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US4904866A Expired / Lapsed US ⏱️ 0.0 years remaining

Wide area soft vacuum abnormal glow electron beam discharge hardening process

Assignee: QUANTRAD SENSOR Inc
•
Filing: 1988-11-17
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Granted: 1990-02-27
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Expires: 2008-11-17
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Abstract

Abstract A process for large area hardening of photoresists or polymer films placed on substrates is disclosed. The process requires the use of a short duration (<1 us.) pulsed electron beam produced in soft vacuum by an abnormal glow discharge. The pulsed electron beam interacts with the patterned photoresist/polymer resist so as to harden or stabilize the patterns thereon by electron induced cross-linking. The use of a soft vacuum environment allows for both thermal as well as chemically induced hardening.

Inventors

  • 👤 George J. Collins
  • 👤 Jayaram Krishnaswamy

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 05:50
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32018; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/2024; H01J37/30; H01J37/317

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 114 words
A resist hardening process for hardening a previously patterned resist layer on a substrate, the process comprising: positioning a substrate having a previously patterned resist layer thereon in a vacuum chamber; evacuating the vacuum chamber with a selected gas to a selected pressure level; producing a wide area pulsed abnormal glow electron beam discharge from a cold cathode abnormal glow discharge electron gun positioned within the vacuum chamber, said pulsed abnormal glow electron beam discharge being pulsed from a first current level to a higher second current level; and exposing the previously patterned resist layer on the substrate to the wide area pulsed abnormal glow electron beam discharge for a predetermined number of pulses.
Claim 2
Dependent Claim 114 words
A resist hardening process for hardening a previously patterned resist layer on a substrate, the process comprising: positioning a substrate having a previously patterned resist layer thereon in a vacuum chamber; evacuating the vacuum chamber with a selected gas to a selected pressure level; producing a wide area pulsed abnormal glow electron beam discharge from a cold cathode abnormal glow discharge electron gun positioned within the vacuum chamber, said pulsed abnormal glow electron beam discharge being pulsed from a first current level to a higher second current level; and exposing the previously patterned resist layer on the substrate to the wide area pulsed abnormal glow electron beam discharge for a predetermined number of pulses.
Claim 3
Dependent Claim 24 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said selected gas comprises helium.
Claim 4
Dependent Claim 24 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said selected gas comprises hydrogen.
Claim 5
Dependent Claim 25 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said selected gas comprises synthetic air.
Claim 6
Dependent Claim 30 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said selected gas comprises a mixture of hydrogen and synthetic air.
Claim 7
Dependent Claim 30 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said selected gas comprises a mixture of helium and synthetic air.
Claim 8
Dependent Claim 50 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said first pressure level is within the range of 10 -4 to 10 -6 Torr and wherein said second pressure level is within the range of 1.0 to 10 -3 Torr.
Claim 9
Dependent Claim 38 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein each pulse of said wide area glow discharge electron beam discharge has a duration of less than 1 microsecond.
Claim 10
Dependent Claim 38 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 8 where each pulse of said wide area glow discharge electron beam discharge has an energy level greater than 0.1 joule.
Claim 11
Dependent Claim 27 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises an organic material.
Claim 12
Dependent Claim 27 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises a copolymer material.
Claim 13
Dependent Claim 33 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises a polymer material and one or more inorganic materials.
Claim 14
Dependent Claim 27 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises an organosilicon material.
Claim 15
Dependent Claim 27 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises an organometallic material.
Claim 16
Dependent Claim 27 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises a polysilane material.
Claim 17
Dependent Claim 33 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises a polymer material directly doped with a metal compound.
Claim 18
Dependent Claim 32 words
A resist hardening process for hardening a previously patterned resist layer on a substrate as in claim 1 wherein said patterned resist layer comprises a top layer of a plurality of layers.

References Cited (Backward Citations)

US4187331A Cited
US4527044A Cited
US4496449A Cited
US4827137A Cited
US4737688A Cited
US4849628A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-02-26 1993-08-28 1994-02-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-02-26 1997-08-28 1998-02-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-02-26 2001-08-28 2002-02-27 $7700.00 Window Closed / Lapsed

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