US4902911A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit having a built-in power voltage generator
Assignee: Micron Memory Japan Ltd
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Filing: 1988-09-19
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Granted: 1990-02-20
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Expires: 2008-09-19
Abstract
Abstract A semiconductor integrated circuit having a voltage generator circuit for generating an internal power voltage lower than an externally supplied power voltage, a control circuit for generating at least one control signal and a functional circuit operating with the internal power voltage and controlled by the control signal is disclosed and featured in that the control circuit includes a first circuit operating with the externally supplied power voltage and generating a first signal with a predetermined timing relationship with respect to an input control signal thereto and a second circuit operating with the internal voltage and generating a second signal in response to the first signal, as the control signal for the functional circuit.
Inventors
- 👤 Katsuji Hoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:36
CPC Classifications
G; G06; G06F; G06F1/00; G06F1/04; G06F1/10; G06F1/26
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
163 words
A semiconductor integrated circuit comprising: a first means for receiving an externally supplied power voltage; a voltage generator circuit coupled to said first means for generating an internal power voltage lower than said externally supplied power voltage; a second means for receiving a control signal; a first circuit coupled to said first means and said second means, said first circuit operating with said externally supplied power voltage to generate a first signal after a predetermined time from an activation of said control signal a second circuit coupled to said voltage generator circuit and said first circuit, said second circuit operating with said internal power voltage to generate a second signal in response to said first signal, said second signal having an amplitude approximately of said internal power voltage; and a functional circuit coupled to said voltage generator and said second circuit, said functional circuit operating with said internal power voltage and being controlled by said second signal thereby to perform a predetermined function.
Claim 2
Dependent Claim
163 words
A semiconductor integrated circuit comprising: a first means for receiving an externally supplied power voltage; a voltage generator circuit coupled to said first means for generating an internal power voltage lower than said externally supplied power voltage; a second means for receiving a control signal; a first circuit coupled to said first means and said second means, said first circuit operating with said externally supplied power voltage to generate a first signal after a predetermined time from an activation of said control signal a second circuit coupled to said voltage generator circuit and said first circuit, said second circuit operating with said internal power voltage to generate a second signal in response to said first signal, said second signal having an amplitude approximately of said internal power voltage; and a functional circuit coupled to said voltage generator and said second circuit, said functional circuit operating with said internal power voltage and being controlled by said second signal thereby to perform a predetermined function.
Claim 3
Dependent Claim
16 words
The integrated circuit according to claim 1, in which said functional circuit includes a memory circuit.
Claim 4
Dependent Claim
30 words
The integrated circuit according to claim 1, in which said functional circuit includes a plurality of field effect transistors and said first circuit includes a plurality of field effect transistors.
Claim 5
Dependent Claim
75 words
The integrated circuit according to claim 1, in which said voltage generator circuit includes a field effect transistor having a drain receiving said externally supplied power voltage, a bias voltage generator generating a bias voltage, and an operational amplifier having a non-inverting input receiving said bias voltage and an inverting input connected to a source of said field effect transistor, wherein said internal power voltage is generated from the source of said field effect transistor.
Claim 6
Dependent Claim
39 words
The integrated circuit according to claim 1, in which said first circuit includes a plurality of first inverter circuits connected in cascade, said first signal being generated from an output of a predetermined one of said first inverter circuits.
Claim 7
Dependent Claim
32 words
The integrated circuit according to claim 5, in which said second circuit includes an inverter operating with said internal power voltage to generate said second signal in response to said first signal.
Claim 8
Dependent Claim
104 words
An integrated circuit comprising: a power terminal receiving an externally supplied power voltage; a voltage generator generating an internal power voltage having a lower voltage than said externally supplied power voltage; a clock generator driven by said externally supplied power voltage to generate a clock having a first voltage swing of the externally supplied power voltage; an amplitude converter driven by said internal power voltage to convert said first voltage swing of said clock to a second voltage swing of said internal power voltage; a functional circuit driven by said internal power voltage to perform a functional operation in response to said converted clock.
Claim 9
Dependent Claim
104 words
An integrated circuit comprising: a power terminal receiving an externally supplied power voltage; a voltage generator generating an internal power voltage having a lower voltage than said externally supplied power voltage; a clock generator driven by said externally supplied power voltage to generate a clock having a first voltage swing of the externally supplied power voltage; an amplitude converter driven by said internal power voltage to convert said first voltage swing of said clock to a second voltage swing of said internal power voltage; a functional circuit driven by said internal power voltage to perform a functional operation in response to said converted clock.
Claim 10
Dependent Claim
32 words
The integrated circuit as claimed in claim 7, wherein said clock generator is formed of MOS transistors having selected dimensions larger than those used in said amplitude converter and said functional circuit.
Claim 11
Dependent Claim
19 words
The integrated circuit as claimed in claim 8, wherein said selected dimensions are channel lengths of the MOS transistors.
Claim 12
Dependent Claim
21 words
The integrated circuit as claimed in claim 9, wherein said clock generator generates said clock by delaying an externally applied clock.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-19 | 1993-08-21 | 1994-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-19 | 1997-08-21 | 1998-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-19 | 2001-08-21 | 2002-02-20 | $7700.00 | Window Closed / Lapsed |