Hardware switch level simulator for MOS circuits

Claim 2

In a computer system for MOS transistor circuit simulation using Bryant algebra for calculating unit delay and performing timing simulation the improvement comprising, first memory means for storing gate parameters of transistors in a VLSI circuit, including pass transistors, said parameters including identification of transistors whose gates are connected to each node of said circuit, second memory means for storing path information of said VLSI circuit, including identification of nodes connected to a source and drain of each transistor, a switch state for each transistor and a switch strength for each transistor, control means communicating with said first and second memory means for retrieving information stored in said first and second memory means, said control means including first gate means for retrieving information in said second memory means and second gate means multiplexed for retrieving information in either one of said first and second memory means, solve means communicating with the control means for detecting unblocked paths to a controlling gate of each pass transistor.

Claim 3

The computer system of claim 1 wherein said solve means detects the condition V gs <V th for pass transistors where V gs is equal to gate to source voltage for an MOS transistor and V th is equal to the threshold voltage for said MOS transistor.

Claim 4

A hardware switch level simulator for MOS transistor circuit simulation comprising, stack memory means for storing a plurality of sets of nodes to be operated upon, link memory means for storing information relating to each transistor in an MOS transistor circuit, including pass transistors, said information including identification of nodes connected to a drain and source of each transistor, a switch state of each transistor and a switch strength of each transistor, gate memory means for storing information relating to each node connected to a transistor gate, said information including identification of transistors whose gates connect to each node, node memory means for storing information relating to each node in said MOS transistor circuit, said information including pointers to information stored in said link memory means relating to transistors identifying each node and to information stored in said gate memory relating to each node, a node state of each node, an intrinsic node strength of each node and strength information associated with a path to each node, control means communicating with said stack, link, gate and node memory means for retrieving information stored in said stack, link, gate and node memory means, said control means including a first gate communicating with said link memory means and a second gate mulitplexed to communicate to either one of said gate memory means and link memory means, and solve means communicating with said stack, link, gate and node memory means via said control means for performing Bryant algebra simulation steps on said sets of nodes, said solve means including means for detecting the condition V gs <V th for MOS pass transistors in said circuit, where V gs is a gate to source voltage for said pass transistor and V th is a threshold voltage for said pass transistor.

Claim 5

A hardware switch level simulator for MOS transistor circuit simulation comprising, stack memory means for storing a plurality of sets of nodes to be operated upon, link memory means for storing information relating to each transistor in an MOS transistor circuit, including pass transistors, said information including identification of nodes connected to a drain and source of each transistor, a switch state of each transistor and a switch strength of each transistor, gate memory means for storing information relating to each node connected to a transistor gate, said information including identification of transistors whose gates connect to each node, node memory means for storing information relating to each node in said MOS transistor circuit, said information including pointers to information stored in said link memory means relating to transistors identifying each node and to information stored in said gate memory relating to each node, a node state of each node, an intrinsic node strength of each node and strength information associated with a path to each node, control means communicating with said stack, link, gate and node memory means for retrieving information stored in said stack, link, gate and node memory means, said control means including a first gate communicating with said link memory means and a second gate mulitplexed to communicate to either one of said gate memory means and link memory means, and solve means communicating with said stack, link, gate and node memory means via said control means for performing Bryant algebra simulation steps on said sets of nodes, said solve means including means for detecting the condition V gs <V th for MOS pass transistors in said circuit, where V gs is a gate to source voltage for said pass transistor and V th is a threshold voltage for said pass transistor.

Claim 6

The simulator of claim 3 wherein said means for detecting the condition of V gs <V th comprises means for detecting unblocked paths to a controlling gate of each pass transistor.

Claim 7

The simulator of claim 3 further comprising means for performing timing simulation of said MOS transistor circuit, said a plurality of sets of nodes in said stack memory means corresponding to different time positions, said link memory means storing information on a predetermined ON resistance for each transistor, said node memory means storing information on cumulative capacitances and delays for each node, said node memory means also storing pointers to parent node of each node.

Claim 8

The simulator of claim 3 wherein said memory means are dynamic random access memory.

Claim 9

The simulator of claim 3 wherein said solve means include means communicating with a computer interfacing circuit for receiving information to be stored in said memory means from said computer interfacing circuit relating to said MOS transistor circuit and for receiving information relating to initial test conditions for said circuit, and for sending simulation results to said computer interfacing circuit.

Claim 10

A hardware switch level simulator comprising a solve unit having a plurality of programmed logic arrays for performing Bryant algebra simulation steps for an MOS transistor circuit including detection of an unblocked path to a controlling gate of a pass transistor, said solve unit also comprising a node memory storing a list of nodes in said circuit with parameters relating to said nodes, a stack unit communicating with said solve unit and storing stacks of nodes in various sets to be operated on by said programmed logic arrays, and a traversal unit communicating with said solve unit and having a gate memory storing a gate list of nodes with pointers to transistors whose gates connect to said nodes, said traversal unit also having a link memory storing a netlist of transistors with parameters relating to said transistors and to connections between nodes and transistors, said traversal unit further comprising a first gate means for addressing said gate list stored in said gate memory and a second gate means for addressing said netlist stored in said link memory, said traversal unit also including a state machine communicating with said solve unit and with said first and second gate means to retrieve gate list and netlist information requested by said programmed logic arrays, said state machine multiplexing said first gate means for addressing said netlist of said link memory during said detection of an unblocked gate to a controlling gate of a pass transistor.

Claim 11

A hardware switch level simulator comprising a solve unit having a plurality of programmed logic arrays for performing Bryant algebra simulation steps for an MOS transistor circuit including detection of an unblocked path to a controlling gate of a pass transistor, said solve unit also comprising a node memory storing a list of nodes in said circuit with parameters relating to said nodes, a stack unit communicating with said solve unit and storing stacks of nodes in various sets to be operated on by said programmed logic arrays, and a traversal unit communicating with said solve unit and having a gate memory storing a gate list of nodes with pointers to transistors whose gates connect to said nodes, said traversal unit also having a link memory storing a netlist of transistors with parameters relating to said transistors and to connections between nodes and transistors, said traversal unit further comprising a first gate means for addressing said gate list stored in said gate memory and a second gate means for addressing said netlist stored in said link memory, said traversal unit also including a state machine communicating with said solve unit and with said first and second gate means to retrieve gate list and netlist information requested by said programmed logic arrays, said state machine multiplexing said first gate means for addressing said netlist of said link memory during said detection of an unblocked gate to a controlling gate of a pass transistor.

Claim 12

The simulator of claim 8 further comprising a timing unit communicating with said solve unit and including a programmed logic array for calculating a cumulated time delay at each node.

Claim 13

The simulator of claim 8 further comprising a computer interface controller for communication with said solve unit and with a host computer for loading transistor and node information about an MOS transistor circuit into said simulator and for sending unit delay and timing simulation results to said host computer.