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US4907041A
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Intra-gate offset high voltage thin film transistor with misalignment immunity
Assignee: Xerox Corp
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Filing: 1988-09-16
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Granted: 1990-03-06
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Expires: 2008-09-16
Abstract
Abstract A high voltage thin film transistor comprising a substrate upon which is supported a non-single crystal semiconductor active layer, spaced from a pair of conductive gate electrodes by a gate dielectric layer, wherein one of the gate electrodes is the device control electrode and the other is a dummy-drain electrode. Heavily doped semiconductor source and drain electrodes are in substantially alignment with the outer edges of the gate electrodes, the source electrode being aligned with the device control electrode and the drain electrode being aligned with the dummy-drain electrode. The active layer has intrinsic or virtually intrinsic region thereof in opposition to the bodies of each of the gate electrodes, and an offset region, between the gate electrodes, having a lower dopant level than the source and drain electrodes, which is aligned with the inner edges of the gate electrodes.
Inventors
- 👤 Tiao-Yuan Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/60; H10D30/611; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D64/00; H10D64/01; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
140 words
A high voltage thin film transistor comprising a substrate upon which is supported first and second conductive gate electrodes, a gate dielectric layer, doped semiconductor source and drain electrodes in substantial alignment with the outer edges of said gate electrodes, said source electrode being aligned with said first gate electrode and said drain electrode being aligned with said second gate electrode, and a non-single crystal semiconductor active layer contiguous with said source and drain electrodes and spaced from said gate electrodes by said gate dielectric layer, said active layer having intrinsic or virtually intrinsic regions thereof in opposition to the bodies of each of said gate electrodes, and having an offset region between said gate electrodes in alignment with the inner edges of said gate electrodes, said offset region having a lower dopant level than said source and drain electrodes.
Claim 2
Dependent Claim
140 words
A high voltage thin film transistor comprising a substrate upon which is supported first and second conductive gate electrodes, a gate dielectric layer, doped semiconductor source and drain electrodes in substantial alignment with the outer edges of said gate electrodes, said source electrode being aligned with said first gate electrode and said drain electrode being aligned with said second gate electrode, and a non-single crystal semiconductor active layer contiguous with said source and drain electrodes and spaced from said gate electrodes by said gate dielectric layer, said active layer having intrinsic or virtually intrinsic regions thereof in opposition to the bodies of each of said gate electrodes, and having an offset region between said gate electrodes in alignment with the inner edges of said gate electrodes, said offset region having a lower dopant level than said source and drain electrodes.
Claim 3
Dependent Claim
20 words
The high voltage thin film transistor as defined in claim 1 wherein said offset region is intrinsic or virtually intrinsic.
Claim 4
Dependent Claim
18 words
The high voltage thin film transistor as defined in claim 1 wherein said offset region is lightly doped.
Claim 5
Dependent Claim
23 words
The high voltage thin film transistor as defined in claim 1 wherein said source and drain electrodes are coplanar with said active layer.
Claim 6
Dependent Claim
21 words
The high voltage thin film transistor as defined in claim 1 wherein said source and drain electrodes overlie said active layer.
Claim 7
Dependent Claim
20 words
A high voltage thin film transistor comprising a high voltage transistor portion in series with a low voltage transistor portion.
Claim 8
Dependent Claim
20 words
A high voltage thin film transistor comprising a high voltage transistor portion in series with a low voltage transistor portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-05 | 1993-09-04 | 1994-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-05 | 1997-09-04 | 1998-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-05 | 2001-09-04 | 2002-03-06 | $7700.00 | Window Closed / Lapsed |