US4911896A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fused quartz member for use in semiconductor manufacture
Assignee: General Electric Co
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Filing: 1986-07-24
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Granted: 1990-03-27
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Expires: 2006-07-24
Abstract
Abstract A composite fused quartz material is disclosed for processing semiconductor grade silicon material in an improved manner. The modified vitreous material includes a disperse phase of fine size silicon metal particles which are distributed in preselected regions of the fused quartz matrix as a means of exercising temperature control in the various semiconductor processing operations using these fused quartz parts. Such utilization of the modified vitreous material in single crystal silicon rod growth and production of semiconductor grade silicon by diffusion doping is described. A method to produce the modified vitreous material is also disclosed.
Inventors
- 👤 Peter P. Bihuniak
- 👤 Gordon E. Dogunke
- 👤 Robert D. Shelley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:09
CPC Classifications
C; C03; C03B; C03B19/00; C03B19/06; C03B19/066; C03C; C03C3/00; C03C3/04; C03C3/06; C03B19/09; C03B19/095; C03C11/00; C30; C30B; C30B15/00; C30B15/10; C30B15/12; C30B35/00; C30B35/002; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1068
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
142 words
A composite fused quartz member employed in the drawing of a single crystal silicon rod from a molten polysilicon mass at elevated temperatures which comprises a fused quartz matrix having occluded bubbles which contains a disperse phase of from about 25 ppm up to about 2000 ppm by weight of fine size spherically shaped silicon metal crystals uniformly distributed throughout the fused quartz matrix in at least a portion of said fused quartz member so as to reduce infrared optical transmission through said portion to a room-temperature value no greater than about 30% at a 3 mm sample thickness, said fused quartz member being further characterized by a total content of other metal impurities not exceeding 100 ppm by weight, wherein that portion of said fused quartz member which contains said disperse phase serves to control temperature distribution in the drawing process.
Claim 2
Dependent Claim
142 words
A composite fused quartz member employed in the drawing of a single crystal silicon rod from a molten polysilicon mass at elevated temperatures which comprises a fused quartz matrix having occluded bubbles which contains a disperse phase of from about 25 ppm up to about 2000 ppm by weight of fine size spherically shaped silicon metal crystals uniformly distributed throughout the fused quartz matrix in at least a portion of said fused quartz member so as to reduce infrared optical transmission through said portion to a room-temperature value no greater than about 30% at a 3 mm sample thickness, said fused quartz member being further characterized by a total content of other metal impurities not exceeding 100 ppm by weight, wherein that portion of said fused quartz member which contains said disperse phase serves to control temperature distribution in the drawing process.
Claim 3
Dependent Claim
16 words
A fused quartz member as in claim 1 having the shape of a closed-end hollow vessel.
Claim 4
Dependent Claim
26 words
A fused quartz member as in claim 2 wherein that portion which contains said disperse phase is located at the top wall portions of said vessel.
Claim 5
Dependent Claim
20 words
A fused quartz member as in claim 1 having the shape of a ;hollow cylinder serving as a thermal shield.
Claim 6
Dependent Claim
15 words
A fused quartz member as in claim 1 having the shape of a cylindrical disc.
Claim 7
Dependent Claim
166 words
A composite fused quartz member employed in the formation of a semiconductor element by doping semiconductor grade single-crystal silicon material at elevated temperatures with a gaseous atmosphere containing the doping element which comprises a closed vessel that includes at least one composite fused quartz member having a fused quartz matrix having occluded bubbles which contains a disperse phase of from about 25 ppm up to about 2000 ppm by weight of fine size spherically-shaped silicon metal crystals uniformly distributed throughout the fused quartz matrix in at least a portion of said composite fused quartz member so as to reduce infrared optical transmission through said portion to a room-temperature value no greater than about 30% at a 3 mm sample thickness, said composite fused quartz member being further characterized by a total content of other metal impurities not exceeding 100 ppm by weight wherein that portion of said fused quartz vessel which contains said disperse phase serves to control temperature distribution in the semiconductor material being treated.
Claim 8
Dependent Claim
166 words
A composite fused quartz member employed in the formation of a semiconductor element by doping semiconductor grade single-crystal silicon material at elevated temperatures with a gaseous atmosphere containing the doping element which comprises a closed vessel that includes at least one composite fused quartz member having a fused quartz matrix having occluded bubbles which contains a disperse phase of from about 25 ppm up to about 2000 ppm by weight of fine size spherically-shaped silicon metal crystals uniformly distributed throughout the fused quartz matrix in at least a portion of said composite fused quartz member so as to reduce infrared optical transmission through said portion to a room-temperature value no greater than about 30% at a 3 mm sample thickness, said composite fused quartz member being further characterized by a total content of other metal impurities not exceeding 100 ppm by weight wherein that portion of said fused quartz vessel which contains said disperse phase serves to control temperature distribution in the semiconductor material being treated.
Claim 9
Dependent Claim
16 words
A fused quartz vessel as in claim 6 in the shape of a closed-end hollow cylinder.
Claim 10
Dependent Claim
28 words
A fused quartz vessel as in claim 6 wherein that portion or portions of said fused quartz vessel which contain said disperse phase are limited to the closed-ends.
Claim 11
Dependent Claim
22 words
A fused quartz vessel as in claim 7 wherein the central portion of said closed-end cylinder further includes optically clear fused quartz.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-26 | 1993-09-25 | 1994-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-26 | 1997-09-25 | 1998-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-26 | 2001-09-25 | 2002-03-27 | $7700.00 | Window Closed / Lapsed |