Patent US4915745A successfully refreshed from Google Patents.
US4915745A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film solar cell and method of making
Assignee: Atlantic Richfield Co
•
Filing: 1988-09-22
•
Granted: 1990-04-10
•
Expires: 2008-09-22
Abstract
Abstract A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.
Inventors
- 👤 Gary A. Pollock
- 👤 Kim W. Mitchell
- 👤 James H. Ermer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:14
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0623; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
60 words
In a photovoltaic device of the type having a metal back contact, a Group I-III-VI semiconductor film of a first conductivity type on said back contact and a semiconductor film of conductivity type opposite said first type on said Group I-III-VI film, the improvement comprising: an interfacial film containing gallium between said metal back contact and said Group I-III-VI film.
Claim 2
Dependent Claim
60 words
In a photovoltaic device of the type having a metal back contact, a Group I-III-VI semiconductor film of a first conductivity type on said back contact and a semiconductor film of conductivity type opposite said first type on said Group I-III-VI film, the improvement comprising: an interfacial film containing gallium between said metal back contact and said Group I-III-VI film.
Claim 3
Dependent Claim
26 words
An improved device according to claim 1 wherein said interfacial film comprises gallium and at least one of the elements which comprise said Group I-III-VI film.
Claim 4
Dependent Claim
14 words
An improved device according to claim 2 wherein said interfacial film comprises gallium selenide.
Claim 5
Dependent Claim
24 words
An improved device according to claim 1 wherein said interfacial film contains gallium equivalent to at least about fifty angstroms of pure elemental gallium.
Claim 6
Dependent Claim
60 words
In a photovoltaic device of the type having a metal back contact, a copper indium diselenide semiconductor film of a first conductivity type on said back contact and a semiconductor film of a second conductivity type on said copper indium diselenide film, the improvement comprising: an interfacial film containing gallium between said back contact and said copper indium diselenide film.
Claim 7
Dependent Claim
60 words
In a photovoltaic device of the type having a metal back contact, a copper indium diselenide semiconductor film of a first conductivity type on said back contact and a semiconductor film of a second conductivity type on said copper indium diselenide film, the improvement comprising: an interfacial film containing gallium between said back contact and said copper indium diselenide film.
Claim 8
Dependent Claim
12 words
The photovoltaic device of claim 5 wherein said back contact comprises molybdenum.
Claim 9
Dependent Claim
19 words
The photovoltaic device of claim 5 wherein said back contact comprises a film of molybdenum on a glass substrate.
Claim 10
Dependent Claim
21 words
The photovoltaic device of claim 5 wherein said interfacial film comprises copper, indium, selenium and at least one atomic percent gallium.
Claim 11
Dependent Claim
14 words
An improved device according to claim 5 wherein said interfacial film comprises gallium selenide.
Claim 12
Dependent Claim
24 words
An improved device according to claim 5 wherein said interfacial film contains gallium equivalent to at least about fifty angstroms of pure elemental gallium.
Claim 13
Dependent Claim
42 words
A photovoltaic device comprising: a metal back contact; an interfacial film comprising gallium on said back contact; a film of p-type copper indium diselenide semiconductor on said interfacial film; and a film of n-type semiconductor deposited on said copper indium diselenide film.
Claim 14
Dependent Claim
42 words
A photovoltaic device comprising: a metal back contact; an interfacial film comprising gallium on said back contact; a film of p-type copper indium diselenide semiconductor on said interfacial film; and a film of n-type semiconductor deposited on said copper indium diselenide film.
Claim 15
Dependent Claim
12 words
The photovoltaic device of claim 11 wherein said back contact comprises molybdenum.
Claim 16
Dependent Claim
19 words
The photovoltaic device of claim 11 wherein said back contact comprises a film of molybdenum on a glass substrate.
Claim 17
Dependent Claim
21 words
A device according to claim 11 wherein said interfacial film comprises copper, indium, selenium and at least one atomic percent gallium.
Claim 18
Dependent Claim
16 words
A device according to claim 11 wherein said interfacial layer is less than 2000 angstroms thick.
Claim 19
Dependent Claim
19 words
A device according to claim 15 wherein said interfacial layer is from about 50 to about 500 angstroms thick.
Claim 20
Dependent Claim
13 words
A device according to claim 11 wherein said interfacial film comprises gallium selenide.
Claim 21
Dependent Claim
23 words
A device according to claim 11 wherein said interfacial film contains gallium equivalent to at least about fifty angstroms of pure elemental gallium.
Claim 22
Independent Claim
80 words
A method for making a photovoltaic device comprising: depositing an interfacial film containing gallium on a metal back contact, depositing a film of copper on said interfacial film, depositing a film of indium on said film of copper, heating said back contact and interfacial, copper and indium films in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a film comprising copper indium diselenide.
Claim 23
Independent Claim
80 words
A method for making a photovoltaic device comprising: depositing an interfacial film containing gallium on a metal back contact, depositing a film of copper on said interfacial film, depositing a film of indium on said film of copper, heating said back contact and interfacial, copper and indium films in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a film comprising copper indium diselenide.
Claim 24
Dependent Claim
20 words
A method according to claim 19 wherein said interfacial film comprises copper and at least about one atomic percent gallium.
Claim 25
Dependent Claim
13 words
A method according to claim 19 wherein said interfacial film comprises gallium selenide.
Claim 26
Dependent Claim
31 words
A method according to claim 19 wherein said interfacial film is deposited to a thickness selected to provide a quantity of gallium equivalent to about fifty angstroms of pure elemental gallium.
Claim 27
Independent Claim
80 words
A method for making a photovoltaic device comprising: depositing a first film comprising copper and at least one atomic percent gallium on a metal back contact, depositing a second film comprising indium on said first film, and heating said substrate with said first and second films in the presence of a source of selenium for a time and at a temperature selected to cause interdiffusion of copper, indium and selenium to form a film consisting essentially of copper indium diselenide.
Claim 28
Independent Claim
80 words
A method for making a photovoltaic device comprising: depositing a first film comprising copper and at least one atomic percent gallium on a metal back contact, depositing a second film comprising indium on said first film, and heating said substrate with said first and second films in the presence of a source of selenium for a time and at a temperature selected to cause interdiffusion of copper, indium and selenium to form a film consisting essentially of copper indium diselenide.
Claim 29
Dependent Claim
33 words
A method according to claim 23 wherein said first film is deposited to a thickness selected to provide a quantity of gallium equivalent to at least about fifty angstroms of pure elemental gallium.
References Cited (Backward Citations)
US4335266A
Cited
US4465575A
Cited
US4581108A
Cited
US4611091A
Cited
US4798660A
Cited
US4703131A
Cited
US4818357A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-09 | 1993-10-09 | 1994-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-09 | 1997-10-09 | 1998-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-09 | 2001-10-09 | 2002-04-10 | $7700.00 | Window Closed / Lapsed |