor layer, a second semiconductor cladding layer of a second conductivity type, a semiconductor current blocking layer of the first conductivity type including an opening filled by part of said second cladding layer opposite a light emitting region of the element, a second semiconductor contacting layer of the second conductivity type and a second electrode wherein adjacent laser elements are attached to each other by an electrically isolating material disposed between said second contacting layers of adjacent laser elements, at least a portion of said second contacting layers being disposed on said isolating material, and are electrically separated from each other by a groove extending between said first and second contacting layers.

Claim 6

The device of claim 3 including a common substrate and a common electrode disposed on said substrate wherein said laser elements are mounted on said common substrate with said first electrodes in electrical contact with said common electrode.

Claim 7

The device of claim 3 wherein said isolating material is a semi-insulating semiconductor.

Claim 8

The device of claim 3 wherein said isolating material is an insulating semiconductor.