US4914490A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-single crystal electroluminescent device
Assignee: Canon Inc
•
Filing: 1989-01-30
•
Granted: 1990-04-03
•
Expires: 2009-01-30
Abstract
Abstract A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5x1016 cm-3xeV-1 or less.
Inventors
- 👤 Katsuji Takasu
- 👤 Masafumi Sano
- 👤 Hisanori Tsuda
- 👤 Yutaka Hirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:24
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/833; B; B82; B82Y; B82Y20/00; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H10H20/01; H10H20/011; H10H20/014; H10H20/0145; H10H20/81; H10H20/811; H10H20/812; H10H20/817; H10H20/818
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
119 words
A light emitting device comprising: (a) a luminescent layer having at least two layers laminated to each other, the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier; (i) each layer comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and (ii) having a homo-junction at the interface of said layers, and (b) at least a pair of electrodes connected electrically to said luminescent layer, and each of said non-single crystalline silicon layers having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 2
Dependent Claim
119 words
A light emitting device comprising: (a) a luminescent layer having at least two layers laminated to each other, the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier; (i) each layer comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and (ii) having a homo-junction at the interface of said layers, and (b) at least a pair of electrodes connected electrically to said luminescent layer, and each of said non-single crystalline silicon layers having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 3
Dependent Claim
29 words
A light emitting device according to claim 1, wherein said luminescent layer has a layer constitution in which a P-type conductive layer and an N-type conductive layer are laminated.
Claim 4
Dependent Claim
38 words
A light emitting device according to claim 1, wherein said luminescent layer has a layer constitution in which a P-type conductive layer, a layer containing no impurity of P-type and N-type and an N-type conductive layer are laminated.
Claim 5
Dependent Claim
33 words
A light emitting device according to claim 1, wherein said luminescent layer has a layer constitution in which a P-type conductive layer, an I-type conductive layer and an N-type conductive layer are laminated.
Claim 6
Dependent Claim
22 words
A light emitting device according to claim 1, wherein the quantum efficiency of the luminescent layer is 10 -4 % or higher.
Claim 7
Dependent Claim
114 words
A light emitting device comprising a luminescent layer comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms, the thickness of the luminescent layer being approximately the De Broglie wavelength of the carrier or about the means free path of the carrier, a pair of electrically insulating layers having said luminescent layer sandwiched therebetween and at least a pair of electrodes electrically connected to said luminescent layer and insulating layers having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layers having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 8
Dependent Claim
114 words
A light emitting device comprising a luminescent layer comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms, the thickness of the luminescent layer being approximately the De Broglie wavelength of the carrier or about the means free path of the carrier, a pair of electrically insulating layers having said luminescent layer sandwiched therebetween and at least a pair of electrodes electrically connected to said luminescent layer and insulating layers having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layers having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 9
Dependent Claim
134 words
A light emitting device comprising a luminescent layer having a layer constitution of a p-type conductive layer, a semiconductor intermediate layer and an N-type conductive layer, and at least a pair of electrodes electrically connected to said luminescent layer, at least one layer of the three layers constituting said luminescent layer having a multi-layer structure in which a first layer region comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and a second layer region different in optical band gap from said first layer region are laminated as a pair and plurality of said pairs are laminated as a unit within said at least one layer the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier.
Claim 10
Dependent Claim
134 words
A light emitting device comprising a luminescent layer having a layer constitution of a p-type conductive layer, a semiconductor intermediate layer and an N-type conductive layer, and at least a pair of electrodes electrically connected to said luminescent layer, at least one layer of the three layers constituting said luminescent layer having a multi-layer structure in which a first layer region comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and a second layer region different in optical band gap from said first layer region are laminated as a pair and plurality of said pairs are laminated as a unit within said at least one layer the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier.
Claim 11
Dependent Claim
17 words
A light emitting device according to claim 7, wherein said first layer region has I-type conductive characteristics.
Claim 12
Dependent Claim
20 words
A light emitting device according to claim 7, wherein said first layer region contains no impurity of P-type and N-type.
Claim 13
Dependent Claim
26 words
A light emitting device according to claim 7, wherein said second layer region has an optical band gap greater than that of the first layer region.
Claim 14
Dependent Claim
22 words
A light emitting device according to claim 7, wherein the quantum efficiency of the luminescent layer is 10 -4 % or higher.
Claim 15
Dependent Claim
129 words
A light emitting device comprising a pair of electrically insulating layers having a luminescent layer sandwiched therebetween, and at least a pair of electrodes electrically connected to said luminescent layer and said insulating layers having said luminescent layer and said insulating layers sandwiched therebetween, said luminescent layer having a multi-layer structure in which a first layer region comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and a second layer region different in optical band gap from said first layer region are laminated as a pair and a plurality of said pairs are laminated as a unit within said luminescent layer, the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the means free path of the carrier.
Claim 16
Dependent Claim
129 words
A light emitting device comprising a pair of electrically insulating layers having a luminescent layer sandwiched therebetween, and at least a pair of electrodes electrically connected to said luminescent layer and said insulating layers having said luminescent layer and said insulating layers sandwiched therebetween, said luminescent layer having a multi-layer structure in which a first layer region comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and a second layer region different in optical band gap from said first layer region are laminated as a pair and a plurality of said pairs are laminated as a unit within said luminescent layer, the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the means free path of the carrier.
Claim 17
Dependent Claim
23 words
A light emitting device according to claim 12, wherein the optical band gap of said first layer region is at least 2.0 eV.
Claim 18
Dependent Claim
32 words
A light emitting device according to claim 12, wherein the localized level density at mid gap of said first layer region is no more than 5×10 16 cm -3 ·eV -1 .
Claim 19
Dependent Claim
124 words
A light emitting device comprising a luminescent layer having a layer structure in which an N-type conductive layer, a first semiconductor intermediate layer (I), a p-type conductive layer and a second semiconductive intermediate layer (II) are laminated in this order, the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier, and at least a pair of electrodes connected electrically to said luminescent layer, said luminescent layer comprising a non-single crystalline material containing silicon atoms, carbons atoms and hydrogen atoms, and said material having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 20
Dependent Claim
124 words
A light emitting device comprising a luminescent layer having a layer structure in which an N-type conductive layer, a first semiconductor intermediate layer (I), a p-type conductive layer and a second semiconductive intermediate layer (II) are laminated in this order, the thickness of each laminated layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier, and at least a pair of electrodes connected electrically to said luminescent layer, said luminescent layer comprising a non-single crystalline material containing silicon atoms, carbons atoms and hydrogen atoms, and said material having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 21
Dependent Claim
30 words
A light emitting device according to claim 15, wherein at least one of said first semiconductive intermediate layer (I) and said second semiconductive intermediate layer (II) have I-type conductive characteristics.
Claim 22
Dependent Claim
33 words
A light emitting device according to claim 15, wherein at least one of said first semiconductive intermediate layer (I) and said second semiconductive intermediate layer (II) contain no impurity of P-type and N-type.
Claim 23
Dependent Claim
14 words
A light emitting device according to claim 15, wherein said layer structure is periodic.
Claim 24
Dependent Claim
22 words
A light emitting device according to claim 15, wherein the quantum efficiency of the luminescent layer is 10 -4 % or higher.
Claim 25
Dependent Claim
112 words
A light emitting device comprising a luminescent layer comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms, the thickness of the luminescent layer being approximately the De Broglie wavelength of the carrier or about the means free path of the carrier, an electrically insulating layer superposed on said luminescent layer and at least a pair of electrodes electrically connected to said luminescent layer and said insulating layer having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layer having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 26
Dependent Claim
112 words
A light emitting device comprising a luminescent layer comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms, the thickness of the luminescent layer being approximately the De Broglie wavelength of the carrier or about the means free path of the carrier, an electrically insulating layer superposed on said luminescent layer and at least a pair of electrodes electrically connected to said luminescent layer and said insulating layer having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layer having an optical band gap of at least 2.0 eV and a localized level density at mid-gap of no more than 5×10 16 cm -3 ·eV -1 .
Claim 27
Dependent Claim
129 words
A light emitting device comprising a luminescent layer, an electrically insulating layer superposed on said luminescent layer and at least a pair of electrodes electrically connected to said luminescent layer and said insulating layer having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layer having a multi-layer structure in which a first layer region comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and a second layer region different in optical band gap from said first layer region are laminated as a pair and a plurality of said pairs are laminated as a unit within said luminescent layer, the thickness of the luminescent layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier.
Claim 28
Dependent Claim
129 words
A light emitting device comprising a luminescent layer, an electrically insulating layer superposed on said luminescent layer and at least a pair of electrodes electrically connected to said luminescent layer and said insulating layer having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layer having a multi-layer structure in which a first layer region comprising a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms and a second layer region different in optical band gap from said first layer region are laminated as a pair and a plurality of said pairs are laminated as a unit within said luminescent layer, the thickness of the luminescent layer being approximately the De Broglie wavelength of the carrier or about the mean free path of the carrier.
Claim 29
Dependent Claim
23 words
A light emitting device according to claim 21, wherein the optical band gap of said first layer region is at least 2.0 eV.
Claim 30
Dependent Claim
29 words
A light emitting device according to claim 21, wherein the localized level density at mid gap of said first layer region is 5×10 16 cm -3 ·ev or less.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-02 | 1993-10-02 | 1994-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-02 | 1997-10-02 | 1998-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-02 | 2001-10-02 | 2002-04-03 | $7700.00 | Window Closed / Lapsed |