Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
117 words
A semiconductor device comprising: a semiconductor body; heat generating means, including an active semiconductor element; an insulation film formed on a surface of said semiconductor body; a heat-sensitive element including at least one diode element formed by a PN junction being formed in a polycrystalline silicon semiconductor layer on said insulation film in such a manner that said heat-sensitive element is separated from said semiconductor body, said heat-sensitive element detecting the temperature of said semiconductor body varying due to the heat generated by said heat generating means; and means, electrically connected to said heat-sensitive element, for deriving, as a temperature detection signal, the level of a forward voltage drop generate din said at least one diode element.
Claim 2
Dependent Claim
117 words
A semiconductor device comprising: a semiconductor body; heat generating means, including an active semiconductor element; an insulation film formed on a surface of said semiconductor body; a heat-sensitive element including at least one diode element formed by a PN junction being formed in a polycrystalline silicon semiconductor layer on said insulation film in such a manner that said heat-sensitive element is separated from said semiconductor body, said heat-sensitive element detecting the temperature of said semiconductor body varying due to the heat generated by said heat generating means; and means, electrically connected to said heat-sensitive element, for deriving, as a temperature detection signal, the level of a forward voltage drop generate din said at least one diode element.
Claim 3
Dependent Claim
41 words
A semiconductor device according to claim 1, wherein said diode element having said PN junction includes a pair of highly doped region and lowly doped region, the impurity concentration of said lowly doped region being 1×10 19 cm -3 or more.
Claim 4
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein said heat generating means is an active semiconductor element formed in said semiconductor body.
Claim 5
Dependent Claim
20 words
A semiconductor device according to claim 3, wherein said active semiconductor element is a vertical type power MOS transistor element.
Claim 6
Dependent Claim
67 words
A semiconductor device according to claim 1, wherein said diode element having said PN junction includes a pair of highly doped region and lowly doped region, the impurity concentration of said lowly doped region being 1×10 19 cm -3 or more; and said heat generating means is an active semiconductor element formed in said semiconductor body, said active semiconductor element being a vertical type power MOS transistor.
Claim 7
Dependent Claim
97 words
A semiconductor device according to claim 3, wherein said heat-sensitive element has a plurality of PN junctions including each of a pair of highly doped regions and lowly doped regions, and further includes a conductive member which connects said plurality of PN junctions to each other in series in the same polar direction so as to form a plurality of diode elements, the impurity concentration of said lowly doped region being 1×10 19 cm -3 or more; and the temperature of said semiconductor body generated by said active semiconductor element is detected by said plurality of diodes.
Claim 8
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said heat-sensitive element is located in the substantially center part of said semiconductor body, said heat generating means surrounding said heat-sensitive element region.