US4916510A
Expired / Lapsed
US
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Thin film mesa transistor of field effect type with superlattice
Assignee: Canon Inc
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Filing: 1988-03-11
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Granted: 1990-04-10
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Expires: 2008-03-11
Abstract
Abstract A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline insulating material layers. The thickness of the semiconductor layers is 5 to 500 Å.
Inventors
- 👤 Masafumi Sano
- 👤 Katsuji Takasu
- 👤 Hisanori Tsuda
- 👤 Yutaka Hirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D30/6748; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8163
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
153 words
A thin film mesa type field effect transistor comprising: a substrate, a gate electrode formed on said substrate; an insulating thin film layer formed on said gate electrode subsequent to formation of the gate electrode on said substrate; a multilayer structure formed on said insulating thin film layer subsequent to formation of said insulating thin film layer by alternately laminating a number of first solid layers each comprising a non-monocrystalline semiconductor material and a number of second solid layers each comprising non-monocrystalline material, wherein a difference of an optical energy band gap between said first and second solid layers is set to be greater than 0.4 eV, and a thickness of a single layer of each of said first and second layers has a value such that a quantum effect is obtained; and a drain electrode and a source electrode, said multilayer structure being sandwiched by said drain electrode and said source electrode.
Claim 2
Dependent Claim
153 words
A thin film mesa type field effect transistor comprising: a substrate, a gate electrode formed on said substrate; an insulating thin film layer formed on said gate electrode subsequent to formation of the gate electrode on said substrate; a multilayer structure formed on said insulating thin film layer subsequent to formation of said insulating thin film layer by alternately laminating a number of first solid layers each comprising a non-monocrystalline semiconductor material and a number of second solid layers each comprising non-monocrystalline material, wherein a difference of an optical energy band gap between said first and second solid layers is set to be greater than 0.4 eV, and a thickness of a single layer of each of said first and second layers has a value such that a quantum effect is obtained; and a drain electrode and a source electrode, said multilayer structure being sandwiched by said drain electrode and said source electrode.
Claim 3
Dependent Claim
57 words
A thin film transistor according to claim 1, wherein each of said first solid layers is made of a material selected from the group consisting of hydroamorphous silicon and hydroamorphous silicon germanium, and each of said second solid layers is made of a material selected from the group consisting of hydroamorphous silicon carbide and hydroamorphous silicon nitride.
Claim 4
Dependent Claim
23 words
A thin film transistor according to claim 1, wherein a thickness of each of said first solid layers is 5 to 500 Å.
Claim 5
Dependent Claim
23 words
A thin film transistor according to claim 1, wherein a thickness of each of said second solid layers is 50 to 1000 Å.
Claim 6
Dependent Claim
25 words
A thin film mesa type field effect transistor according to claim 1, wherein said second solid layers comprise a non-monocrystalline material having an insulating property.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-09 | 1993-10-09 | 1994-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-09 | 1997-10-09 | 1998-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-09 | 2001-10-09 | 2002-04-10 | $7700.00 | Window Closed / Lapsed |