Patent US4893162A successfully refreshed from Google Patents.
US4893162A
Expired / Lapsed
US
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Integrated semiconductor arrangement of the coupling type between a photodetector and a light waveguide
Assignee: US Philips Corp
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Filing: 1987-06-29
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Granted: 1990-01-09
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Expires: 2007-06-29
Abstract
Abstract An integrated semiconductor arrangement of the coupling type between a photodetector D and a light wave guide G 1 , operating in a band of given wavelengths, containing on the surface of a semiconductor substrate S of a III-V compound one after the other a confining layer C 0 of III-V compound and a transparent layer C 1 of a III-V compound for the operating wavelengths having an index superior to that of the confining layer, the light waveguide G 1 being realized in layer C 1 , and also containing an absorbing layer C 3 of a III-V compound for the operating wavelengths having an index superior to that of the waveguide, in which layer C 3 the photodetector is realized, characterized in that the absorbing layer C 3 is deposited on top of the transparent layer C 1 such that the photodetector is formed on the surface of the light wave guide G 1 and coupled to the latter in parallel with its axis over a given coupling length L 2 of which is a function the amount of light issued by the guide and received by the photodetector. This arrangement can also include, deposited between the transparent layer C 1 , hereinafter called first transparent layer and the absorbing layer C 3 , a second transparent layer C 2 of a III-V compound for the operating wavelengths having an index lying between that of the first transparent layer C 1 and that of the absorbing layer C 3 .
Inventors
- 👤 Jean-Louis Gentner
- 👤 Marko Erman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:43
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/10; G02B6/12; G02B6/12004
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
201 words
An integrated semiconductor device of the type for coupling between a photodetector D and a light waveguide G 1 , operating within a band of given wavelengths, containing on the surface of a semiconductor substrate S of a III-V compound a confining layer C 0 of a III-V compound and a transparent layer C 1 of a III-V compound, transparent layer C 1 being transparent for the operating wavelengths and having an index superior to that of the confining layer, the light waveguide G 1 being disposed in layer C 1 , and also containing an absorbing layer C 3 of a III-V compound, for the operating wavelengths, having an index superior to that of the waveguide, in which later C 3 the photodetector is formed, characterized in that the absorbing layer C 3 is deposited on top of the transparent layer C 1 such that the photodetector is formed on the surface of the light waveguide G 1 and coupled to said waveguide G 1 in parallel with the axis of G 1 over a given coupling length L 2 which is a function of the amount of light issued by the waveguide G 1 and received by the photodetector.
Claim 2
Dependent Claim
201 words
An integrated semiconductor device of the type for coupling between a photodetector D and a light waveguide G 1 , operating within a band of given wavelengths, containing on the surface of a semiconductor substrate S of a III-V compound a confining layer C 0 of a III-V compound and a transparent layer C 1 of a III-V compound, transparent layer C 1 being transparent for the operating wavelengths and having an index superior to that of the confining layer, the light waveguide G 1 being disposed in layer C 1 , and also containing an absorbing layer C 3 of a III-V compound, for the operating wavelengths, having an index superior to that of the waveguide, in which later C 3 the photodetector is formed, characterized in that the absorbing layer C 3 is deposited on top of the transparent layer C 1 such that the photodetector is formed on the surface of the light waveguide G 1 and coupled to said waveguide G 1 in parallel with the axis of G 1 over a given coupling length L 2 which is a function of the amount of light issued by the waveguide G 1 and received by the photodetector.
Claim 3
Dependent Claim
157 words
A device as claimed in claim 1, characterized in that said device comprises, deposited between the transparent layer C 1 , hereinafter called first transparent layer, and the absorbing layer C 3 , a second transparent layer C 2 of a III-V compound for the operating wavelengths having an index lying between that of the first transparent layer C 1 and that of the absorbing layer C 3 , in which second transparent layer C 2 a second light waveguide G 2 referred to as an intermediated guide is realised, formed on the surface of the guide deposited in the first transparent layer C 1 , hereinafter called main guide G 1 , and coupled to the latter in parallel with the axis of G 1 over a coupling length L 1 which is a function of the amount of light issued by the main guide G 1 and received by the intermediate guide G 2 .
Claim 4
Independent Claim
173 words
A device as claimed in one of the claims 1 or 2, characterized in that the substrate S is an A III B V compound in which A is, for example, the indium element (In) and B is, for example, the phosphorus element (P) in that the confining layer is an A III B V compound of the n + conductivity type, in that the first transparent layer C 1 is of the A III B V compound of the n - conductivity type, and in that the absorbing layer C 3 is an (A III X III , B V Y V ) compound in which A is, for example, the indium element (In), X is, for example, the gallium element (Ga), B is, for example, the phosphorus element (P) and Y is, for example, the arsenic element (As), thus forming a quaternary compound of the formula (GaInAs y P 1-y ) in which the concentration y is chosen for obtaining the absorbing characteristics of the compound at the chosen operating wavelength.
Claim 5
Dependent Claim
28 words
A device as claimed in claim 3, characterized in that for the chosen operating wavelength λ 1 =1.3 μm, the concentration y is bounded by the relationship 0.7≦y<1.
Claim 6
Dependent Claim
81 words
A device as claimed in claim 2 characterized in that the second transparent layer C 1 is of an (A III X III , B V Y V ) compound in which for example A is indium (In), X is gallium (Ga), B is phosphorus (P) and Y is arsenic (As), thus forming a quaternary compound of the formula (GaIn, As y P 1-y ) in which the concentration y is chosen for obtaining transparency characteristics for the chosen operating wavelength.
Claim 7
Dependent Claim
29 words
A device as claimed in claim 5, characterized in that for the chosen operating wavelength of λ 1 =1.3 μm, the concentration y is bounded by the relationship 0.1≦y<0.7.
Claim 8
Dependent Claim
35 words
A device as claimed in claim 1, characterized in that the longitudinal faces of the guides G 1 and G 2 , as well as the faces of the detector are limited by crystallographic faces.
Claim 9
Dependent Claim
49 words
A device as claimed in claim 1, characterized in that the intermediate guide G 2 contains a reflecting facet M 1 at the end of the coupling length L 1 for reflecting the light in the direction of the photodetector which is positioned remote from guide G 1 .
Claim 10
Dependent Claim
19 words
A device as claimed in claim 8, characterized in that the reflecting facet M 1 is a crystallographic facet.
Claim 11
Dependent Claim
47 words
A device as claimed in claim 2, characterized in that the intermediate guide G 2 contains a reflecting facet M 2 at the end of the coupling length L 2 for reflecting the light in the direction of the absorbing layer C 3 of the photodetector D.
Claim 12
Dependent Claim
19 words
A device as claimed in claim 10, characterized in that the reflecting facet M 2 is a crystallographic facet.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-08 | 1993-07-10 | 1994-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-08 | 1997-07-10 | 1998-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-08 | 2001-07-10 | 2002-01-09 | $7700.00 | Window Closed / Lapsed |