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Gas sensor and method of manufacturing the same

Assignee: Osaka Gas Co Ltd
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Filing: 1987-11-05
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Granted: 1990-01-30
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Expires: 2007-11-05
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Abstract

Abstract A gas sensor using an n-type metal oxide semiconductor and a method for manufacturing such a gas sensor is provided. More particularly, a gas sensor for detecting an inflammable gas and a method for manufacturing the same.

Inventors

  • 👤 Masamichi Ippommatsu
  • 👤 Takeshi Matsumoto
  • 👤 Shingo Yakushizi
  • 👤 Katsuyuki Kuroki
  • 👤 Takashi Matsuzaka

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 10:35
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/12

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 62 words
A gas sensor comprising a thin film of an n-type metal oxide conductor which changes resistivity according to the gas species detected, and an insulting film on a surface of said thin film, wherein the oxide film insulator contains one or more oxides selected from the group consisting of SiO 2 , MnO 2 , MNO and V 2 O 5 .
Claim 2
Dependent Claim 62 words
A gas sensor comprising a thin film of an n-type metal oxide conductor which changes resistivity according to the gas species detected, and an insulting film on a surface of said thin film, wherein the oxide film insulator contains one or more oxides selected from the group consisting of SiO 2 , MnO 2 , MNO and V 2 O 5 .
Claim 3
Dependent Claim 17 words
A gas sensor as in claim 1, wherein the metal oxide semiconductor film comprises SnO 2 .
Claim 4
Dependent Claim 19 words
A gas sensor as in claim 1, wherein the n-type metal oxide semiconductor film has a columnar crystal structure.
Claim 5
Dependent Claim 19 words
A gas sensor as in claim 1, wherein the oxide film insulator is 0.005 to 3 μm in thickness
Claim 6
Dependent Claim 19 words
A gas sensor as in claim 4, wherein the oxide film insulator is 0.01 to 1 μm in thickness.
Claim 7
Dependent Claim 19 words
A gas sensor as in claim 4 wherein the oxide film insulator is 0.1 to 0.5 μm is thickness.
Claim 8
Dependent Claim 17 words
A gas sensor as in claim 1 wherein the oxide film insulator has the columnar crystal structure.

References Cited (Backward Citations)

US4732738A Cited
US4574264A Cited
US4592967A Cited
US4697165A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-01-29 1993-07-31 1994-01-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-01-29 1997-07-31 1998-01-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-01-29 2001-07-31 2002-01-30 $7700.00 Window Closed / Lapsed

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