Patent US4892615A successfully refreshed from Google Patents.
US4892615A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films
Assignee: STMicroelectronics SRL
•
Filing: 1987-12-02
•
Granted: 1990-01-09
•
Expires: 2007-12-02
Abstract
Abstract A decontamination system for processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology. After introducing the products concerned with a process into a chamber and after creating a vacuum in the chamber, the chamber is decontaminated by a series of intermittent inflows of non-contaminating gas and subsequent pressure varying operations.
Inventors
- 👤 Antonino Motta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:09
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4408; C23C16/4412; C30; C30B; C30B23/00; C30B23/02; C30B25/00; C30B25/02; C30B25/08
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
118 words
A method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films which comprises: introducing into a chamber products to be processed as high purity films, creating a vacuum in said chamber containing said products by pumping so that the pressure in said chamber is reduced to a first minimum pressure value of at least about 25 mTorr, purging said chamber by introducing therein a non-contaminating gas until a second pressure is reached higher than said first minimum value pressure, and repeating the above purging and pumping steps, such that the flow of said non-contaminating gas is intermittent and decontamination is realized by said series of purgings and pumping steps.
Claim 2
Independent Claim
118 words
A method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films which comprises: introducing into a chamber products to be processed as high purity films, creating a vacuum in said chamber containing said products by pumping so that the pressure in said chamber is reduced to a first minimum pressure value of at least about 25 mTorr, purging said chamber by introducing therein a non-contaminating gas until a second pressure is reached higher than said first minimum value pressure, and repeating the above purging and pumping steps, such that the flow of said non-contaminating gas is intermittent and decontamination is realized by said series of purgings and pumping steps.
Claim 3
Dependent Claim
34 words
The method of claim 1, wherein each purging and each pumping operation in the above series is started as soon as pressure inside the chamber has reached a predetermined minimum and respectively maximum value.
Claim 4
Independent Claim
120 words
A system for vacuum processes of deposition, etching and/or growth of high purity films to be applied particularly to semiconductor technology which includes means for introduction into a chamber products to be processed as high purity films, pumping means for creating a vacuum in said chamber to a first minimum pressure value of at least about 25 mTorr and purging means capable of subsequently decontaminating said chamber by introduction of a flow of non-contaminating gas until a value of a second pressure is reached higher than said first minimum value wherein said purging and pumping means cause the flow of said non-contaminating gas to be intermittent, decontamination being realized by a series of purgings each one followed by a pumping.
Claim 5
Independent Claim
120 words
A system for vacuum processes of deposition, etching and/or growth of high purity films to be applied particularly to semiconductor technology which includes means for introduction into a chamber products to be processed as high purity films, pumping means for creating a vacuum in said chamber to a first minimum pressure value of at least about 25 mTorr and purging means capable of subsequently decontaminating said chamber by introduction of a flow of non-contaminating gas until a value of a second pressure is reached higher than said first minimum value wherein said purging and pumping means cause the flow of said non-contaminating gas to be intermittent, decontamination being realized by a series of purgings each one followed by a pumping.
Claim 6
Dependent Claim
46 words
The system of claim 3, wherein said purging and pumping means regulate said series of purgings and subsequent pumpings in such a way that each purging and pumping operation begins as soon as pressure inside said chamber has reached a predetermined minimum and respectively maximum value.
Claim 7
Independent Claim
121 words
A system for vacuum processes of deposition, etching and/or growth of high purity films to be applied particularly to semiconductor technology which includes means for introduction into a chamber products to be processed as high purity films, a pump for creating a vacuum in said chamber to a first minimum pressure value of at least about 25 mTorr and a valve system capable of subsequently decontaminating said chamber by introduction of a flow of non-contaminating gas until a value of a second pressure is reached higher than said first minimum value wherein said pump and valve system cause the flow of said non-contaminating gas to be intermittent, decontamination being realized by a series of purgings each one followed by a pumping.
Claim 8
Independent Claim
121 words
A system for vacuum processes of deposition, etching and/or growth of high purity films to be applied particularly to semiconductor technology which includes means for introduction into a chamber products to be processed as high purity films, a pump for creating a vacuum in said chamber to a first minimum pressure value of at least about 25 mTorr and a valve system capable of subsequently decontaminating said chamber by introduction of a flow of non-contaminating gas until a value of a second pressure is reached higher than said first minimum value wherein said pump and valve system cause the flow of said non-contaminating gas to be intermittent, decontamination being realized by a series of purgings each one followed by a pumping.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-08 | 1993-07-10 | 1994-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-08 | 1997-07-10 | 1998-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-08 | 2001-07-10 | 2002-01-09 | $7700.00 | Window Closed / Lapsed |