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US4906591A
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Method of manufacturing a semiconductor device having an electric contact portion
Assignee: Mitsubishi Electric Corp
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Filing: 1988-12-06
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Granted: 1990-03-06
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Expires: 2008-12-06
Abstract
Abstract In a method of manufacturing a semiconductor device having an electric contact, semiconductor regions (9) as a source or drain region of a MOS transistor, having a conductivity type opposite to that of a semiconductor substrate (1) are formed selectively on the substrate. An insulating layer (10) is formed on the substrate (1) to expose only a surface of each semiconductor region (9). Impurity ions of the conductivity type opposite to that of the substrate (1) are implanted into the exposed surface of each region (9). After that, a polycrystal silicon layer (13) is formed on the surface of each region (9) implanted with the impurity ions and on the insulating layer (10). Further, impurity ions of the conductivity type opposite to that of the substrate (1) are further implanted into the polycrystal silicon layer (13). The condition of implanting the impurity ions into the polycrystal silicon layer (13) is set by controlling implantation energy to enable the maximum point of concentration distribution of the impurity ions in a direction perpendicular to the surface of the substrate (1) to be distant from a position of the interface between the polycrystal silicon layer (13) and the substrate (1) by a dimension corresponding to a standard deviation of the concentration distribution of the impurity ions toward the polycrystal silicon layer (13).
Inventors
- 👤 Yoshinori Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:13
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P32/00; H10P32/30; H10P32/302; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/02
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
266 words
A method of manufacturing a semiconductor device having an electric contact, comprising the steps of: preparing a semiconductor substrate (1) having a main surface and having a predetermined concentration of impurity of a conductivity type, selectively forming semiconductor regions (9) of conductivity type opposite to that of said semiconductor substrate (1), spaced from each other on said semiconductor substrate, forming an insulating layer (10) over said semiconductor substrate, selectively removing said insulating layer (1) to expose at least a surface of each said semiconductor region (9), implanting impurity ions of the conductivity type opposite to that of said semiconductor substrate (1) into the exposed surface of each of said semiconductor regions (9), forming a polycrystal silicon layer (13) over the exposed surface of said semiconductor region (9) and said insulating layer (10), implanting impurity ions of the conductivity type opposite to that of said semiconductor substrate (1) into said polycrystal silicon layer (13), wherein said step of implanting the impurity ions into said polycrystal silicon layer (13) is executed by controlling implantation energy to set a maximum point of concentration distribution of said impurity ions in a direction perpendicular to said main surface to be at a position distant from an interface between said polycrystal silicon layer (13) and said semiconductor substrate (1) by a distance corresponding to a standard deviation of said concentration distribution toward said polycrystal silicon layer (13), and annealing said polycrystal silicon layer (13) in a vicinity of said semiconductor substrate (9) whereby an electric contact portion (11) is formed between each said semiconductor regions (9) and said polycrystal silicon layer (13).
Claim 2
Independent Claim
266 words
A method of manufacturing a semiconductor device having an electric contact, comprising the steps of: preparing a semiconductor substrate (1) having a main surface and having a predetermined concentration of impurity of a conductivity type, selectively forming semiconductor regions (9) of conductivity type opposite to that of said semiconductor substrate (1), spaced from each other on said semiconductor substrate, forming an insulating layer (10) over said semiconductor substrate, selectively removing said insulating layer (1) to expose at least a surface of each said semiconductor region (9), implanting impurity ions of the conductivity type opposite to that of said semiconductor substrate (1) into the exposed surface of each of said semiconductor regions (9), forming a polycrystal silicon layer (13) over the exposed surface of said semiconductor region (9) and said insulating layer (10), implanting impurity ions of the conductivity type opposite to that of said semiconductor substrate (1) into said polycrystal silicon layer (13), wherein said step of implanting the impurity ions into said polycrystal silicon layer (13) is executed by controlling implantation energy to set a maximum point of concentration distribution of said impurity ions in a direction perpendicular to said main surface to be at a position distant from an interface between said polycrystal silicon layer (13) and said semiconductor substrate (1) by a distance corresponding to a standard deviation of said concentration distribution toward said polycrystal silicon layer (13), and annealing said polycrystal silicon layer (13) in a vicinity of said semiconductor substrate (9) whereby an electric contact portion (11) is formed between each said semiconductor regions (9) and said polycrystal silicon layer (13).
Claim 3
Dependent Claim
38 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 1, wherein said implantation energy is determined by a type of said impurity ions and a thickness of said polycrystal silicon layer (13).
Claim 4
Dependent Claim
31 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 1, wherein said step of implanting said impurity ions includes the step of implanting arsenic ions.
Claim 5
Dependent Claim
32 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 1, wherein said step of implanting said impurity ions includes the step of implanting boron fluoride ions.
Claim 6
Dependent Claim
43 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 1, wherein said method further comprises the step of forming a semiconductor element near each said semiconductor region (9) on the main surface of said semiconductor substrate (1).
Claim 7
Dependent Claim
36 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 5, wherein said step of forming the semiconductor regions (9) comprises the step of forming part of a field effect element.
Claim 8
Dependent Claim
81 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 6, wherein said step of forming part of the field effect element comprises the steps of: forming an insulated gate (8) over said semiconductor substrate (1), and forming one semiconductor region and the other semiconductor region (9) on said semiconductor substrate (1) under said insulated gate (8), whereby a channel region is formed in said semiconductor substrate (1) between said one and other semiconductor regions (9).
Claim 9
Dependent Claim
46 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 7, wherein said step of forming the polycrystal silicon layer (13) includes the step of forming a connection layer in contact with either of said one and other semiconductor regions (9).
Claim 10
Dependent Claim
43 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 8, wherein said step of forming either of said one and other semiconductor regions includes the step of forming an insulating layer (3) for isolating said semiconductor regions.
Claim 11
Dependent Claim
55 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 9, wherein said step of forming the insulating layer (3) for the isolation includes the step of forming a region (2) for preventing inversion in a region of said semiconductor substrate (1) under said insulating layer (3) to be formed.
Claim 12
Dependent Claim
66 words
A method of manufacturing a semiconductor device having an electric contact in accordance with claim 10, further comprising the step of forming an insulating layer (5) on said isolated semiconductor regions and said insulating layer (3) for the isolation and forming a conductive layer (6) on said insulating layer (5), whereby said conductive layer (6) and each said semiconductor region constitute a capacitor for charge storage.
References Cited (Backward Citations)
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