Patent US4915482A successfully refreshed from Google Patents.
US4915482A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical modulator
Assignee: International Business Machines Corp
•
Filing: 1988-10-27
•
Granted: 1990-04-10
•
Expires: 2008-10-27
Abstract
Abstract A method of modulating light incident to a semiconductor body comprising the steps of: coupling the incident light to the surface plasmon polariton mode at an interface of the semiconductor body; and selectively altering the absorption of the incident light by the semiconductor body so as to decouple the incident light from the surface plasmon polariton mode. The absorption can be selectively altered by establishing a quantum confined optical absorption region within the semiconductor body, and effecting a Stark shift of the quantum confined optical absorption region.
Inventors
- 👤 Reuben T. Collins
- 👤 John R. Kirtley
- 👤 Thomas N. Theis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:16
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/017; B; B82; B82Y; B82Y20/00; G02F1/0155; G02F1/0157; G02F2203/00; G02F2203/10
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
57 words
A method of modulating light incident to a semiconductor body comprising the steps of: coupling said incident light to the surface plasmon polariton mode at an interface of said semiconductor body; and selectively altering the absorption of said incident light by said semiconductor body so as to decouple said incident light from the surface plasmon polariton mode.
Claim 2
Independent Claim
57 words
A method of modulating light incident to a semiconductor body comprising the steps of: coupling said incident light to the surface plasmon polariton mode at an interface of said semiconductor body; and selectively altering the absorption of said incident light by said semiconductor body so as to decouple said incident light from the surface plasmon polariton mode.
Claim 3
Dependent Claim
45 words
A method in accordance with claim 1 wherein said step of altering the absorption of said incident light includes the steps of: establishing a quantum confined optical absorption region within said semiconductor body; and effecting a Stark shift of said quantum confined optical absorption region.
Claim 4
Dependent Claim
39 words
A method in accordance with claim 2 and further including the step of reflecting said incident light from said interface of said semiconductor body, whereby said step of effecting a Stark shift alters the intensity of the reflected light.
Claim 5
Dependent Claim
30 words
A method in accordance with claim 2 wherein said step of establishing a quantum confined optical absorption region includes providing at least one quantum well structure within said semiconductor device.
Claim 6
Dependent Claim
24 words
A method in accordance with claim 2 wherein said step of effecting a Stark shift includes establishing an electrical field across said semiconductor body.
Claim 7
Dependent Claim
35 words
A method in accordance with claim 4 wherein said step of establishing said quantum well structure includes the step of providing a first band gap semiconductor material sandwiched between a second band gap semiconductor material.
Claim 8
Dependent Claim
43 words
A method in accordance with claim 2 wherein said coupling step comprises the steps of: providing a periodic grating of a negative dielectric constant material at said interface; and phase matching the incident light to the surface plasmon using the periodically grated interface.
Claim 9
Dependent Claim
57 words
Apparatus for modulating light incident to a semiconductor body comprising: means for coupling said incident light to the surface plasmon polariton mode at an interface of said semiconductor body; and means for selectively altering the absorption of said incident light by said semiconductor body so as to decouple said incident light from the surface plasmon polariton mode.
Claim 10
Dependent Claim
57 words
Apparatus for modulating light incident to a semiconductor body comprising: means for coupling said incident light to the surface plasmon polariton mode at an interface of said semiconductor body; and means for selectively altering the absorption of said incident light by said semiconductor body so as to decouple said incident light from the surface plasmon polariton mode.
Claim 11
Dependent Claim
45 words
Apparatus in accordance with claim 8 wherein said means for altering the absorption of said incident light includes: means for establishing a quantum confined optical absorption region within said semiconductor body; and means for effecting a Stark shift of said quantum confined optical absorption region.
Claim 12
Dependent Claim
37 words
Apparatus in accordance with claim 9 and further including means for reflecting said incident light from said interface of said semiconductor body, whereby said means for effecting a Stark shift alters the intensity of the reflected light.
Claim 13
Dependent Claim
28 words
Apparatus in accordance with claim 9 wherein said means for establishing a quantum confined optical absorption region includes at least one quantum well structure within said semiconductor device.
Claim 14
Dependent Claim
25 words
Apparatus in accordance with claim 9 wherein said means for effecting a Stark shift includes means for establishing an electrical field across said semiconductor body.
Claim 15
Dependent Claim
32 words
Apparatus in accordance with claim 11 wherein said means for establishing said quantum confined optical absorption region includes a first band gap semiconductor material sandwiched between a second band gap semiconductor material.
Claim 16
Dependent Claim
23 words
Apparatus in accordance with claim 9 wherein said coupling means includes a periodic grating of a negative dielectric constant material at said interface.
Claim 17
Dependent Claim
20 words
Apparatus in accordance with claim 9 and further including an antireflective coating disposed over the surface of said semiconductor device.
Claim 18
Dependent Claim
98 words
An optical modulator comprising: a semiconductor body having a positive dielectric constant and a periodically grated surface; a layer of negative dielectric metal coating said periodically grated surface; at least one quantum well including a first bandgap material sandwiched between a second bandgap material in said semiconductor body proximate and generally parallel to said periodically grated surface; means for applying an electrical field across said semiconductor body, and means for generating a beam of light incident to said semiconductor body such that said beam of light is phase matched to the surface plasmon using said periodically grated surface.
Claim 19
Dependent Claim
98 words
An optical modulator comprising: a semiconductor body having a positive dielectric constant and a periodically grated surface; a layer of negative dielectric metal coating said periodically grated surface; at least one quantum well including a first bandgap material sandwiched between a second bandgap material in said semiconductor body proximate and generally parallel to said periodically grated surface; means for applying an electrical field across said semiconductor body, and means for generating a beam of light incident to said semiconductor body such that said beam of light is phase matched to the surface plasmon using said periodically grated surface.
Claim 20
Dependent Claim
21 words
An optical modulator in accordance with claim 16 and further including an antireflective coating on the surface of said semiconductor body.
Claim 21
Dependent Claim
26 words
An optical modulator in accordance with claim 16 wherein said first bandgap material comprises GaAs and said second bandgap material comprises Al x Ga 1-x As.
References Cited (Backward Citations)
US4057321A
Cited
US4025939A
Cited
US4093345A
Cited
US4218143A
Cited
US4525687A
Cited
US4620214A
Cited
EP0249645A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-09 | 1993-10-09 | 1994-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-09 | 1997-10-09 | 1998-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-09 | 2001-10-09 | 2002-04-10 | $7700.00 | Window Closed / Lapsed |