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US4894705A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Sharp Corp
•
Filing: 1987-09-24
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Granted: 1990-01-16
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Expires: 2007-09-24
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Abstract

Abstract A semiconductor device has high-resistance polysilicon sections sandwiched between two wiring layers. Low-resistance sections are formed by ion-injection of impurities across selected ones of these high-resistance polysilicon sections to electrically connect the two wiring layers according to a user's specification.

Inventors

  • 👤 Setsufumi Kamuro

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 15:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/492

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 95 words
A semiconductor device comprising a first wiring layer, a second wiring layer, an inter-layer insulative film between said first wiring layer and said second wiring layer, and a plurality of polysilicon sections sandwiched between said first and second wiring layers, different ones of said polysilicon sections being separated by said inter-layer insulative film, selected ones of said polysilicon sections being low-resistance polysilicon sections and the rest of said polysilicon sections being high-resistance polysilicon sections such that said first and second wiring layers are electrically connected with each other through each of said low-resistance polysilicon sections.
Claim 2
Dependent Claim 95 words
A semiconductor device comprising a first wiring layer, a second wiring layer, an inter-layer insulative film between said first wiring layer and said second wiring layer, and a plurality of polysilicon sections sandwiched between said first and second wiring layers, different ones of said polysilicon sections being separated by said inter-layer insulative film, selected ones of said polysilicon sections being low-resistance polysilicon sections and the rest of said polysilicon sections being high-resistance polysilicon sections such that said first and second wiring layers are electrically connected with each other through each of said low-resistance polysilicon sections.
Claim 3
Dependent Claim 13 words
The semiconductor device of claim 1 wherein said low-resistance polysilicon sections contain impurities.
Claim 4
Dependent Claim 24 words
The semiconductor device of claim 1 further comprising a semiconductor substrate and an insulating layer between said semiconductor substrate and said second wiring layer.
Claim 5
Dependent Claim 13 words
The semiconductor device of claim 1 wherein said second wiring layer comprises aluminum.
Claim 6
Dependent Claim 19 words
The semiconductor device of claim 1 wherein said second wiring layer comprises a metal with a high melting point.
Claim 7
Dependent Claim 18 words
The semiconductor device of claim 1 wherein said high-resistance polysilicon sections have a specific resistance of about 100Ω/square.
Claim 8
Dependent Claim 18 words
The semiconductor device of claim 1 wherein said high-resistance polysilicon sections are of P-type and include N-type impurities.
Claim 9
Dependent Claim 19 words
The semiconductor device of claim 1 wherein said low-resistance polysilicon sections have specific resistance in the range of 10-100GΩ/square.
Claim 10
Dependent Claim 16 words
The semiconductor device of claim 1 further comprising a protective layer covering said first wiring layer.
Claim 11
Dependent Claim 22 words
The semiconductor device of claim 1 wherein said first and second wiring layers each comprise a plurality of mutually parallel metallic lines.
Claim 12
Dependent Claim 16 words
The semiconductor device of claim 3 wherein said low-resistance polysilicon sections are of N 30 -type.

References Cited (Backward Citations)

US4546366A Cited
US4297721A Cited
US4541006A Cited
US4319261A Cited
US4673969A Cited
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US4710897A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-01-15 1993-07-17 1994-01-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-01-15 1997-07-17 1998-01-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-01-15 2001-07-17 2002-01-16 $7700.00 Window Closed / Lapsed

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