US4916502A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device to be coupled with a control circuit by a photocoupler
Assignee: Mitsubishi Electric Corp
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Filing: 1989-09-13
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Granted: 1990-04-10
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Expires: 2009-09-13
Abstract
Abstract A multilayer substrate (18) has two ceramic plates (111, 114) and a shielding metal layer (113) provided between the ceramic plates. An electronic circuit having a TRIAC (7) and a photocoupler (5) is provided on the multilayer substrate. The shielding metal layer and a second main electrode (T 2 ) of the TRIAC are connected with each other by solder filled in a through hole 116. External noise is captured by the shielding metal layer, to be propagated to the second main electrode.
Inventors
- 👤 Seiichi Oshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:12
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H05; H05K; H05K1/00; H05K1/02; H05K1/0213; H05K1/0216; H05K1/0218; H05K1/18; H05K3/00; H05K3/22; H05K3/28; H05K3/284; H10W; H10W74/00; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
121 words
A semiconductor device having a thyristor operating in response to a signal supplied through a photocoupler, said semiconductor device comprising: (a) a heat radiation metal plate for diffusing heat generated in said semiconductor device; (b) a multilayer member provided on said heat radiation metal plate, said multilayer member having: (b-1) an insulating substrate, (b-2a shielding metal layer provided on said insulating substrate for shielding said semiconductor device against external noise, and (b-3) an insulation layer provided on said shielding metal layer; and (c) an electronic circuit provided on said multilayer member and having a photocoupler and a thyristor operating in response to a signal supplied through said photocoupler, said shielding metal layer being connected to a main electrode of said thyristor.
Claim 2
Dependent Claim
121 words
A semiconductor device having a thyristor operating in response to a signal supplied through a photocoupler, said semiconductor device comprising: (a) a heat radiation metal plate for diffusing heat generated in said semiconductor device; (b) a multilayer member provided on said heat radiation metal plate, said multilayer member having: (b-1) an insulating substrate, (b-2a shielding metal layer provided on said insulating substrate for shielding said semiconductor device against external noise, and (b-3) an insulation layer provided on said shielding metal layer; and (c) an electronic circuit provided on said multilayer member and having a photocoupler and a thyristor operating in response to a signal supplied through said photocoupler, said shielding metal layer being connected to a main electrode of said thyristor.
Claim 3
Dependent Claim
29 words
A semiconductor device in accordance with claim 1, wherein a conductive pattern layer is provided on said insulation layer, said electronic circuit being provided on said conductive pattern layer.
Claim 4
Dependent Claim
37 words
A semiconductor device in accordance with claim 2, wherein said electronic circuit and said shielding metal layer are electrically connected with each other through a conductive material provided in a through hole formed in said insulation layer.
Claim 5
Dependent Claim
27 words
A semiconductor device in accordance with claim 3, wherein said multilayer member is formed by integrating a plurality of ceramic plates having surfaces subjected to metallization processing.
Claim 6
Dependent Claim
77 words
A semiconductor device in accordance with claim 1, wherein said insulating substrate is provided thereon with a conductive pattern layer on which a part of said electronic circuit is placed, a part of said conductive pattern layer is said shielding metal layer, said insulation layer is provided on an upper surface of said shielding metal layer, and within said electronic circuit, a part connected to a control electrode of said thyristor is provided on said insulation layer.
Claim 7
Dependent Claim
58 words
A semiconductor device in accordance with claim 5, wherein said insulation layer is provided on a first portion of said shielding metal layer, said thyristor is placed on a second portion of said shielding metal layer, and said shielding metal layer forms, within a plurality of electrodes of said thyristor an electrode being different from said control electrode.
Claim 8
Dependent Claim
28 words
A semiconductor device in accordance with claim 6, wherein said insulating substrate is formed by a ceramic plate and said insulation layer is prepared by a resin film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-04-09 | 1993-10-09 | 1994-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-09 | 1997-10-09 | 1998-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-09 | 2001-10-09 | 2002-04-10 | $7700.00 | Window Closed / Lapsed |