Patent US4892592A successfully refreshed from Google Patents.
US4892592A
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Thin film semiconductor solar cell array and method of making
Assignee: BP Solar International LLC
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Filing: 1988-11-08
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Granted: 1990-01-09
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Expires: 2008-11-08
Abstract
Abstract A method of forming laser-patterned conductive elements on a thin film of semiconductor material in a semiconductor device by fabricating a thin film of metal on the semiconductor material and scribing the semiconductor film along a desired pattern with a laser operated at a power density sufficient to ablate the semiconductor material along the desired pattern. The ablation of the semiconductor material produces gases that structurally weaken and burst through the metal film along the desired pattern to form gaps separating the metal film into a plurality of conductive elements, for example, back electrodes on a thin-film photovoltaic module. In a second embodiment, a method of forming a multi-cell thin-film semiconductor device with laser-patterned back electrodes includes the steps of fabricating a plurality of spaced-apart front electrodes on a substrate, fabricating a thin film of semiconductor material on the front electrodes, fabricating a thin film of metal on the semiconductor film, and scribing the metal film along a pattern of lines with a laser operated at a power density sufficient to melt the metal through the underlying semiconductor film and form electrical connections between the metal film and the front electrodes along the scribe lines. Multi-cell, thin-film amorphous silicon photovoltaic modules having back electrodes formed by the above methods also are disclosed.
Inventors
- 👤 Charles R. Dickson
- 👤 Barry J. Johnson
- 👤 David B. Gerhardt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:15
CPC Classifications
B; B23; B23K; B23K26/00; B23K26/36; B23K26/362; B23K26/364; B23K26/40; H; H10; H10F; H10F19/00; H10F19/30; H10F19/31; H10F19/33; B23K2103/00; B23K2103/16; B23K2103/166; B23K2103/172; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
178 words
A method of forming a multi-cell thin-film semiconductor device with laser-patterned back electrodes, comprising the steps of: a. fabricating a plurality of spaced-apart front electrodes on a substrate; b. fabricating a thin film of semiconductor material on said front electrodes; c. fabricating a thin film of metal on said semiconductor film; d. scribing said metal film along a pattern of first lines with a laser operated at a first power density sufficient to melt said metal through said underlying semiconductor film and form electrical connections between said metal film and said front electrodes along said first lines; and e. scribing said semiconductor film along a pattern of second lines with a laser operated at a second power density sufficient to ablate said semiconductor material along said second lines, said second lines being substantially parallel to and adjacent said first lines, the ablation of said semiconductor material producing gases that structurally weaken and burst through said metal film overlying said semiconductor material along said second lines to form gaps separating said metal film into a plurality of back electrodes.
Claim 2
Independent Claim
178 words
A method of forming a multi-cell thin-film semiconductor device with laser-patterned back electrodes, comprising the steps of: a. fabricating a plurality of spaced-apart front electrodes on a substrate; b. fabricating a thin film of semiconductor material on said front electrodes; c. fabricating a thin film of metal on said semiconductor film; d. scribing said metal film along a pattern of first lines with a laser operated at a first power density sufficient to melt said metal through said underlying semiconductor film and form electrical connections between said metal film and said front electrodes along said first lines; and e. scribing said semiconductor film along a pattern of second lines with a laser operated at a second power density sufficient to ablate said semiconductor material along said second lines, said second lines being substantially parallel to and adjacent said first lines, the ablation of said semiconductor material producing gases that structurally weaken and burst through said metal film overlying said semiconductor material along said second lines to form gaps separating said metal film into a plurality of back electrodes.
Claim 3
Dependent Claim
23 words
The method of claim 1, further comprising the step of applying ultrasonic vibration to said semiconductor device after said second line scribing step.
Claim 4
Dependent Claim
17 words
The method of claim 1, wherein said first and second line scribing steps are performed substantially simultaneously.
Claim 5
Dependent Claim
49 words
The method of claim 1, wherein: said semiconductor film comprises amorphous silicon and is about 6000 Å thick; said metal film comprises aluminum and is about 7000 Å thick; and said scribing steps are performed with a frequency-doubled neodymium:YAG laser emitting light having a wavelength of about 0.53 micrometers.
Claim 6
Dependent Claim
27 words
The method of claim 4, wherein said laser is focused to about 25 micrometers and is operated at about 400 mW during said first line scribing step.
Claim 7
Dependent Claim
38 words
The method of claim 5, wherein said laser is operated at a pulse rate of about 5 kHz and moves relative to said substrate at a feed rate of about 10-18 cm/sec during said first line scribing step.
Claim 8
Dependent Claim
38 words
The method of claim 5, wherein said laser is operated at a pulse rate of about 5 kHz and moves relative to said substrate at a feed rate of about 16.5 cm/sec during said first line scribing step.
Claim 9
Dependent Claim
27 words
The method of claim 4, wherein said laser is focused to about 100 micrometers and is operated at about 320-370 mW during said second line scribing step.
Claim 10
Dependent Claim
38 words
The method of claim 8, wherein said laser is operated at a pulse rate of about 5 kHz and moves relative to said substrate at a feed rate of about 13 cm/sec during said second line scribing step.
Claim 11
Dependent Claim
174 words
A multi-cell thin-film semiconductor device fabricated by a process comprising the steps of: a. fabricating a plurality of spaced-apart front electrodes on a substrate; b. fabricating a thin film of semiconductor material on said front electrodes; c. fabricating a thin film of metal on said semiconductor film; d. scribing said metal film along a pattern of first lines with a laser operated at a first power density sufficient to melt said metal through said underlying semiconductor film and form electrical connections between said metal film and said front electrodes along said first lines; and e. scribing said semiconductor film along a pattern of second lines with a laser operated at a second power density sufficient to ablate said semiconductor material along said second lines, said second lines being substantially parallel to and adjacent said first lines, the ablation of said semiconductor material producing gases that structurally weaken and burst through said metal film overlying said semiconductor material along said second lines to form gaps separating said metal film into a plurality of back electrodes.
Claim 12
Dependent Claim
174 words
A multi-cell thin-film semiconductor device fabricated by a process comprising the steps of: a. fabricating a plurality of spaced-apart front electrodes on a substrate; b. fabricating a thin film of semiconductor material on said front electrodes; c. fabricating a thin film of metal on said semiconductor film; d. scribing said metal film along a pattern of first lines with a laser operated at a first power density sufficient to melt said metal through said underlying semiconductor film and form electrical connections between said metal film and said front electrodes along said first lines; and e. scribing said semiconductor film along a pattern of second lines with a laser operated at a second power density sufficient to ablate said semiconductor material along said second lines, said second lines being substantially parallel to and adjacent said first lines, the ablation of said semiconductor material producing gases that structurally weaken and burst through said metal film overlying said semiconductor material along said second lines to form gaps separating said metal film into a plurality of back electrodes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-08 | 1993-07-10 | 1994-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-08 | 1997-07-10 | 1998-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-08 | 2001-07-10 | 2002-01-09 | $7700.00 | Window Closed / Lapsed |