Patent US4893156A successfully refreshed from Google Patents.
US4893156A
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Mos fet Device
Assignee: Miyagi National College of Technology
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Filing: 1988-03-07
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Granted: 1990-01-09
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Expires: 2008-03-07
Abstract
Abstract The disclosed MOS FET device has a semiconductor substrate of for instance n-type, on which a drain zone of for instance p-type and a source zone of for instance p-type are formed with a channel zone disposed therebetween. An insulating thin film is disposed on the channel zone and a gate electrode is formed on the insulating film so as to face the channel zone across the film. At least one of drain zone and the source zone has a tapered portion whose diminished edge extends into the channel zone so as to face the other one of the drain and source zones.
Inventors
- 👤 Shinji Karasawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:51
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D48/00; H10D48/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
188 words
A MOS FET device comprising a semiconductor substrate of one conductivity type, a source layer of the other conductivity type formed in the substrate, a drain layer of the other conductivity type formed in the substrate with a gap from the source layer, a drain electrode applied on the drain layer, a channel region being defined in the substrate between said source layer and said drain layer, an insulating film overlying the channel zone, and a gate electrode applied on the insulating film so as to face the channel region via the insulating film, at least one of the source and drain layers having a tapered portion whose diminished edge extends into the channel zone so as to face the other one of the source and drain layers, wherein the diminished edge of said at least one of the source and drain layers is separated from the other one of the source and drain layers by such a gap L that a carrier moving speed in the channel zone is saturated when a sourcedrain voltage higher than a threshold value is applied across the source and drain electrodes.
Claim 2
Dependent Claim
188 words
A MOS FET device comprising a semiconductor substrate of one conductivity type, a source layer of the other conductivity type formed in the substrate, a drain layer of the other conductivity type formed in the substrate with a gap from the source layer, a drain electrode applied on the drain layer, a channel region being defined in the substrate between said source layer and said drain layer, an insulating film overlying the channel zone, and a gate electrode applied on the insulating film so as to face the channel region via the insulating film, at least one of the source and drain layers having a tapered portion whose diminished edge extends into the channel zone so as to face the other one of the source and drain layers, wherein the diminished edge of said at least one of the source and drain layers is separated from the other one of the source and drain layers by such a gap L that a carrier moving speed in the channel zone is saturated when a sourcedrain voltage higher than a threshold value is applied across the source and drain electrodes.
Claim 3
Dependent Claim
18 words
A MOS FET device as set forth in claim 1, wherein said tapered portion is of wedge shape.
Claim 4
Dependent Claim
18 words
A MOS FET device as set forth in claim 1, wherein said tapered portion is of semicircular shape.
Claim 5
Dependent Claim
18 words
A MOS FET device as set forth in claim 1, wherein said tapered portion is of semi-elliptic shape.
Claim 6
Dependent Claim
40 words
A MOS FET device as set forth in claim 1, wherein said other one of the source and drain layers has a rectangular portion which faces said diminished edge of said one of the source zone and the drain layers.
Claim 7
Dependent Claim
218 words
A MOS FET device comprising a semiconductor substrate of one conductivity type, a source layer of the other conductivity type formed in the substrate, a drain layer of the other conductivity type formed in the substrate with a gap from the source layer, a drain electrode applied on the drain layer, a channel region being defined in the substrate between said source layer and said drain layer, an insulating film overlying the channel zone, and a gate electrode applied on the insulating film so as to face the channel region via the insulating film, each of the source and drain layers having a tapered portion whose diminished edge extends into the channel zone so as to face the other one of the source and drain layers, the diminished edges of said source and drain layers being aligned so as to face each other, each of the vertical aligned of the tapered portions of said source and drain layers being in a range of 10° to 160° ; and the diminished edge of the source layer and the diminished edge of the drain layer being separated by such a gap L that a carrier moving speed in the channel zone is saturated when a source-drain voltage higher than a threshold value is applied across the source and drain electrodes.
Claim 8
Dependent Claim
218 words
A MOS FET device comprising a semiconductor substrate of one conductivity type, a source layer of the other conductivity type formed in the substrate, a drain layer of the other conductivity type formed in the substrate with a gap from the source layer, a drain electrode applied on the drain layer, a channel region being defined in the substrate between said source layer and said drain layer, an insulating film overlying the channel zone, and a gate electrode applied on the insulating film so as to face the channel region via the insulating film, each of the source and drain layers having a tapered portion whose diminished edge extends into the channel zone so as to face the other one of the source and drain layers, the diminished edges of said source and drain layers being aligned so as to face each other, each of the vertical aligned of the tapered portions of said source and drain layers being in a range of 10° to 160° ; and the diminished edge of the source layer and the diminished edge of the drain layer being separated by such a gap L that a carrier moving speed in the channel zone is saturated when a source-drain voltage higher than a threshold value is applied across the source and drain electrodes.
Claim 9
Dependent Claim
39 words
A MOS FET device as set forth in claim 1, wherein both of the source and the drain layers have said tapered portions with the diminished edges respectively, which diminished edges are aligned so as to face each other.
Claim 10
Dependent Claim
28 words
A MOS FET device as set forth in claim 7, wherein the diminished edges of both the source and drain layers are of wedge shape with identical vertical
Claim 11
Dependent Claim
30 words
A MOS FET device as set forth in claim 7, wherein the diminished edges of both the source and drain layers are of wedge shape but with different vertical angles.
Claim 12
Dependent Claim
24 words
A MOS FET device as set forth in claim 8, wherein each of the vertical angles is in a range of 10° to 160°.
Claim 13
Dependent Claim
24 words
A MOS FET device as set forth in claim 9, wherein each of the vertical angles is in a range of 10° to 160°.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-08 | 1993-07-10 | 1994-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-08 | 1997-07-10 | 1998-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-08 | 2001-07-10 | 2002-01-09 | $7700.00 | Window Closed / Lapsed |