US4910563A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Complementary circuit and structure with common substrate
Assignee: Fairchild Semiconductor Corp
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Filing: 1988-08-15
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Granted: 1990-03-20
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Expires: 2008-08-15
Abstract
Abstract A circuit in accordance with the invention has a complementary pair of a MISFET and a COMFET with their drains connected together. This allows fabrication on a single substrate for greater reliability and reduced cost. The circuit can be used in a full or one half "H-bridge" configuration for controlling current through a load such as a motor.
Inventors
- 👤 James W. Tuska
- 👤 Lawrence A. Goodman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:15
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/837
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
159 words
A structure comprising: a semiconductor substrate having first and second portions, an anode region of a first conductivity type disposed in both of said portions and first and second drain regions of first and second conductivity type, respectively, disposed in said first and second portions of said substrate, respectively, overlying said anode region; an anode and drain conducting contact underlying said substrate and contacting said anode region; first and second body regions of second and first conductivity type, respectively, disposed in said first and second portions, respectively, adjacent said first and second drain regions, respectively; first and second source regions of first and second conductivity type, respectively, adjacent said first and second body regions, respectively; a pair of source contacts respectively overlying said first and second source regions and said substrate; first and second insulating layers disposed over said first and second body regions, respectively; and first and second gates disposed over said first and second insulating layers, respectively.
Claim 2
Dependent Claim
159 words
A structure comprising: a semiconductor substrate having first and second portions, an anode region of a first conductivity type disposed in both of said portions and first and second drain regions of first and second conductivity type, respectively, disposed in said first and second portions of said substrate, respectively, overlying said anode region; an anode and drain conducting contact underlying said substrate and contacting said anode region; first and second body regions of second and first conductivity type, respectively, disposed in said first and second portions, respectively, adjacent said first and second drain regions, respectively; first and second source regions of first and second conductivity type, respectively, adjacent said first and second body regions, respectively; a pair of source contacts respectively overlying said first and second source regions and said substrate; first and second insulating layers disposed over said first and second body regions, respectively; and first and second gates disposed over said first and second insulating layers, respectively.
Claim 3
Dependent Claim
19 words
A structure as claimed in claim 1 wherein said first and second conductivity types respectively comprise N-type and P-type.
Claim 4
Dependent Claim
21 words
A structure as claimed in claim 1 wherein said anode region has an extension disposed between said first and second portions.
Claim 5
Dependent Claim
14 words
A structure as claimed in claim 1 wherein said insulating layers comprise an oxide.
Claim 6
Dependent Claim
27 words
The structure of claim 1 further comprising an extension region of said anode region disposed between said first and second portions adjacent both of said drain regions.
Claim 7
Dependent Claim
33 words
The structure of claim 1 wherein one of said drain regions includes a buffer layer of a conductivity type opposite to that of said one drain region and disposed adjacent said anode region.
Claim 8
Dependent Claim
15 words
The structure of claim 6 wherein said one drain region is said second drain region.
References Cited (Backward Citations)
US4364073A
Cited
US4712124A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-19 | 1993-09-18 | 1994-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-19 | 1997-09-18 | 1998-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-19 | 2001-09-18 | 2002-03-20 | $7700.00 | Window Closed / Lapsed |