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US4908171A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of sintering articles of silicon nitride

Assignee: Max-Planck-Gesellschaft zur Förderung der Wissenschaften eV
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Filing: 1988-01-27
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Granted: 1990-03-13
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Expires: 2008-01-27
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Abstract

Abstract A novel method of sintering Si3N4 shaped bodies which method comprises grinding Si3N4 with the use of a grinding material down to a surface area magnitude of 10.5 to 35 m2/g and an average particle size from 0.2 to 0.005 mu m, shaping the powder obtained, and sintering the compact under inert gas or nitrogen at a temperature from 1700 DEG to 1900 DEG C.

Inventors

  • 👤 Nils Claussen
  • 👤 Jurgen Jahn
  • 👤 Gunter Petzow

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 03:24
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/584; C04B35/593

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 135 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies 1 to 3 mm in size of a material selected from the group consisting of a zirconium oxide material or silicate of aluminum, zirconium, beryllium, yttrium, and a combination thereof, to form a powder having an average particle size of 0.2 to 0.5 micrometers and a surface area of 10.5 to 35 square meters per gram; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article.
Claim 2
Dependent Claim 135 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies 1 to 3 mm in size of a material selected from the group consisting of a zirconium oxide material or silicate of aluminum, zirconium, beryllium, yttrium, and a combination thereof, to form a powder having an average particle size of 0.2 to 0.5 micrometers and a surface area of 10.5 to 35 square meters per gram; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article.
Claim 3
Dependent Claim 14 words
The method of claim 1 wherein the grinding bodies are of zirconium oxide material.
Claim 4
Dependent Claim 29 words
The method of claim 1 wherein said grinding is carried out until the Si 3 N 4 has taken up to 10 weight-percent of said oxide grinding body material.
Claim 5
Dependent Claim 30 words
The method of claim 1 wherein the powder compact is heated to a temperature which is in a range of from in excess of 1750° C. up to 1900° C.
Claim 6
Dependent Claim 18 words
The method of claim 1 wherein the sintering temperature is from about 1850° C. to about 1900° C.
Claim 7
Dependent Claim 159 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies of silicon nitride of 1 to 3 mm in size to form a powder having an average particle size of 0.2 to 0.05 micrometers and a surface area of 10.5 to 35 square meters per gram wherein there is added in an amount of up to 10 weight-percent of the total weight of the additive and the Si 3 N 4 employed as a grinding material, at least one of an oxide or silicate of aluminum, magnesium, beryllium and zirconium; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article.
Claim 8
Dependent Claim 159 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies of silicon nitride of 1 to 3 mm in size to form a powder having an average particle size of 0.2 to 0.05 micrometers and a surface area of 10.5 to 35 square meters per gram wherein there is added in an amount of up to 10 weight-percent of the total weight of the additive and the Si 3 N 4 employed as a grinding material, at least one of an oxide or silicate of aluminum, magnesium, beryllium and zirconium; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article.
Claim 9
Dependent Claim 18 words
The method of claim 6 wherein the sintering temperature is from about 1850° C. to about 1900° C.
Claim 10
Dependent Claim 150 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies of 1 to 3 mm in size of a material selected from the group consisting of an oxide or a silicate of aluminum, zirconium, beryllium, yttrium, and a combination thereof, to form a powder having an average particle size of 0.2 to 0.05 micrometers and a surface area of 10.5 to 35 square meters per gram; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article, the sintered article having a lower limit value K IC of 4.3 MN/m 3/2 .
Claim 11
Dependent Claim 150 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies of 1 to 3 mm in size of a material selected from the group consisting of an oxide or a silicate of aluminum, zirconium, beryllium, yttrium, and a combination thereof, to form a powder having an average particle size of 0.2 to 0.05 micrometers and a surface area of 10.5 to 35 square meters per gram; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article, the sintered article having a lower limit value K IC of 4.3 MN/m 3/2 .
Claim 12
Dependent Claim 122 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies of 1 to 3 mm in size and of a material of oxide or silicate of magnesium to form a powder having an average particle size of 0.2 to 0.05 micrometers and a surface area of 10.5 to 35 square meters per gram; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article.
Claim 13
Dependent Claim 122 words
In a method of pressureless sintering of silicon nitride (Si 3 N 4 ) wherein a formed powder compact is heated under an inert atmosphere without hot pressing to form a sintered article, the improvement comprising: grinding silicon nitride in an attritor mill using grinding bodies of 1 to 3 mm in size and of a material of oxide or silicate of magnesium to form a powder having an average particle size of 0.2 to 0.05 micrometers and a surface area of 10.5 to 35 square meters per gram; forming the powder compact using the ground powder; and heating the powder compact to a temperature in the range of 1700° C. to 1900° C. to sinter the compact into the sintered article.

References Cited (Backward Citations)

US3992497A Cited
US4087500A Cited
US4143107A Cited
US4073845A Cited
JPS54107913A Cited
US4225356A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-03-12 1993-09-11 1994-03-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-03-12 1997-09-11 1998-03-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-03-12 2001-09-11 2002-03-13 $7700.00 Window Closed / Lapsed

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