Patent US4911905A successfully refreshed from Google Patents.
US4911905A
Expired / Lapsed
US
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Method of forming stoichiometric II-VI compounds of high purity
Assignee: DRS Infrared Technologies LP
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Filing: 1989-02-24
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Granted: 1990-03-27
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Expires: 2009-02-24
Abstract
Abstract The disclosure relates to a method of purifying cadmium and tellurium and forming pure, stoichiometric cadmium telluride therefrom as well as the apparatus for making such cadmium telluride. The cadmium and tellurium are purified by heating each separately to volatilization and passing water in a reducing gas through the volatilized cadmium and tellurium to react with impurities and form gases or precipitates. The cadmium and tellurium are volatilized at different predetermined temperatures such that the amount of each volatilized will be the same so that reaction later takes place with stoichiometric amounts of the elements to form the cadmium telluride. The cadmium telluride is then condensed at low enough temperature so that the remaining gases pass out of the system.
Inventors
- 👤 Donald F. Weirauch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:31
CPC Classifications
C; C22; C22B; C22B9/00; C22B9/02; C01; C01B; C01B19/00; C01B19/007; C01B19/02; C22B17/00; C22B17/06; Y; Y02; Y02P; Y02P10/00; Y02P10/20
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
216 words
A method of forming stoichiometric cadmium telluride, comprising the steps of: (a) providing first and second separated chambers, each of said chambers having an inlet and an outlet; (b) placing impure elemental cadmium in said first chamber and impure elemental tellurium in said second chamber; (c) heating said first chamber to a temperature to volatilize the cadmium and volatilizable impurity material therein with a predetermined vapor pressure in said first chamber and heating said second chamber to a temperature to volatilize the tellurium and volatilizable impurity material therein with substantially said predetermined vapor pressure in said second chamber, the vapor pressure of cadmium and tellurium in said first and second chambers, respectively being essentially the same; (d) passing water in a reducing ambient gas from the inlet to the outlet of each of said chambers whereby said water reacts with said volatilized impurity material in said impure cadmium and said impure tellurium to form hydrogen and a gas, said reducing ambient gas carrying volatilized cadmium, tellurium and gas formed in the reaction of water and the impurity material therewith; (e) combining said water, reducing ambient gas and carried volatiles from said outlets to form cadmium telluride vapors and other vapors; and (f) solidifying said cadmium telluride to form stoichiometric cadmium telluride while exhausting said other vapors.
Claim 2
Independent Claim
216 words
A method of forming stoichiometric cadmium telluride, comprising the steps of: (a) providing first and second separated chambers, each of said chambers having an inlet and an outlet; (b) placing impure elemental cadmium in said first chamber and impure elemental tellurium in said second chamber; (c) heating said first chamber to a temperature to volatilize the cadmium and volatilizable impurity material therein with a predetermined vapor pressure in said first chamber and heating said second chamber to a temperature to volatilize the tellurium and volatilizable impurity material therein with substantially said predetermined vapor pressure in said second chamber, the vapor pressure of cadmium and tellurium in said first and second chambers, respectively being essentially the same; (d) passing water in a reducing ambient gas from the inlet to the outlet of each of said chambers whereby said water reacts with said volatilized impurity material in said impure cadmium and said impure tellurium to form hydrogen and a gas, said reducing ambient gas carrying volatilized cadmium, tellurium and gas formed in the reaction of water and the impurity material therewith; (e) combining said water, reducing ambient gas and carried volatiles from said outlets to form cadmium telluride vapors and other vapors; and (f) solidifying said cadmium telluride to form stoichiometric cadmium telluride while exhausting said other vapors.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said impurities are taken from the class consisting of sulfur and carbon.
Claim 4
Dependent Claim
67 words
The method of claim 1, wherein: (a) said ambient gas is a mixture of about 10% hydrogen and about 90% nitrogen; (b) said impure cadmium is heated to about 450 degrees C. and said impure tellurium is heated to about 500 degrees C.; (c) said cadmium telluride vapors are formed at about 1000 degrees C.; and (d) said cadmium telluride is solidified at about 800 degrees C.
Claim 5
Dependent Claim
18 words
The method of claim 3 wherein said impurities are taken from the class consisting of sulfur and carbon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-26 | 1993-09-25 | 1994-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-26 | 1997-09-25 | 1998-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-26 | 2001-09-25 | 2002-03-27 | $7700.00 | Window Closed / Lapsed |