Patent US4890370A successfully refreshed from Google Patents.
US4890370A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method for integrated resonator
Assignee: Murata Manufacturing Co Ltd
•
Filing: 1988-10-07
•
Granted: 1990-01-02
•
Expires: 2008-10-07
Abstract
Abstract A manufacturing method for an integrated resonator is disclosed wherein a mass of O + ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO 2 layer is formed by annealing the ion implanted substrate, an SiO 2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO 2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO 2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO 2 layer corresponding to the cavity in the substrate.
Inventors
- 👤 Susumu Fukuda
- 👤 Hisashi Ariyoshi
- 👤 Toru Kasanami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:54
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/15; H03H9/17; H03H9/171; H03H9/172; H03H9/173; H03H3/00; H03H3/007; H03H3/02; H03H2003/021; Y; Y10; Y10T; Y10T29/00; Y10T29/42
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
121 words
A manufacturing method for an integrated resonator comprising the following steps: (a) implanting O + ions into a silicon monocrystal substrate from one side thereof, (b) annealing the ion implanted substrate to form a buried SiO 2 layer therein, (c) oxidizing the surface of the substrate to form an SiO 2 layer thereon, (d) forming at least one slit on the SiO 2 layer formed by step (c), (e) etching an area of the silicon monocrystal layer defined between the SiO 2 layer and the buried SiO 2 layer through the at least one slit to form a cavity therein, and (f) forming a piezo-electric resonator on an area of the SiO 2 layer corresponding to the cavity formed by etching.
Claim 2
Dependent Claim
121 words
A manufacturing method for an integrated resonator comprising the following steps: (a) implanting O + ions into a silicon monocrystal substrate from one side thereof, (b) annealing the ion implanted substrate to form a buried SiO 2 layer therein, (c) oxidizing the surface of the substrate to form an SiO 2 layer thereon, (d) forming at least one slit on the SiO 2 layer formed by step (c), (e) etching an area of the silicon monocrystal layer defined between the SiO 2 layer and the buried SiO 2 layer through the at least one slit to form a cavity therein, and (f) forming a piezo-electric resonator on an area of the SiO 2 layer corresponding to the cavity formed by etching.
References Cited (Backward Citations)
US3912563A
Cited
US4556812A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-01 | 1993-07-03 | 1994-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-01 | 1997-07-03 | 1998-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-01 | 2001-07-03 | 2002-01-02 | $7700.00 | Window Closed / Lapsed |