Patent US4910158A successfully refreshed from Google Patents.
US4910158A
Expired / Lapsed
US
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Zener diode emulation and method of forming the same
Assignee: Raytheon Co
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Filing: 1987-11-23
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Granted: 1990-03-20
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Expires: 2007-11-23
Abstract
Abstract An integrated circuit structure which emulates the reverse bias breakdown characteristic of a Zener diode is disclosed. It is particularly suited for gallium arsenide MESFET fabrication, for which satisfactory Zener-type devices are not otherwise available. Back-to-back buried diodes are formed by implanting a buried layer of one polarity doping into a semi-insulating substrate, and further implanting a pair of spaced contact regions of opposite polarity but higher doping levels from the buried layer to the substrate surface. The diode action takes place at the junctions of the contact regions and the buried layer. The device is symmetrical in operation, exhibiting a sharp breakdown at a defined voltage threshold. Specific implant energies and concentrations for a buried layer doped with Be + ions and contact regions doped with Si + ions are described. In an alternate embodiment, only one contact region is of opposite polarity to the buried layer, resulting in only one buried diode.
Inventors
- 👤 Carl L. Anderson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:27
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/20; H10D8/25; H10D8/01; H10D8/021; H10D8/022; H10D8/045
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
174 words
A method of forming an emulated zener diode structure in a semi-insulating substrate, comprising: implanting dopant ions of a common polarity into the substrate through a surface thereof to form a pair of mutually spaced conductive contact regions extending from the substrate surface into its interior and mutually separated by the semi-insulating substrate material, and implanting dopant ions into the substrate through said surface to form a buried semiconductive layer of opposite polarity to said contact regions, said buried layer interfacing with said contact regions along two respective contra-directed diode junctions which are buried within the substrate and spaced by their respective contact regions from said substrate surface, whereby one of said diode junctions is reverse biased and the other is forward biased when a voltage differential is applied across said contact regions, and the effective diode breakdown voltage between said contact regions in response to said voltage differential is the sum of the reverse breakdown voltage of the reverse biased diode junction and the forward voltage drop of the forward biased diode junction.
Claim 2
Independent Claim
174 words
A method of forming an emulated zener diode structure in a semi-insulating substrate, comprising: implanting dopant ions of a common polarity into the substrate through a surface thereof to form a pair of mutually spaced conductive contact regions extending from the substrate surface into its interior and mutually separated by the semi-insulating substrate material, and implanting dopant ions into the substrate through said surface to form a buried semiconductive layer of opposite polarity to said contact regions, said buried layer interfacing with said contact regions along two respective contra-directed diode junctions which are buried within the substrate and spaced by their respective contact regions from said substrate surface, whereby one of said diode junctions is reverse biased and the other is forward biased when a voltage differential is applied across said contact regions, and the effective diode breakdown voltage between said contact regions in response to said voltage differential is the sum of the reverse breakdown voltage of the reverse biased diode junction and the forward voltage drop of the forward biased diode junction.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein said substrate is formed from gallium arsenide.
Claim 4
Independent Claim
152 words
A method of forming an emulated zener diode structure in a semi-insulating substrate, comprising: implanting dopant ions into the substrate to form a pair of spaced conductive contact regions extending from the substrate surface into its interior, said substrate being formed from gallium arsenide, and said contact regions being formed as n + regions by implanting Si + ions into the substrate at an implant energy of about 100 KeV and a concentration of about 4.4×10 13 /cm 2 , and implanting dopant ions into the substrate to form a buried semiconductive layer of opposite polarity to at least one of the contact regions, said buried layer interfacing with said contact regions along respective diode junctions, said buried layer being formed with a p type doping by implanting Be + ions into the substrate at an implant energy of about 60 KeV and a concentration of about 6×10 12 /cm 2 .
Claim 5
Independent Claim
152 words
A method of forming an emulated zener diode structure in a semi-insulating substrate, comprising: implanting dopant ions into the substrate to form a pair of spaced conductive contact regions extending from the substrate surface into its interior, said substrate being formed from gallium arsenide, and said contact regions being formed as n + regions by implanting Si + ions into the substrate at an implant energy of about 100 KeV and a concentration of about 4.4×10 13 /cm 2 , and implanting dopant ions into the substrate to form a buried semiconductive layer of opposite polarity to at least one of the contact regions, said buried layer interfacing with said contact regions along respective diode junctions, said buried layer being formed with a p type doping by implanting Be + ions into the substrate at an implant energy of about 60 KeV and a concentration of about 6×10 12 /cm 2 .
Claim 6
Dependent Claim
43 words
The method of claim 3, wherein an additional implant of Be + ions is made into the substrate at an implant energy of about 170 KeV and a concentration of about 1.2×10 13 /cm 2 to enhance the conduction of the buried layer.
References Cited (Backward Citations)
US3655457A
Cited
US4155777A
Cited
US4104085A
Cited
JPS60106178A
Cited
US4651178A
Cited
JPS62117369A
Cited
JPS62209868A
Cited
US4683483A
Cited
JPS62283672A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-19 | 1993-09-18 | 1994-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-19 | 1997-09-18 | 1998-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-19 | 2001-09-18 | 2002-03-20 | $7700.00 | Window Closed / Lapsed |