US4893154A
Expired / Lapsed
US
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Electroluminescent device
Assignee: Canon Inc
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Filing: 1989-02-08
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Granted: 1990-01-09
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Expires: 2009-02-08
Abstract
Abstract An electroluminescent device, which emits light by recombination of the carriers injected or excited by light of energy of electrical field, comprising an active layer which includes a semiconductor layer of a super-lattice structure. The layer in the super-lattice structure is changed in effective band gap by an electrical field externally applied to vary the emitted light wavelength. The semiconductor layer of said super-lattice structure comprising an non-single crystalline semiconductor material.
Inventors
- 👤 Yutaka Hirai
- 👤 Masafumi Sano
- 👤 Hisanori Tsuda
- 👤 Katsuji Takasu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:31
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H10H20/052
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
72 words
An electroluminescent device, which emits light by recombination of the carriers injected or excited by light or energy of electrical field said electroluminescent device comprising: an active layer at least a part of which is a non-monocrystalline semiconductor layer of a super-lattice structure having an effective band gap; and electrodes for applying variable voltage to said non-monocrystalline semiconductor layer of said super-lattice to change the effective band gap of the semiconductor layer.
Claim 2
Dependent Claim
72 words
An electroluminescent device, which emits light by recombination of the carriers injected or excited by light or energy of electrical field said electroluminescent device comprising: an active layer at least a part of which is a non-monocrystalline semiconductor layer of a super-lattice structure having an effective band gap; and electrodes for applying variable voltage to said non-monocrystalline semiconductor layer of said super-lattice to change the effective band gap of the semiconductor layer.
Claim 3
Dependent Claim
37 words
An electroluminescent device according to claim 1, wherein said super-lattice structure is formed by alternately laminating thin films comprising at least two non-monocrystalline semiconductor materials selected from the group consisting of Si:H, Ge:H, Si-C:H, Si-Ge:H, and Si-N:H.
Claim 4
Dependent Claim
13 words
An electroluminescent device according to claim 1, wherein said non-monocrystalline material comprises silicon.
Claim 5
Dependent Claim
23 words
An electroluminescent device according to claim 2, wherein each of said thin films has a respective thickness in a range of 2-100 Å.
Claim 6
Dependent Claim
14 words
An electroluminescent device according to claim 3, wherein said non-monocrystalline semiconductor material comprises fluorine.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-08 | 1993-07-10 | 1994-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-08 | 1997-07-10 | 1998-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-08 | 2001-07-10 | 2002-01-09 | $7700.00 | Window Closed / Lapsed |