Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
116 words
A static random access memory comprising: an array of static memory cells each having resistors functioning as load elements; peripheral circuits for controlling the writing of data into, and the reading of data from, the static memory cells; a first power-supply voltage line for applying a first power-supply voltage to the peripheral circuit; a bonding pad connected to the first power-supply voltage line; a second power-supply voltage line for applying a second power-supply voltage to the static memory cells; and level-shifting means connected between the first and second power-supply voltage lines, for shifting the level of the first power-supply voltage and applying the level-shifted voltage to the static memory cells via said second power-supply voltage line.
Claim 2
Dependent Claim
116 words
A static random access memory comprising: an array of static memory cells each having resistors functioning as load elements; peripheral circuits for controlling the writing of data into, and the reading of data from, the static memory cells; a first power-supply voltage line for applying a first power-supply voltage to the peripheral circuit; a bonding pad connected to the first power-supply voltage line; a second power-supply voltage line for applying a second power-supply voltage to the static memory cells; and level-shifting means connected between the first and second power-supply voltage lines, for shifting the level of the first power-supply voltage and applying the level-shifted voltage to the static memory cells via said second power-supply voltage line.
Claim 3
Dependent Claim
21 words
The static random access memory according to claim 1, wherein said level-shifting means is an MOS switching element having a gate.
Claim 4
Dependent Claim
31 words
The static random access memory according to claim 2, wherein a second bonding pad is provided, and the gate of said MOS switching element is connected to the second bonding pad.
Claim 5
Dependent Claim
29 words
The static random access memory according to claim 1, wherein a third bonding pad is provided, and said second power-supply voltage line is connected to the third bonding pad.
Claim 6
Dependent Claim
17 words
The static random access memory according to claim 1, wherein said level-shifting means is a voltage-drop circuit.
Claim 7
Dependent Claim
27 words
The static random access memory according to claim 5, wherein said voltage-drop circuit operates under the control of a control signal supplied to said second bonding pad.
Claim 8
Dependent Claim
39 words
The static random access memory according to claim 5, wherein a control signal generating circuit having a fuse is provided, and said voltage-drop circuit operates under the control of a control signal output by said control signal generating circuit.
Claim 9
Dependent Claim
94 words
A static random access memory comprising: an array of static memory cells each having resistors functioning as load elements; peripheral circuits for controlling the writing of data into, and the reading of data from, the static memory cells; a first power-supply voltage line for applying a first power-supply voltage to the memory cells of said array; a second power-supply voltage line for applying a first power-supply voltage to the peripheral circuits; a first bonding pad connected to the first power-supply voltage line; and a second bonding pad connected to the second power-supply voltage line.
Claim 10
Dependent Claim
94 words
A static random access memory comprising: an array of static memory cells each having resistors functioning as load elements; peripheral circuits for controlling the writing of data into, and the reading of data from, the static memory cells; a first power-supply voltage line for applying a first power-supply voltage to the memory cells of said array; a second power-supply voltage line for applying a first power-supply voltage to the peripheral circuits; a first bonding pad connected to the first power-supply voltage line; and a second bonding pad connected to the second power-supply voltage line.
Claim 11
Dependent Claim
29 words
The static random access memory according to claim 8, wherein a voltage lower than the voltage applied to said first bonding pad is supplied to said second bonding pad.