US4916083A
Expired / Lapsed
US
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High performance sidewall emitter transistor
Assignee: International Business Machines Corp
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Filing: 1989-03-06
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Granted: 1990-04-10
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Expires: 2009-03-06
Abstract
Abstract A novel vertical bipolar device endowed with a lithography-independent tightly controlled submicron-wide emitter. In one embodiment, the emitter is contacted by a self-aligned conductive sidewall linked up to a horizontal conductive link. The extrinsic base, embedded within the collector, is recessed below and laterally spaced from the emitter by an insulator layer formed on the emitter sidewall. Transistor action is confined to the small emitter within the intrinsic base, the latter being contiguous with the extrinsic base. The base is contacted by means of a conductive self-aligned silicide formed on the extrinsic base. In a second embodiment, the emitter is of a desired shape with a correspondingly shaped contacting sidewall and pad integral structure. In a third embodiment, the emitter is ring shaped. In all embodiments, electrical contact to emitter is established at a distance laterally away from the transistor action area. A novel process of forming vertical (e.g. NPN) bipolar device in which starting with a substrate having an N type epitaxial collector region, a horizontal layer composed of oxide-polysilicon dual layer with a substantially vertical surface is formed. P type intrinsic base precursor is formed in a surface portion of the collector. A submicron-wide sidewall of N doped polysilicon is established on the sidewall. By RIE, a surface portion of the exposed intrinsic base is removed to recess the would-be extrinsic base. An oxide insulator is formed on the sidewall by thermal oxidation and RIE, while simultaneously driving dopant from the sidewall into the intrinsic base thereunder, thereby forming the emitter with self-aligned polysilicon sidewall contact and delineating the intrinsic base. Extrinsic base is implanted into the exposed recessed intrinsic base. A self-aligned silicide layer is formed on the extrinsic base as also on the horizontal polysilicon layer linked with the sidewall.
Inventors
- 👤 Michael D. Monkowski
- 👤 Joseph F. Shepard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/40; H10D10/421; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D64/27; H10D64/281
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
148 words
A process for forming a vertical bipolar transistor comprising: providing a semiconductor substrate having a first conductivity type epitaxial layer thereon; forming an insulator-conductor dual layer having at least one substantially vertical surface on said epitaxial layer; forming a second conductivity type intrinsic base region in a surface portion of said epitaxial layer adjacent said wall; forming a first conductivity type doped material on said epitaxial layer as a sidewall abutting said vertical surface; anisotropically etching to recess epitaxial layer not masked by said sidewall and said dual layer below the surface of the remainder of said epitaxial layer; forming a first conductivity type emitter by diffusing dopant from said sidewall into a surface portion of the intrinsic base in correspondence with said sidewall; establishing a second insulator on said sidewall; and forming a second conductivity type extrinsic base in a surface portion of said recessed epitaxial layer.
Claim 2
Dependent Claim
148 words
A process for forming a vertical bipolar transistor comprising: providing a semiconductor substrate having a first conductivity type epitaxial layer thereon; forming an insulator-conductor dual layer having at least one substantially vertical surface on said epitaxial layer; forming a second conductivity type intrinsic base region in a surface portion of said epitaxial layer adjacent said wall; forming a first conductivity type doped material on said epitaxial layer as a sidewall abutting said vertical surface; anisotropically etching to recess epitaxial layer not masked by said sidewall and said dual layer below the surface of the remainder of said epitaxial layer; forming a first conductivity type emitter by diffusing dopant from said sidewall into a surface portion of the intrinsic base in correspondence with said sidewall; establishing a second insulator on said sidewall; and forming a second conductivity type extrinsic base in a surface portion of said recessed epitaxial layer.
Claim 3
Dependent Claim
25 words
The process as in claim 1 wherein said etching step including forming a substantially vertical surface in said epitaxial layer in correspondence with said sidewall.
Claim 4
Dependent Claim
29 words
The process as in claim 2 further comprising forming said second insulator on said vertical surface of the epitaxial layer in conjunction with forming said insulator on said sidewall.
Claim 5
Dependent Claim
18 words
The process as in claim 3 further comprising forming a self-aligned conductive silicide layer on said extrinsic base.
Claim 6
Dependent Claim
15 words
The process as in claim 1 wherein said recess is substantially below said emitter diffusion.
Claim 7
Dependent Claim
16 words
The process as in claim 1 further comprising a self-aligned conductive silicide formed on said conductor.
Claim 8
Dependent Claim
20 words
The process as in claim 1 wherein said conductor is selected from a group consisting of polysilicon, polycide and silicide.
Claim 9
Dependent Claim
13 words
The process as in claim 1 wherein said sidewall is composed of polysilicon.
Claim 10
Dependent Claim
13 words
The process as in claim 3 wherein said second insulator is silicon dioxide.
Claim 11
Dependent Claim
16 words
The process as in claim 21 wherein said epitaxial layer constitutes the collector of said transistor.
Claim 12
Dependent Claim
197 words
A process for forming a vertical bipolar transistor comprising: providing a semiconductor substrate having thereon a first conductivity type epitaxial layer and an isolation material recessed into a portion of said layer; forming thereon a first insulator layer having an opening with substantially vertical surfaces to expose only a portion of said recessed material and said layer; forming the intrinsic base by doping a surface portion of said epitaxial layer exposed by said opening with second conductivity type dopant; forming on said intrinsic base and isolation material a first conductivity type conductor layer comprised of an integral structure of a sidewall thereof established on at least one of said vertical surfaces in correspondence with said base and a pad thereof established on said isolation material and said first insulator; recessing the intrinsic base portion not masked by said first insulator and conductor; forming a first conductivity type emitter by diffusing dopant from said conductor sidewall into a surface portion- of said intrinsic base thereunder, said sidewall serving as self-aligned contact to said emitter; establishing a second insulator on said sidewall; and forming the extrinsic base by doping said recessed intrinsic base with dopant of second conductivity type.
Claim 13
Dependent Claim
197 words
A process for forming a vertical bipolar transistor comprising: providing a semiconductor substrate having thereon a first conductivity type epitaxial layer and an isolation material recessed into a portion of said layer; forming thereon a first insulator layer having an opening with substantially vertical surfaces to expose only a portion of said recessed material and said layer; forming the intrinsic base by doping a surface portion of said epitaxial layer exposed by said opening with second conductivity type dopant; forming on said intrinsic base and isolation material a first conductivity type conductor layer comprised of an integral structure of a sidewall thereof established on at least one of said vertical surfaces in correspondence with said base and a pad thereof established on said isolation material and said first insulator; recessing the intrinsic base portion not masked by said first insulator and conductor; forming a first conductivity type emitter by diffusing dopant from said conductor sidewall into a surface portion- of said intrinsic base thereunder, said sidewall serving as self-aligned contact to said emitter; establishing a second insulator on said sidewall; and forming the extrinsic base by doping said recessed intrinsic base with dopant of second conductivity type.
Claim 14
Dependent Claim
25 words
The process as in claim 11 wherein said emitter is diffused to a depth substantially less than the depth of said recessed intrinsic base portion.
Claim 15
Dependent Claim
20 words
The process as in claim 11 further comprising forming a self-aligned conductive silicide base contact layer on said extrinsic base.
Claim 16
Dependent Claim
13 words
The process as in claim 11 wherein conductor layer is composed of polysilicon.
Claim 17
Dependent Claim
17 words
The process as in claim 14 further comprising forming a self-aligned conductive silicide layer on said pad.
Claim 18
Dependent Claim
18 words
The process as in claim 15 further comprising establishing conductive contact with said pad for contacting said emitter.
Claim 19
Dependent Claim
16 words
The process as in claim 13 further comprising making electrical contact with said base contact layer.
Claim 20
Dependent Claim
48 words
The process as in claim 11 wherein said step of establishing second insulator on said sidewall comprises: forming a layer of said second insulator by thermal oxidation of said sidewall and said recessed portion; and reactive ion etching to remove said second insulator from all substantially horizontal surfaces.
Claim 21
Dependent Claim
17 words
The process as in claim 11 wherein said intrinsic base is formed by multiple ion implantation steps.
Claim 22
Dependent Claim
133 words
A process for forming a high performance transistor comprising: providing a semiconductor substrate having a first conductivity type collector region thereon; forming an insulator-conductor-insulator multiple layer having an opening with substantially vertical surfaces on said collector; forming a second conductivity type intrinsic base region in a surface portion of said collector by introducing dopant through said opening; forming a sidewall of doped material on said vertical surfaces; recessing the intrinsic base not masked by said multiple layer and said sidewall; forming a first conductivity type emitter by diffusing dopant from said sidewall into a surface portion of the intrinsic base directly under said sidewall; forming a second insulator on said sidewall; and forming the extrinsic base of said transistor by introducing dopant into the recessed intrinsic base portion not masked by second insulator.
Claim 23
Dependent Claim
133 words
A process for forming a high performance transistor comprising: providing a semiconductor substrate having a first conductivity type collector region thereon; forming an insulator-conductor-insulator multiple layer having an opening with substantially vertical surfaces on said collector; forming a second conductivity type intrinsic base region in a surface portion of said collector by introducing dopant through said opening; forming a sidewall of doped material on said vertical surfaces; recessing the intrinsic base not masked by said multiple layer and said sidewall; forming a first conductivity type emitter by diffusing dopant from said sidewall into a surface portion of the intrinsic base directly under said sidewall; forming a second insulator on said sidewall; and forming the extrinsic base of said transistor by introducing dopant into the recessed intrinsic base portion not masked by second insulator.
Claim 24
Dependent Claim
22 words
The process as in claim 40 wherein said conductor is selected from a group consisting of polysilicon, silicide, polycide or refractory metal.
Claim 25
Dependent Claim
13 words
The process as in claim 20 wherein said sidewall is composed of polysilicon.
Claim 26
Dependent Claim
13 words
The process as in claim 20 wherein said second insulator is silicon dioxide.
Claim 27
Dependent Claim
17 words
The process as in claim, 23 wherein said oxide is formed by thermal oxidation of said polysilicon.
Claim 28
Dependent Claim
17 words
The process as in claim 20 wherein said recess is substantially below the depth of said emitter.
Claim 29
Dependent Claim
17 words
The process as in claim 20 further comprising forming a self-aligned conductive silicide on said extrinsic base.
Claim 30
Dependent Claim
31 words
The process as in claim 20 further comprising establishing a conductive contact with said emitter by forming a conductive with said conductor layer at a distance laterally away from the emitter.
Claim 31
Dependent Claim
15 words
The process as in claim 20 further comprising establishing base contact interior to said opening.
Claim 32
Dependent Claim
150 words
A process for forming a high performance vertical transistor comprising: providing a silicon substrate having a first conductivity type collector on a surface portion thereof; forming a multiple layer composed of insulator, first conductivity doped polysilicon and oxide, said layer having an opening with substantially vertical surfaces; forming the intrinsic base of said transistor by implanting a surface portion of said collector through said opening with second conductivity type ions; introducing first conductivity type dopant into a surface portion of said intrinsic base to form an emitter precursor; forming a first conductivity type conductive sidewall in said vertical surfaces to contact said precursor; forming an insulator on said sidewall; etching away said precursor and a surface portion of said intrinsic base not masked by said sidewall and the insulator thereon, thereby forming the emitter; and forming by second conductivity type ion implantation the extrinsic base in said etched intrinsic base.
Claim 33
Dependent Claim
150 words
A process for forming a high performance vertical transistor comprising: providing a silicon substrate having a first conductivity type collector on a surface portion thereof; forming a multiple layer composed of insulator, first conductivity doped polysilicon and oxide, said layer having an opening with substantially vertical surfaces; forming the intrinsic base of said transistor by implanting a surface portion of said collector through said opening with second conductivity type ions; introducing first conductivity type dopant into a surface portion of said intrinsic base to form an emitter precursor; forming a first conductivity type conductive sidewall in said vertical surfaces to contact said precursor; forming an insulator on said sidewall; etching away said precursor and a surface portion of said intrinsic base not masked by said sidewall and the insulator thereon, thereby forming the emitter; and forming by second conductivity type ion implantation the extrinsic base in said etched intrinsic base.
Claim 34
Dependent Claim
26 words
The process as in claim 29 further comprising forming a layer of refractory metal silicide on said extrinsic base and establishing base contact on said silicide.
Claim 35
Dependent Claim
16 words
The process as in claim 30 wherein said conductive sidewall is either polysilicon, polycide or silicide.
Claim 36
Dependent Claim
18 words
The process as in claim 31 further comprising forming emitter contact by establishing conductive contact with said polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-09 | 1993-10-09 | 1994-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-09 | 1997-10-09 | 1998-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-09 | 2001-10-09 | 2002-04-10 | $7700.00 | Window Closed / Lapsed |